CPH6355 Ordering number : EN8933 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6355 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=130mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Unit --30 V ±20 V --3 A --12 A 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 5 Packing Type: TL 4 Marking 0.9 1 2 0.95 LOT No. XF 0.05 1.6 0.2 0.6 2.8 0.2 0.6 2.9 6 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network 81011PE TKIM TC-00002635 No.8933-1/4 CPH6355 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--30V, VGS=0V typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--1.5A 2.3 RDS(on)1 ID=--1.5A, VGS=--10V 130 169 mΩ RDS(on)2 ID=--0.5A, VGS=--4.5V 197 276 mΩ RDS(on)3 ID=--0.5A, VGS=--4V 223 313 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --1 μA ±10 μA --2.6 V S 172 pF 51 pF Crss 36 pF Turn-ON Delay Time td(on) 4.6 ns Rise Time tr 6.6 ns Turn-OFF Delay Time 19.4 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--3A IS=--3A, VGS=0V 11.4 ns 3.9 nC 0.6 nC 0.8 nC --0.95 --1.5 V Switching Time Test Circuit 0V --10V VIN VDD= --15V ID= --1.5A RL=15Ω VIN D PW=10μs D.C.≤1% VOUT G CPH6355 50Ω V 0V .5 --4 --1.5 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT16553 0 25° --0.5 --0.5 --25° C --1.0 C VGS= --3.0V --2.0 5°C --1.0 Drain Current, ID -- A --2.5 --1.5 0 VDS= --10V . --4 --10 --2.0 ID -- VGS --3.0 .0V --2.5 --6 . --8. 0 V Ta=25°C 0V ID -- VDS --3.0 Drain Current, ID -- A S Ta= 7 P.G 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 --4.5 IT16554 No.8933-2/4 CPH6355 RDS(on) -- VGS --1.5A 350 300 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V 200 150 100 50 0 --60 --40 --18 3 2 C 5° --2 = °C Ta 75 7 5 °C 25 0 20 40 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT16557 5 --0.001 td(off) 2 tf 10 7 tr td(on) 5 7 --1.0 2 3 5 Drain Current, ID -- A --9 --5 --4 --3 --2 --1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC 4.0 4.5 IT16561 --1.2 IT16558 Ciss Coss 5 Crss 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A --6 --1.0 f=1MHz 7 --100 7 5 3 2 --7 --0.8 100 10 --8 --0.6 2 --10 VDS= --15V ID= --3A --0.4 Ciss, Coss, Crss -- VDS IT16559 VGS -- Qg --10 7 --0.2 3 2 5 160 5 3 3 140 IT16556 7 2 2 0 1000 3 1.0 --0.1 120 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 100 VGS=0V --0.1 7 5 3 2 VDD= --15V VGS= --10V 7 80 --1.0 7 5 3 2 SW Time -- ID 100 60 IS -- VSD --10 7 5 3 2 --0.01 7 5 3 2 3 0 --20 Ambient Temperature, Ta -- °C 5 1.0 A --0.5 , I D= V 0 . 4 = -VGS --0.5A , I D= V 5 . 4 = -VGS = --1.5A 10.0V, I D V GS= -- 250 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 Drain Current, ID -- A Switching Time, SW Time -- ns 300 VDS= --10V 0.1 --0.01 Gate-to-Source Voltage, VGS -- V 350 IT16555 | yfs | -- ID 10 400 Ta=7 5°C 25°C 400 450 C ID= --0.5A --25° 450 RDS(on) -- Ta 500 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 --10 7 5 3 2 --20 IT16560 ASO IDP= --12A (PW≤10μs) 10 0μ 10 ms ID= --3A DC --1.0 7 5 3 2 --0.1 7 5 3 2 --18 s 10 op s 1m 0m era s tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16562 No.8933-3/4 CPH6355 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (1500mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16563 Note on usage : Since the CPH6355 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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