FTD2017C Ordering number : ENA1930 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017C General-Purpose Switching Device Applications Features • • • Low ON-resistance Mount heigt 1.1mm Drain common specifications • • • 2.5V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 20 ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2×0.8mm) 1unit V ±12 V 6 A 40 A 1.35 W Total Dissipation PD PT 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (1000mm2×0.8mm) Product & Package Information unit : mm (typ) 7006A-005 • Package : TSSOP8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.95 Package Dimensions 3.0 Packing Type : TL 5 0.5 8 0.125 Marking LOT No. 6.4 4.5 D2017C TL 1 4 0.95 0.25 0.05 1.0 0.425 0.65 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 SANYO : TSSOP8 http://semicon.sanyo.com/en/network 30211PA TKIM TC-00002574 No. A1930-1/4 FTD2017C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=6A, VGS=4.5V 13 17 23 mΩ RDS(on)2 ID=6A, VGS=4V 14 18 24 mΩ RDS(on)3 ID=3A, VGS=3.1V 15 19 30 mΩ RDS(on)4 ID=3A, VGS=2.5V 15.4 20 33 mΩ Turn-ON Delay Time td(on) See specified Test Circuit. 620 Rise Time tr See specified Test Circuit. 1160 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 3660 ns Fall Time tf Qg See specified Test Circuit. 2010 ns Total Gate Charge VDS=10V, VGS=4.5V, ID=6A 6.2 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A 1.7 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=6A, VGS=0V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 20 V 0.5 1 μA ±10 μA 1.3 VDS=10V, ID=6A V 7.5 S ns 1.3 nC 0.79 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=5A RL=2Ω VIN D VOUT PW=10μs D.C.≤1% Rg G P.G S 50Ω FTD2017C Rg=2.1kΩ ID -- VDS 8 VGS=1.5V 3 4 3 2 2 1 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16339 Ta= 75° C 4 5 0 --25 °C 5 6 °C 6 7 25 7 VDS=10V 9 Drain Current, ID -- A Drain Current, ID -- A 8 3.0V 2.5V 9 ID -- VGS 10 4.0V 10.0V 4.5V 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT16340 No. A1930-2/4 FTD2017C RDS(on) -- VGS 45 40 6A 30 25 20 15 10 5 0 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID 25° Source Current, IS -- A 7 5 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 10000 VDD=10V VGS=4.5V Switching Time, SW Time -- ns 7 tf 5 3 td(off) 2 tr 1000 7 td(on) 5 3 2 100 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 10 =6A V, I D =4.0 VGS 5 --40 --20 0 20 40 60 80 100 120 140 160 IT16342 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 10 s 10 10 0μ s 0m m s s op tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1000mm2×0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16347 0.6 0.8 1.0 1.2 IT16344 VDS=10V ID=6A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 IT16345 era 0.01 0.01 0.4 0 1 2 3 4 5 7 6 Total Gate Charge, Qg -- nC IT16346 PD -- Ta 1.6 1m DC 0.2 VGS -- Qg 4.5 7 IDP=40A (PW≤10μs) ID=6A 0 Diode Forward Voltage, VSD -- V Allowable Power Dissipation, PD -- W Drain Current, ID -- A ASO 1.0 7 5 3 2 0.1 7 5 3 2 15 0.01 5 7 10 IT16343 Drain Current, ID -- A 10 7 5 3 2 20 3 2 2 100 7 5 3 2 A I =3 2.5V, D = VGS A I =6 4.5V, D = S VG Ambient Temperature, Ta -- °C C C 5° --2 = Ta °C 75 1.0 25 10 7 5 3 2 =3A V, I D =3.1 VGS 30 IT16341 VDS=10V 5 35 0 --60 12 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 10 40 5°C 25°C --25° C 0 45 Ta= 7 35 ID=3A RDS(on) -- Ta 50 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 When mounted on ceramic substrate (1000mm2×0.8mm) 1.4 1.35 1.2 1.0 To t 0.8 1u al di nit ss 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 IT16348 No. A1930-3/4 FTD2017C Note on usage : Since the FTD2017C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2011. Specifications and information herein are subject to change without notice. PS No. A1930-4/4