SANYO SCH1343

SCH1343
Ordering number : ENA1994
SANYO Semiconductors
DATA SHEET
SCH1343
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance RDS(on)1=55mΩ(typ.)
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--20
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
Package Dimensions
Product & Package Information
unit : mm (typ)
7028-002
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
--3.5
A
--14
A
0.2
6 5 4
0.2
Packing Type : TL
Marking
1.5
3
0.5
TL
0.56
2
0.25
0.05
1
YU
LOT No.
LOT No.
1.6
0.05
1.6
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
Electrical Connection
1, 2, 5, 6
3
4
http://semicon.sanyo.com/en/network
N1611PE TKIM TC-00002663 No. A1994-1/4
SCH1343
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
min
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
--20
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
--0.4
typ
Unit
max
V
--1
μA
±10
μA
--1.3
V
6
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
RDS(on)3
Input Capacitance
Ratings
Conditions
S
55
72
mΩ
78
110
mΩ
115
173
mΩ
1220
pF
82
pF
Crss
72
pF
td(on)
tr
8.8
ns
35
ns
123
ns
VDS=--10V, f=1MHz
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3.5A
61
ns
11
nC
1.9
nC
1.9
IS=--3.5A, VGS=0V
--0.83
nC
--1.2
V
Switching Time Test Circuit
0V
--4.5V
VDD= --10V
VIN
ID= --2A
RL=5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
SCH1343
50Ω
--5.5
--1.0
--1.5V
--0.5
--1.4V
VGS= --1.3V
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--1.0
IT16652
VDS= --10V
--0.5
0
0
--0.5
--1.0
25° --25°
C
C
--1.5
--5.0
5°C
--2.0
0
Ta= --2
5°C
75°C
V --2.5V
--6.0
--1.8V
Drain Current, ID -- A
--2.5
--6.5
--3.0
--8.0V --4.5V
--3.0
ID -- VGS
--7.0
25°C
ID -- VDS
--3.5
Drain Current, ID -- A
S
Ta=
7
P.G
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
--4.0
IT16653
No. A1994-2/4
SCH1343
RDS(on) -- VGS
ID= --0.5A
--1.0A
--2.0A
150
100
50
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
7
C
5°
=
Ta
--2
1.0
25
7
75
°C
°C
3
20
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
VDD= --10V
VGS= --4.5V
tf
3
tr
2
td(on)
10
7
5
120
140
160
IT16655
--1.0
7
5
3
2
--0.1
7
5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IT16657
Ciss, Coss, Crss -- VDS
10000
7
5
Ciss, Coss, Crss -- pF
100
7
5
100
VGS=0V
f=1MHz
3
2
td(off)
80
Diode Forward Voltage, VSD -- V
3
2
60
3
2
--0.01
5 7 --10
IT16656
SW Time -- ID
1000
7
5
40
IS -- VSD
3
2
2
Drain Current, ID -- A
Ciss
1000
7
5
3
2
Coss
100
7
5
Crss
3
2
3
2
1.0
--0.1
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
7
10
--10
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
9
10
11
IT16660
--10
--5
--15
--20
Drain-to-Source Voltage, VDS -- V
--100
7
5
3
2
VDS= --10V
ID= --3.5A
--4.0
0
IT16658
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
0
--10
7
5
5
0
--20
Ambient Temperature, Ta -- °C
5
2
--40
IT16654
| yfs | -- ID
0.1
--0.01
Switching Time, SW Time -- ns
0
--60
--8
VDS= --10V
3
= --2.0A
4.5V, I D
V GS= --
50
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
10
100
25°C
--1
--0.5A
V, I D=
.8
1
-V GS=
--1.0A
,I =
--2.5V D
=
V GS
--25°C
0
150
C
0
200
Ta=75
°
200
RDS(on) -- Ta
250
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
--10
7
5
3
2
ASO
IDP= --14A (PW≤10μs)
ID= --3.5A
--1.0
7
5
3
2
--0.1
7
5
3
2
100
1m μs
s
10
DC
IT16659
ms
10
0m
s
op
er
ati
on
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT16661
No. A1994-3/4
SCH1343
PD -- Ta
Allowable Power Dissipation, PD -- W
1.2
When mounted on ceramic substrate
(900mm2×0.8mm)
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16662
Note on usage : Since the SCH1343 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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This catalog provides information as of November, 2011. Specifications and information herein are subject
to change without notice.
PS No. A1994-4/4