FTS2057 Ordering number : EN8989 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTS2057 General-Purpose Switching Device Applications Features • • • • • ON-resistance RDS(on)1=96mΩ(typ.) Input capacitance Ciss=1030pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 100 V 3 A PW≤10μs, duty cycle≤1% 12 A When mounted on ceramic substrate (2000mm2×0.8mm) 1.3 W 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7006A-009 • Package : TSSOP8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.95 Package Dimensions 3.0 0.125 Packing Type : TL 5 Marking 0.5 8 V ±20 6.4 4.5 LOT No. S2057 TL 1 4 0.95 0.25 0.05 1.0 0.425 0.65 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : No Contact 6 : No Contact 7 : No Contact 8 : Drain Electrical Connection 1, 8 4 SANYO : TSSOP8 2, 3 http://semicon.sanyo.com/en/network 82411PE TKIM TC-00002632 No.8989-1/4 FTS2057 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=3A, VGS=10V 96 125 mΩ RDS(on)2 ID=1.5A, VGS=4.5V 105 150 mΩ RDS(on)3 ID=1.5A, VGS=4V 110 155 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time min V(BR)DSS IDSS Input Capacitance Rise Time Ratings Conditions 100 V 1.2 VDS=10V, ID=3A 1 μA ±10 μA 2.6 V 5.2 S 1030 pF 80 pF Crss 42 pF td(on) tr 13 ns 13 ns 62 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=50V, VGS=10V, ID=3A IS=3A, VGS=0V 24 ns 19.4 nC 2.7 nC 4.0 nC 0.81 1.2 V Switching Time Test Circuit 10V 0V VDD=50V VIN ID=3A RL=16.7Ω VIN D PW=10μs D.C.≤1% VOUT G FTS2057 P.G 50Ω S ID -- VDS 3.0 V V VDS=10V 1.5 1.0 VGS=2.5V 3 2 °C 1 25 0.5 4 Ta= 75°C 4.5 V 2.8V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16575 0 0 0.5 1.0 1.5 2.0 --25 °C Drain Current, ID -- A 4.0 V V 10.0V 2.0 ID -- VGS 6 Ta=25°C 5 16.0 Drain Current, ID -- A 2.5 3.5 6.0V 3.0 2.5 Gate-to-Source Voltage, VGS -- V 3.0 3.5 IT16576 No.8989-2/4 FTS2057 RDS(on) -- VGS 140 120 100 80 60 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5°C --2 = Ta C 75° 3 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A SW Time -- ID 3 2 td(off) 3 2 tf tr td(on) 10 7 5 0 20 40 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A VGS -- Qg 10 0.1 7 5 3 2 0 0.2 0.4 0.6 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 16 18 20 IT16583 160 0.8 1.0 1.2 IT16580 f=1MHz Ciss 3 2 100 7 5 10 Coss Crss 0 10 20 30 40 50 60 70 80 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A 2 140 IT16578 Ciss, Coss, Crss -- VDS 1000 7 5 8 0 120 3 2 VDS=50V ID=3A 2 100 0.01 7 5 3 2 100 7 5 3 2 4 80 VGS=0V 10000 7 5 5 7 100 IT16581 6 60 IS -- VSD 3 2 1.0 0.1 Gate-to-Source Voltage, VGS -- V --20 Diode Forward Voltage, VSD -- V 3 2 0 --40 1.0 7 5 3 2 10 IT16579 VDD=50V VGS=10V 100 7 5 =1 VGS 50 0.001 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1000 7 5 0A =3. , ID 0.0V 10 7 5 3 2 C 25° 5 100 =4 S VG Ambient Temperature, Ta -- °C VDS=10V 7 = V GS IT16577 | yfs | -- ID 10 = I V, D 0 . 4 0 --60 16 .5A =1 , ID .5V A 1.5 150 5°C 160 200 --25° C 3.0A 25°C ID=1.5A Ta= 7 180 RDS(on) -- Ta 250 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 90 100 IT16582 ASO IDP=12A (PW≤10μs) 1 1 ms 10 0ms 0m s ID=3A DC 100 μs op era tio n Operation in this area is limited by RDS(on). 0.01 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate (2000mm2×0.8mm) 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 71000 IT16584 No.8989-3/4 FTS2057 PD -- Ta Allowable Power Dissipation, PD -- W 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16585 Note on usage : Since the FTS2057 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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