SMP3003 Ordering number : ENA1655 SANYO Semiconductors DATA SHEET SMP3003 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP PW≤10μs, duty cycle≤1% Tc=25°C Unit --75 V ±20 V --100 A --400 A 90 W 150 °C Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 468 mJ --60 A Avalanche Current *2 Note : *1 VDD=--48V, L=100μH, IAV=--60A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS VDS=--75V, VGS=0V VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA Zero-Gate Voltage Drain Current ID=--1mA, VGS=0V Marking : MP3003 Ratings min typ max --75 --1.2 Unit V --10 μA ±10 μA --2.6 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21710QA TK IM TC-00002253 No. A1655-1/3 SMP3003 Continued from preceding page. Parameter Symbol Forward Transfer Admittance | yfs | RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time Fall Time Total Gate Charge min VDS=--10V, ID=--50A ID=--50A, VGS=--10V RDS(on)1 Static Drain-to-Source On-State Resistance Ratings Conditions typ Unit max 140 ID=--50A, VGS=--4V VDS=--20V, f=1MHz S 6.2 8.0 mΩ 8.0 11 mΩ 13400 pF 1000 pF 740 pF See specified Test Circuit. 95 ns See specified Test Circuit. 1000 ns td(off) See specified Test Circuit. 800 ns tf Qg See specified Test Circuit. 820 ns VDS=--48V, VGS=--10V, ID=--100A VDS=--48V, VGS=--10V, ID=--100A 280 nC 50 nC VDS=--48V, VGS=--10V, ID=--100A IS=--100A, VGS=0V 55 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz VDS=--20V, f=1MHz --1.0 --1.5 V Package Dimensions unit : mm (typ) 7001-003 4.5 0.2 10.2 3.0 1 2 1.35 1.4 8.8 9.9 1.5M AX 1.3 3 0.8 0 t o 0.3 1.2 0.4 2.55 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : SMP-FD Switching Time Test Circuit 0V --10V Avalanche Resistance Test Circuit VDD= --48V VIN L ID= --50A RL=0.96Ω VIN D PW=10μs D.C.≤1% VOUT SMP3003 0V --10V G P.G ≥50Ω RG 50Ω VDD SMP3003 50Ω S No. A1655-2/3 SMP3003 SW Time -- ID 3 VDD= --48V VGS= --10V td (off) 1000 7 Drain Current, ID -- A Switching Time, SW Time -- ns 2 tf 5 3 2 tr 100 --1000 7 5 3 2 td(on) 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 60 50 40 30 20 10 40 60 80 100 ID= --100A --10 7 5 3 2 120 Case Temperature, Tc -- °C 140 160 IT15361 0μ s 1m 10 s m DC 100m s op s era tio n 10 μs Operation in this area is limited by RDS(on). --1.0 7 5 3 2 Tc=25°C 2 3 5 7 --10 2 3 5 7--100 2 IT15360 Drain-to-Source Voltage, VDS -- V Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 20 10 EAS -- Ta 120 80 0 PW≤10μs --0.1 Single pulse 5 7 --1.0 --0.1 2 3 5 7 --100 90 0 IDP= --400A IT15359 PD -- Tc 100 3 --100 7 5 3 2 ASO 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT14184 Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1655-3/3