SANYO MCH5908_12

MCH5908
Ordering number : ENA1218A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon Junction FET
MCH5908
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
•
•
Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
efficiency greatly
The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
VDSX
VGDS
Gate Current
IG
Drain Current
ID
PD
Allowable Power Dissipation
Junction Temperature
Total Power Dissipation
PT
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
15
1 unit
V
--15
V
10
mA
50
mA
200
mW
300
mW
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7021A-009
• Package
: MCPH5
• JEITA, JEDEC
: SC-88A, SC-70-5, SOT-353
• Minimum Packing Quantity : 3,000 pcs./reel
5
0.15
MCH5908H-TL-E
MCH5908G-TL-E
Packing Type : TL
Marking
4
K NA
R
K
LOT No.
LOT No.
0 to 0.02
2.1
1.6
0.25
2.0
0.25
TL
1
2
3
0.65
0.3
0.07
0.85
Electrical Connection
4
5
1
5
2
3
4
1 : Drain1
2 : Source1/Source2
3 : Drain2
4 : Gate2
5 : Gate1
1
2
3
SANYO : MCPH5
http://www.sanyosemi.com/en/network/
91212 TKIM/22410AC TKIM TC-00002292 No. A1218-1/6
MCH5908
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate-to-Source Leakage Current
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
Ratings
Conditions
min
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
typ
Unit
max
--15
V
--1.0
VDS=5V, ID=100μA
--0.3
VDS=5V, VGS=0V
--0.7
10.0*
VDS=5V, VGS=0V, f=1kHz
24
VDS=5V, VGS=0V, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
nA
--1.5
V
32.0*
mA
35
mS
10.5
pF
3.5
pF
1.0
dB
The specifications shown above are for each individual J-FET.
* : The MCH5908 is classified by IDSS as follows (unit : mA).
Rank
G
H
IDSS
10 to 20
16 to 32
Ordering Information
Package
Shipping
MCH5908H-TL-E
Device
MCPH5
3,000pcs./reel
MCH5908G-TL-E
MCPH5
3,000pcs./reel
ID -- VDS
20
memo
Pb Free
ID -- VDS
20
VGS=0V
16
V
V GS=0
12
Drain Current, ID -- mA
Drain Current, ID -- mA
16
--0.1V
--0.2V
8
--0.3V
4
--0.3V
--0.4V
--0.5V
--0.6V
--0.7V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-to-Source Voltage, VDS -- V
20
8
--0.5V
--0.6V
0
22
--0.2V
4
--0.4V
--0.7V
--0.1V
12
0
2.4
2
4
6
8
10
Drain-to-Source Voltage, VDS -- V
ITR02749
ID -- VGS
16
VDS=5V
14
12
ITR02750
ID -- VGS
VDS=5V
IDSS=15mA
6
8
6
4
75°
C
8
10
--2
5°C
10
20
m
15 A
mA
10
mA
S =3
0m
12
Ta
=
A
14
12
25
°C
Drain Current, ID -- mA
16
ID
S
Drain Current, ID -- mA
18
4
2
2
0
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
0
0.2
IT04224
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
Gate-to-Source Voltage, VGS -- V
0.2
ITR02752
No. A1218-2/6
MCH5908
⏐yfs⏐ -- ID
5
A
30m
A
15m
3
=
I DSS
2
⏐yfs⏐ -- IDSS
100
VDS=5V
f=1kHz
Forward Transfer Admittance, ⏐yfs⏐ -- mS
Forward Transfer Admittance, ⏐yfs⏐ -- mS
7
10
7
5
3
2
VDS=5V
VGS=0V
f=1kHz
7
5
3
2
10
3
5
7
2
1.0
3
5
7
2
10
3
Drain Current, ID -- mA
5
7
VGS(off) -- IDSS
3
3
5
Drain Current, IDSS -- mA
2
IT04226
10
IT04225
Ciss -- VDS
3
VGS=0V
f=1MHz
2
Input Capacitance, Ciss -- pF
Cutoff Voltage, VGS(off) -- V
VDS=5V
ID=100μA
1.0
7
5
3
7
2
3
5
Drain Current, IDSS -- mA
IT04227
10
5
2
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
VDS=5V
ID=1mA
Rg=1kΩ
7
Noise Figure, NF -- dB
8
5
3
2
3
IT13691
NF -- f
10
6
4
2
2
3
5
7
10
2
Drain-to-Source Voltage, VDS -- V
VDS=5V
ID=1mA
f=1kHz
8
6
4
2
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
Signal Source Resistance, Rg -- kΩ
2 3
5 7 0.1
2 3
5 71000
ITR02759
2 3
5 7 1.0
2 3
5 7 10
Frequency, f -- kHz
IT13692
NF -- Rg
10
0
0.1
0
0.01
3
300
2 3
5 7100
ITR02758
PT, PD -- Ta
350
Allowable Power Dissipation, PT, PD -- mW
Reverse Transfer Capacitance, Crss -- pF
7
VGS=0V
f=1MHz
1.0
1.0
Noise Figure, NF -- dB
10
3
1.0
Crss -- VDS
10
2
PT Total power dissipation
250
200
PD 1unit
150
100
50
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15408
No. A1218-3/6
MCH5908
Taping Specification
MCH5908H-TL-E, MCH5908G-TL-E
No. A1218-4/6
MCH5908
Outline Drawing
MCH5908H-TL-E, MCH5908G-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No. A1218-5/6
MCH5908
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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confirmation.
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mentioned above.
This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1218-6/6