SANYO 6HP04CH

6HP04CH
Ordering number : ENA1039
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
6HP04CH
General-Purpose Switching Device
Applications
Features
•
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
--60
±20
V
ID
--120
mA
--480
mA
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
Channel Temperature
Storage Temperature
V
0.6
W
Tch
150
°C
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
Conditions
ID=--1mA, VGS=0V
Ratings
min
typ
Unit
max
--60
V
VDS=--60V, VGS=0V
--1
μA
±10
μA
IGSS
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--100μA
--1.2
⏐yfs⏐
RDS(on)1
VDS=--10V, ID=--60mA
100
ID=--60mA, VGS=--10V
5.1
6.6
RDS(on)2
Ciss
ID=--30mA, VGS=--4V
6.8
9.6
VDS=--20V, f=1MHz
13.5
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
3.4
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
1.3
pF
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Marking : YZ
--2.6
180
V
mS
Ω
Ω
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608PE TI IM TC-00001164 No. A1039-1/4
6HP04CH
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Ratings
Conditions
min
typ
td(on)
tr
See specified Test Circuit.
36.5
ns
See specified Test Circuit.
38
ns
td(off)
tf
See specified Test Circuit.
455
ns
See specified Test Circuit.
160
ns
1.6
nC
0.4
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=--30V, VGS=--10V, ID=--120mA
VDS=--30V, VGS=--10V, ID=--120mA
VDS=--30V, VGS=--10V, ID=--120mA
Diode Forward Voltage
VSD
IS=--120mA, VGS=0V
Package Dimensions
0.16
--1.2
V
Switching Time Test Circuit
VDD= --30V
VIN
0V
--10V
0.6
2.9
0.15
ID= --60mA
RL=500Ω
VOUT
VIN
3
0.2
D
PW=10μs
D.C.≤1%
0.05
1.6
2.8
nC
--0.85
unit : mm (typ)
7015A-004
Rg
G
1
0.6
Unit
max
2
0.95
1 : Gate
2 : Source
3 : Drain
6HP04CH
P.G
50Ω
S
0.9
0.2
0.4
SANYO : CPH3
Rg=5kΩ
ID -- VDS
V
0V
.
--3
--4
.0
.0V
--8
.
--40
--20
--60
--40
Ta=
7
--20
25°C --25°C
V
--2.5
V GS=
--60
--80
5°C
--5
Drain Current, ID -- mA
.0V
.0V -10
--80
VDS= --10V
--100
--1
5
Drain Current, ID -- mA
--100
ID -- VGS
--120
0V
--120
0
0
0
--0.2
--0.4
--0.6
--0.8
Drain-to-Source Voltage, VDS -- V
--1.0
0
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
14
--0.5
IT10865
--3.5
IT10866
RDS(on) -- Ta
14
12
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=25°C
--60mA
10
8
6
ID= --30mA
4
2
0
0
--2
--4
--6
--8
--10
--12
--14
--16
Gate-to-Source Voltage, VGS -- V
--18
--20
IT10867
12
10
mA
--30
=
, ID
mA
--4V
--60
=
=
I
V GS
V, D
--10
=
V GS
8
6
4
2
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT10868
No. A1039-2/4
6HP04CH
⏐yfs⏐ -- ID
C
5°
100
=
Ta
7
--2
°C
25
C
5°
7
5
3
2
10
--1.0
2
3
5
7 --10
2
3
5
7 --100
2
Drain Current, ID -- mA
5
--1.0
--1.2
--1.4
IT10870
f=1MHz
Ciss, Coss, Crss -- pF
Ciss
100
7
tr
10
7
5
Coss
3
2
Crss
td(on)
3
1.0
7
2
3
5
7
2
--0.1
3
Drain Current, ID -- A
5
7
0
--10
--15
--20
--1.0
7
5
Drain Current, ID -- A
2
--6
--5
--4
IDP= --480mA
PW≤10μs
1
1m 00μs
10 s
m
s
10
0m
s
ID= --120mA
--0.1
7
5
DC
era
tio
n(
2
--2
3
2
--1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT10873
PD -- Ta
0.7
op
3
Operation in this area
is limited by RDS(on).
--0.01
7
5
--3
--30
IT10872
ASO
3
--8
--7
--25
Drain-to-Source Voltage, VDS -- V
VDS= --30V
ID= --120mA
--9
--5
IT10871
VGS -- Qg
--10
Gate-to-Source Voltage, VGS -- V
--0.8
2
tf
2
--0.01
Allowable Power Dissipation, PD -- W
--0.6
Ciss, Coss, Crss -- VDS
3
3
5
--0.4
Diode Forward Voltage, VSD -- V
VDD= --30V
VGS= --10V
td(off)
2
--1.0
7
5
3
2
IT10869
7
5
--10
7
5
3
2
--0.1
--0.2
7
SW Time -- ID
1000
Switching Time, SW Time -- ns
3
--100
7
5
3
2
25°C
--25°C
2
°C
3
VGS=0V
Ta=7
5
5
IS -- VSD
--1000
7
5
3
2
VDS= --10V
Source Current, IS -- mA
Forward Transfer Admittance, ⏐yfs⏐ -- mS
7
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
--0.001
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT13268
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13269
No. A1039-3/4
6HP04CH
Note on usage : Since the 6HP04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1039-4/4