MCH6444 Ordering number : EN8935 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6444 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=75mΩ (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 10 A W 150 °C --55 to +150 °C 0.15 Packing Type : TL 4 TL 0.3 Electrical Connection 0.85 0.25 3 0.65 ZT LOT No. 2 LOT No. 0.07 Marking 0 t o 0.02 2.1 1.6 0.25 • Package : MCPH6 • JEITA, JEDEC : SC-88, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 1 A 0.8 Product & Package Information 5 V 2.5 When mounted on ceramic substrate (900mm2×0.8mm) unit : mm (typ) 7022A-009 6 V ±20 PW≤10μs, duty cycle≤1% Package Dimensions 2.0 Unit 35 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 1, 2, 5, 6 3 4 http://semicon.sanyo.com/en/network 62911PE TKIM TC-00002620 No.8935-1/4 MCH6444 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=1.5A, VGS=10V 75 98 mΩ RDS(on)2 ID=0.75A, VGS=4.5V 118 166 mΩ RDS(on)3 ID=0.75A, VGS=4V 143 201 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 186 pF Output Capacitance Coss VDS=20V, f=1MHz 36 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 22 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 4.2 ns See specified Test Circuit. 4.7 ns td(off) tf See specified Test Circuit. 15 ns See specified Test Circuit. 5.7 ns Total Gate Charge Qg nC Qgs VDS=20V, VGS=10V, ID=2.5A VDS=20V, VGS=10V, ID=2.5A 4 Gate-to-Source Charge 0.9 nC VDS=20V, VGS=10V, ID=2.5A IS=2.5A, VGS=0V 0.86 Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 35 V 1.2 1 μA ±10 μA 2.6 VDS=10V, ID=1.5A 1.7 V S 0.7 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=1.5A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G MCH6444 50Ω ID -- VDS 0V 4.5 V 4. 3.5V 1.0 3.0V 3 2 Ta= 7 1 0.5 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16513 0 0 1 2 25°C --25°C Drain Current, ID -- A 1.5 VDS=10V 4 16.0V 2.0 ID -- VGS 5 6.0V 10.0V 2.5 Drain Current, ID -- A S 5°C P.G 3 4 Gate-to-Source Voltage, VGS -- V 5 6 IT16514 No.8935-2/4 MCH6444 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 ID=0.75A 1.5A 200 150 100 50 10 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 2 5°C --2 = C Ta 75° 5 °C 25 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 --40 --20 0 20 40 60 80 100 120 140 160 IT16516 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 5 2 td(off) 10 tr 7 5 tf td(on) 3 0.2 0.4 0.6 0.8 1.0 1.2 IT16518 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 5 Ciss, Coss, Crss -- pF 3 0 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 7 Switching Time, SW Time -- ns 50 0.01 5 7 10 IT16517 Drain Current, ID -- A 2 3 Ciss 2 100 7 5 Coss 3 Crss 2 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 10 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge, Qg -- nC 5 10 3.5 4.0 4.5 IT16521 15 20 25 30 Drain-to-Source Voltage, VDS -- V VDS=20V ID=2.5A 9 0 IT16519 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 100 3 2 2 0 150 10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 7 A 0.75 , I D= V 4 = VGS 5A =0.7 V, I D 5 . 4 = VGS =1.5A 10V, I D = S VG Ambient Temperature, Ta -- °C 5 1.0 200 0 --60 16 VDS=10V 7 250 IT16515 | yfs | -- ID 10 RDS(on) -- Ta 300 Ta=25°C Ta=7 5°C 25°C --25° C 300 10 7 5 3 2 ASO IDP=10A (PW≤10μs) 10 1 0μs 10 ms 10 ms 0m s ID=2.5A DC 1.0 7 5 3 2 0.1 7 5 3 2 35 IT16520 op er ati on Operation in this area is limited by RDS(on). (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7100 IT16511 No.8935-3/4 MCH6444 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16512 Note on usage : Since the MCH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2011. Specifications and information herein are subject to change without notice. PS No.8935-4/4