MCH6448 Ordering number : ENA2004 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6448 Low-Voltage Driver Switching Device Applications Features • • • • ON-resistance RDS(on)1=17mΩ (typ.) 1.2V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 32 A W 150 °C --55 to +150 °C 0.15 Packing Type : TL 4 TL 0.3 Electrical Connection 0.85 0.25 3 0.65 ZX LOT No. 2 LOT No. 0.07 Marking 0 t o 0.02 2.1 1.6 0.25 • Package : MCPH6 • JEITA, JEDEC : SC-88, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 1 A 1.5 Product & Package Information 5 V 8 When mounted on ceramic substrate (1200mm2×0.8mm) unit : mm (typ) 7022A-009 6 V ±9 PW≤10μs, duty cycle≤1% Package Dimensions 2.0 Unit 20 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 1, 2, 5, 6 3 4 http://semicon.sanyo.com/en/network 20112PE TKIM TC-00002664 No. A2004-1/4 MCH6448 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±7.2V, VDS=0V VDS=10V, ID=4A 7.7 RDS(on)1 ID=4A, VGS=4.5V 17 22 mΩ RDS(on)2 ID=2A, VGS=2.5V 20 28 mΩ RDS(on)3 ID=1A, VGS=1.8V 26 39 mΩ RDS(on)4 ID=0.5A, VGS=1.2V 62 124 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time min V(BR)DSS IDSS Input Capacitance Rise Time Ratings Conditions 20 VDS=10V, ID=1mA V 0.3 1 μA ±10 μA 1.0 V S 705 pF 150 pF Crss 125 pF td(on) tr 6 ns 47 ns 103 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=8A IS=8A, VGS=0V 81 ns 11.2 nC 1.3 nC 2.8 nC 0.8 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=4A RL=2.5Ω VIN D PW=10μs D.C.≤1% VOUT G MCH6448 50Ω ID -- VDS 2 1 1.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS=0.9V 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16738 8 6 4 2 0 --25° C 3 10 5°C 4 12 25°C 1.2V 0 VDS=10V 14 5 0 ID -- VGS 16 Drain Current, ID -- A 2.5V 1.8V 3.0V 6 4.5V 7 7.0V 8 Drain Current, ID -- A S Ta= 7 P.G 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT16739 No. A2004-2/4 MCH6448 RDS(on) -- VGS 1.0A 2.0A 80 4.0A 60 40 20 0 1 2 3 4 5 6 Gate-to-Source Voltage, VGS -- V 2 25°C -Ta= 7 75°C 5 25°C 3 3 5 7 2 1.0 3 5 Drain Current, ID -- A SW Time -- ID 7 10 IT16742 VDD=10V VGS=4.5V 3 2 tf 3 2 tr 10 7 5 --20 0 20 40 60 80 100 120 140 160 IT16741 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 7 5 1.2 IT16743 f=1MHz td(on) 1000 7 5 Ciss 3 2 Coss 100 7 5 Crss 3 3 2 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 10 5 7 100 100 7 5 3 2 Drain Current, ID -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 2 3 4 5 6 7 8 5 9 Total Gate Charge, Qg -- nC 10 11 12 IT16746 10 15 20 Drain-to-Source Voltage, VDS -- V VDS=10V ID=8A 4.0 0 IT16744 VGS -- Qg 4.5 0 --40 3 2 td(off) 100 7 5 =4.0A VGS=4.5V, ID 10 7 5 3 2 0.01 7 5 3 2 0.001 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1000 7 5 20 100 7 5 3 2 2 2 A V, I D=1.0 V GS=1.8 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 1.0 0.1 Gate-to-Source Voltage, VGS -- V 7 5 10 =2.0A .5V, I D V GS=2 40 0 --60 VDS=10V 7 VGS=1.2V, ID=0.5A 60 IT16740 | yfs | -- ID 100 80 5°C 25°C --25° C 0 100 Ta= 7 ID=0.5A 100 RDS(on) -- Ta 120 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 10 7 5 3 2 1.0 7 5 3 2 IT16745 ASO IDP=32A (PW≤10μs) ID=8A 100 μs 1m 10m s 100 ms DC ope rati on Operation in this area is limited by RDS(on). s 0.1 7 5 3 2 0.01 7 5 Ta=25°C 3 Single pulse 2 2 0.001 When mounted on ceramic substrate (1200mm ×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 0.1 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16747 No. A2004-3/4 MCH6448 PD -- Ta Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16748 Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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