SCH1343 Ordering number : ENA1994 SANYO Semiconductors DATA SHEET SCH1343 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=55mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --20 V ±10 V Allowable Power Dissipation ID IDP PD 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7028-002 • Package : SCH6 • JEITA, JEDEC : SOT-563 • Minimum Packing Quantity : 5,000 pcs./reel --3.5 A --14 A 0.2 6 5 4 0.2 Packing Type : TL Marking 1.5 3 0.5 TL 0.56 2 0.25 0.05 1 YU LOT No. LOT No. 1.6 0.05 1.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 Electrical Connection 1, 2, 5, 6 3 4 http://semicon.sanyo.com/en/network N1611PE TKIM TC-00002663 No. A1994-1/4 SCH1343 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time min ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 VDS=--10V, ID=--1mA VDS=--10V, ID=--2A --0.4 typ Unit max V --1 μA ±10 μA --1.3 V 6 ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V RDS(on)3 Input Capacitance Ratings Conditions S 55 72 mΩ 78 110 mΩ 115 173 mΩ 1220 pF 82 pF Crss 72 pF td(on) tr 8.8 ns 35 ns 123 ns VDS=--10V, f=1MHz Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3.5A 61 ns 11 nC 1.9 nC 1.9 IS=--3.5A, VGS=0V --0.83 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --2A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G SCH1343 50Ω --5.5 --1.0 --1.5V --0.5 --1.4V VGS= --1.3V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --1.0 IT16652 VDS= --10V --0.5 0 0 --0.5 --1.0 25° --25° C C --1.5 --5.0 5°C --2.0 0 Ta= --2 5°C 75°C V --2.5V --6.0 --1.8V Drain Current, ID -- A --2.5 --6.5 --3.0 --8.0V --4.5V --3.0 ID -- VGS --7.0 25°C ID -- VDS --3.5 Drain Current, ID -- A S Ta= 7 P.G --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 IT16653 No. A1994-2/4 SCH1343 RDS(on) -- VGS ID= --0.5A --1.0A --2.0A 150 100 50 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 7 C 5° = Ta --2 1.0 25 7 75 °C °C 3 20 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VDD= --10V VGS= --4.5V tf 3 tr 2 td(on) 10 7 5 120 140 160 IT16655 --1.0 7 5 3 2 --0.1 7 5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT16657 Ciss, Coss, Crss -- VDS 10000 7 5 Ciss, Coss, Crss -- pF 100 7 5 100 VGS=0V f=1MHz 3 2 td(off) 80 Diode Forward Voltage, VSD -- V 3 2 60 3 2 --0.01 5 7 --10 IT16656 SW Time -- ID 1000 7 5 40 IS -- VSD 3 2 2 Drain Current, ID -- A Ciss 1000 7 5 3 2 Coss 100 7 5 Crss 3 2 3 2 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 10 --10 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 11 IT16660 --10 --5 --15 --20 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 VDS= --10V ID= --3.5A --4.0 0 IT16658 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V 0 --10 7 5 5 0 --20 Ambient Temperature, Ta -- °C 5 2 --40 IT16654 | yfs | -- ID 0.1 --0.01 Switching Time, SW Time -- ns 0 --60 --8 VDS= --10V 3 = --2.0A 4.5V, I D V GS= -- 50 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 100 25°C --1 --0.5A V, I D= .8 1 -V GS= --1.0A ,I = --2.5V D = V GS --25°C 0 150 C 0 200 Ta=75 ° 200 RDS(on) -- Ta 250 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 --10 7 5 3 2 ASO IDP= --14A (PW≤10μs) ID= --3.5A --1.0 7 5 3 2 --0.1 7 5 3 2 100 1m μs s 10 DC IT16659 ms 10 0m s op er ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16661 No. A1994-3/4 SCH1343 PD -- Ta Allowable Power Dissipation, PD -- W 1.2 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16662 Note on usage : Since the SCH1343 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1994-4/4