SANYO MCH6320

MCH6320
Ordering number : ENA0815
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
MCH6320
General-Purpose Switching Device
Applications
Features
•
•
Ultrahigh-speed switching.
1.8V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--12
Gate-to-Source Voltage
VGSS
±10
V
ID
--3.5
A
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
V
PW≤10µs, duty cycle≤1%
--14
A
Mounted on a ceramic board (1200mm2✕0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
Ratings
min
typ
Unit
max
--12
V
--10
µA
±10
µA
--1.4
V
Forward Transfer Admittance
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1.5A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--1.5A, VGS=--4.5V
ID=--0.8A, VGS=--2.5V
80
115
mΩ
RDS(on)3
ID=--0.3A, VGS=--1.8V
125
215
mΩ
Cutoff Voltage
Marking : JU
--0.4
2.7
4.5
54
S
70
mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91907PE TI IM TC-00000907 No. A0815-1/4
MCH6320
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
VDS=--6V, f=1MHz
405
pF
Output Capacitance
Coss
VDS=--6V, f=1MHz
145
pF
Reverse Transfer Capacitance
Crss
VDS=--6V, f=1MHz
100
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8.8
ns
Rise Time
tr
td(off)
See specified Test Circuit.
80
ns
See specified Test Circuit.
41
ns
tf
Qg
See specified Test Circuit.
50
ns
VDS=--6V, VGS=--4.5V, ID=--3.5A
5.6
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=--6V, VGS=--4.5V, ID=--3.5A
VDS=--6V, VGS=--4.5V, ID=--3.5A
0.7
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=--3.5A, VGS=0V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
1.6
nC
--0.86
Package Dimensions
--1.2
V
Switching Time Test Circuit
unit : mm (typ)
7022A-009
VDD= --6V
0.25
VIN
2.0
6
5
0.15
0V
--4.5V
4
ID= --1.5A
RL=4Ω
VIN
2.1
1.6
0 to 0.02
D
VOUT
0.25
PW=10µs
D.C.≤1%
1
2
3
0.65
G
0.3
1
2
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
6
5
4
SANYO : MCPH6
ID -- VDS
.8V
VDS= --6V
--1
Drain Current, ID -- A
--2
.5V
V GS= --1
--2
--1
25°C
--1
--3
--25°C
--3.0
V
V --2.5
V
S
ID -- VGS
--4
--4.5
--5.0V
--6.0V
Drain Current, ID -- A
--3
50Ω
Ta=75
°C
0.07
0.85
MCH6320
P.G
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT12598
0
--0.5
--1.0
--1.5
--2.0
Gate-to-Source Voltage, VGS -- V
--2.5
IT12599
No. A0815-2/4
MCH6320
RDS(on) -- VGS
300
RDS(on) -- Ta
200
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
--0.8A
200
--1.5A
150
ID= --0.3A
100
50
0
0
--2
--4
--6
2
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
C
5°
--2
=
°C
Ta
75
°C
25
1.0
7
5
--20
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Drain Current, ID -- A
5
40
60
80
100
120
140
160
IT12601
--1.0
7
5
3
2
--0.1
7
5
3
2
0
7
--0.2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
--1.2
IT12603
Ciss, Coss, Crss -- VDS
1000
VDD= --6V
VGS= --4.5V
3
20
IS -- VSD
IT12602
SW Time -- ID
7
5
0
VGS=0V
--0.01
7
5
3
2
3
0.1
--0.01
f=1MHz
7
2
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--10
7
5
3
2
5
3
--40
Ambient Temperature, Ta -- °C
VDS= --6V
7
50
IT12600
yfs -- ID
10
A
= --0.8
V, I D
.5
2
-V GS=
= --1.5A
4.5V, I D
V GS= --
100
0
--60
--8
Gate-to-Source Voltage, VGS -- V
3A
--0.
, I D=
--1.8V
=
VGS
150
Ta=
75°
C
25°C
--25°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
100
7
5
td(off)
tf
3
2
tr
10
td(on)
Ciss
3
2
Coss
Crss
100
7
5
7
3
2
--0.01
5
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
0
3
2
--10
7
5
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
3
2
2
3
4
Total Gate Charge, Qg -- nC
5
6
IT12866
--10
--12
IT12605
ASO
PW≤10µs
10
0
1m µs
10 s
ms
10
0m
s
ID= --3.5A
DC
op
era
tio
n(
Ta
=
3
2
--0.5
1
--8
IDP= --14A
--1.0
7
5
--0.1
7
5
0
--6
3
2
--1.0
0
--4
Drain-to-Source Voltage, VDS -- V
VDS= --6V
ID= --3.5A
--4.0
--2
IT12604
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
5 7
25
°C
)
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm)
--0.01
--0.01
2
3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
IT12867
No. A0815-3/4
MCH6320
PD -- Ta
1.5
1.4
nt
ou
M
1.2
ed
on
ac
1.0
er
ic
am
0.8
ar
bo
d
m
0m
20
(1
0.6
2✕
0.4
)
m
8m
0.
Allowable Power Dissipation, PD -- W
1.6
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12868
Note on usage : Since the MCH6320 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0815-4/4