MCH6320 Ordering number : ENA0815 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6320 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS ±10 V ID --3.5 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD V PW≤10µs, duty cycle≤1% --14 A Mounted on a ceramic board (1200mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0V VDS=--12V, VGS=0V Ratings min typ Unit max --12 V --10 µA ±10 µA --1.4 V Forward Transfer Admittance VGS(off) yfs VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--0.8A, VGS=--2.5V 80 115 mΩ RDS(on)3 ID=--0.3A, VGS=--1.8V 125 215 mΩ Cutoff Voltage Marking : JU --0.4 2.7 4.5 54 S 70 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91907PE TI IM TC-00000907 No. A0815-1/4 MCH6320 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=--6V, f=1MHz 405 pF Output Capacitance Coss VDS=--6V, f=1MHz 145 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 100 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.8 ns Rise Time tr td(off) See specified Test Circuit. 80 ns See specified Test Circuit. 41 ns tf Qg See specified Test Circuit. 50 ns VDS=--6V, VGS=--4.5V, ID=--3.5A 5.6 nC Gate-to-Source Charge Qgs nC Qgd VDS=--6V, VGS=--4.5V, ID=--3.5A VDS=--6V, VGS=--4.5V, ID=--3.5A 0.7 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--3.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 1.6 nC --0.86 Package Dimensions --1.2 V Switching Time Test Circuit unit : mm (typ) 7022A-009 VDD= --6V 0.25 VIN 2.0 6 5 0.15 0V --4.5V 4 ID= --1.5A RL=4Ω VIN 2.1 1.6 0 to 0.02 D VOUT 0.25 PW=10µs D.C.≤1% 1 2 3 0.65 G 0.3 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 ID -- VDS .8V VDS= --6V --1 Drain Current, ID -- A --2 .5V V GS= --1 --2 --1 25°C --1 --3 --25°C --3.0 V V --2.5 V S ID -- VGS --4 --4.5 --5.0V --6.0V Drain Current, ID -- A --3 50Ω Ta=75 °C 0.07 0.85 MCH6320 P.G 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT12598 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT12599 No. A0815-2/4 MCH6320 RDS(on) -- VGS 300 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 --0.8A 200 --1.5A 150 ID= --0.3A 100 50 0 0 --2 --4 --6 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S C 5° --2 = °C Ta 75 °C 25 1.0 7 5 --20 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 40 60 80 100 120 140 160 IT12601 --1.0 7 5 3 2 --0.1 7 5 3 2 0 7 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT12603 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 3 20 IS -- VSD IT12602 SW Time -- ID 7 5 0 VGS=0V --0.01 7 5 3 2 3 0.1 --0.01 f=1MHz 7 2 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --10 7 5 3 2 5 3 --40 Ambient Temperature, Ta -- °C VDS= --6V 7 50 IT12600 yfs -- ID 10 A = --0.8 V, I D .5 2 -V GS= = --1.5A 4.5V, I D V GS= -- 100 0 --60 --8 Gate-to-Source Voltage, VGS -- V 3A --0. , I D= --1.8V = VGS 150 Ta= 75° C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 100 7 5 td(off) tf 3 2 tr 10 td(on) Ciss 3 2 Coss Crss 100 7 5 7 3 2 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 3 2 --10 7 5 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 3 2 2 3 4 Total Gate Charge, Qg -- nC 5 6 IT12866 --10 --12 IT12605 ASO PW≤10µs 10 0 1m µs 10 s ms 10 0m s ID= --3.5A DC op era tio n( Ta = 3 2 --0.5 1 --8 IDP= --14A --1.0 7 5 --0.1 7 5 0 --6 3 2 --1.0 0 --4 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --3.5A --4.0 --2 IT12604 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V 5 7 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12867 No. A0815-3/4 MCH6320 PD -- Ta 1.5 1.4 nt ou M 1.2 ed on ac 1.0 er ic am 0.8 ar bo d m 0m 20 (1 0.6 2✕ 0.4 ) m 8m 0. Allowable Power Dissipation, PD -- W 1.6 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12868 Note on usage : Since the MCH6320 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice. PS No. A0815-4/4