EMH1405 Ordering number : ENA1667A SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=14mΩ(typ) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 34 A W 150 °C --55 to +150 °C • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.2 EMH1405-TL-H Taping Type : TL Marking KE 2.1 1.7 5 1 A 1.5 Product & Package Information 0.125 V 8.5 When mounted on ceramic substrate (1200mm2×0.8mm) unit : mm (typ) 7045-001 0.2 V ±20 PW≤10μs, duty cycle≤1% Package Dimensions 8 Unit 30 LOT No. TL 0.2 4 0.5 0.05 0.75 2.0 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 51612 TKIM TC-00002377/60210PE TK IM TC-00002377 No. A1667-1/7 EMH1405 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Conditions Ratings min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V VDS=10V, ID=4A ID=4A, VGS=10V 4.4 S 14 19 ID=2A, VGS=4.5V ID=2A, VGS=4V 24 34 mΩ 30 42 mΩ mΩ 820 pF 130 pF Crss 90 pF 9.5 ns Rise Time td(on) tr 25 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=8.5A IS=8.5A, VGS=0V 63 ns 28 ns 15 nC 2.6 nC 2.7 nC 0.8 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=4A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G EMH1405 P.G 50Ω S Ordering Information Device EMH1405-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1667-2/7 EMH1405 ID -- VDS 8 1.5 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RDS(on) -- VGS ID=4A 70 2A 60 50 40 30 20 10 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 5 IT15388 40 A =4.0 2V, I D = VGS .5A I =4 =2V, D VGS 30 A =10.0 4V, I D V GS= 20 10 --40 --20 0 20 40 60 80 100 120 2 C 5° --2 °C 75 = Ta 1.0 7 °C 25 5 3 2 160 VGS=0V 10 7 5 3 140 IT15390 IS -- VSD 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 Ambient Temperature, Ta -- °C 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 2 0.01 5 7 10 IT15391 Drain Current, ID -- A td(on) 10 tr 7 1.0 Ciss, Coss, Crss -- VDS f=1MHz 2 Drain Current, ID -- A 3 5 7 Coss 100 IT15393 Crss 7 2 10 Ciss 2 3 7 1.2 IT15392 3 3 5 1.0 5 5 3 0.8 7 5 2 0.6 2 Ciss, Coss, Crss -- pF tf 2 0.4 1000 5 3 0.2 3 td(off) 7 0 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 100 2 0.1 2 50 0 --60 16 VDS=10V 0.1 7 0.01 4 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta IT15389 | yfs | -- ID 10 1 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 80 0 IT15387 5°C 25°C --25° C 0.1 0 Ta=25°C Switching Time, SW Time -- ns 3 Ta= 7 0 100 7 4 1 Drain-to-Source Voltage, VDS -- V 0 5 2 VGS=2.5V 0.5 0 6 25°C 2.0 7 --25°C 10.0V 2.5 Ta=75 °C Drain Current, ID -- A 3.0V 6.0V 3.0 VDS=10V 9 16.0V Drain Current, ID -- A 3.5 ID -- VGS 10 4.5V 4.0V 4.0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT15394 No. A1667-3/7 EMH1405 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 VDS=15V ID=8.5A 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 2.0 IT15395 10 7 5 3 2 ASO IDP=34A (PW≤10μs) ID=8.5A 10 DC ms op 10 0m era s tio 1.0 7 5 3 2 0.1 7 5 3 2 10 μs 0μ 1m s s 10 n( Ta =2 5° C) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15510 When mounted on ceramic substrate (1200mm2×0.8mm) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15511 No. A1667-4/7 EMH1405 Embossed Taping Specification EMH1405-TL-H No. A1667-5/7 EMH1405 Outline Drawing EMH1405-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1667-6/7 EMH1405 Note on usage : Since the EMH1405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A1667-7/7