2SK4177 Ordering number : ENA0869 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Unit 1500 V ±20 V 2 A 4 A 1.65 W Allowable Power Dissipation PD 80 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2 A Tc=25°C *1 VDD=99V, L=20mH, IAV=2A *2 L≤20mH, single pulse Marking : K4177 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31208QB TI IM TC-00001270 No. A0869-1/5 2SK4177 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage VGS(off) ⏐yfs⏐ Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on) Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Ratings Conditions min ID=1mA, VGS=0V VDS=1200V, VGS=0V typ Unit max 1500 V 100 VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=1A ±10 2.5 3.5 0.7 1.4 ID=1A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz μA μA V S 10 13 Ω 380 pF 70 pF VDS=30V, f=1MHz See specified Test Circuit. 40 pF 12 ns See specified Test Circuit. 37 ns See specified Test Circuit. 152 ns See specified Test Circuit. 59 ns Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A Diode Forward Voltage VSD IS=2A, VGS=0V 37.5 nC 2.7 nC 0.88 20 nC 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions Package Dimensions unit : mm (typ) 7513-002 unit : mm (typ) 7001-003 4.5 0.2 11.0 (9.4) 0.4 1 2 1.4 1.35 1.5MAX 3.0 1.6 20.9 1.2 0.8 8.8 1.3 9.9 8.8 1.3 11.5 4.5 10.2 0.2 10.2 3 0.8 0 to 0.3 1.2 2.55 0.4 3 2.7 2 1 : Gate 2 : Drain 3 : Source 2.7 1 2.55 2.55 2.55 2.55 2.55 SANYO : SMP Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Avalanche Resistance Test Circuit VDD=200V VIN L 10V 0V ≥50Ω RG ID=1A RL=200Ω VIN D VOUT PW=10μs D.C.≤0.5% DUT 10V 0V G 50Ω VDD 2SK4177 P.G RGB=50Ω S No. A0869-2/5 2SK4177 ID -- VDS 4.0 VDS=20V pulse 8V 2.5 6V 2.0 1.5 5V 1.0 Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 3.0 Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 50 0 4 6 8 10 12 14 16 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=1A VGS=10V 25°C --25°C 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 2 °C 25 1.0 5°C --2 = °C Tc 75 3 2 0.1 0 25 5 7 2 0.1 3 5 7 Drain Current, ID -- A 2 1.0 150 IT07133 3 2 0.1 7 5 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT07135 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 2 Ciss, Coss, Crss -- pF td(off) 2 100 tf 7 5 3 tr 2 1000 7 5 Ciss 3 2 Co ss 100 7 5 Crss 3 2 td(on) 10 0.1 125 1.0 7 5 IT07134 VDD=200V VGS=10V 3 100 3 2 0.01 0.2 3 SW Time -- ID 5 75 VGS=0V 3 2 3 50 IS -- VSD 10 7 5 3 5 --25 Case Temperature, Tc -- °C VDS=20V 7 5 IT07132 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 20 ⏐yfs⏐ -- ID 5 Switching Time, SW Time -- ns 18 10 0 --50 0 0 15 5°C 25°C 10 20 --25°C Tc=75°C 15 25 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 20 IT07131 RDS(on) -- Tc 30 ID=1A 25 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 30 2 IT07130 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09037 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09038 No. A0869-3/5 2SK4177 VGS -- Qg 10 9 3 Drain Current, ID -- A 6 5 4 3 10 m 0m s s 10 D C op er 3 2 at io n Operation in this area is limited by RDS(on). 0.1 7 5 2 3 2 0 0 10 20 30 Allowable Power Dissipation, PD -- W 1.2 he at 0.8 5 7 10 sin k 0.4 2 3 5 7 100 5 71000 2 3 IT12896 2 3 Drain-to-Source Voltage, VDS -- V PD -- Tc 100 1.65 1.6 No 2 3 IT07138 PD -- Ta 2.0 Tc=25°C Single pulse 0.01 1.0 40 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 1.0 7 5 s 7 PW≤10μs 10 0μ s ID=2A 2 8 1 80 60 40 20 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12897 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12898 EAS -- Ta 120 Avalanche Energy derating factor -- % ASO IDP=4A 1m Gate-to-Source Voltage, VGS -- V 7 5 VDS=200V ID=2A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0869-4/5 2SK4177 Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No. A0869-5/5