SANYO VEC2315

VEC2315
Ordering number : EN8699
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFETs
VEC2315
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
ON-resistance RDS(on)1=105mΩ(typ.)
4V drive
High-density mounting
Protection diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
--60
V
±20
V
--2.5
A
PW≤10μs, duty cycle≤1%
--10
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.9
W
Total Dissipation
PD
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Product & Package Information
unit : mm (typ)
7012-002
• Package
: VEC8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.3
8
7
0.15
Packing Type : TL
6 5
Marking
2.3
UM
Lot No.
2
3
TL
4
0.65
2.9
0.75
1
0.07
0.25
2.8
0.25
Package Dimensions
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : VEC8
http://semicon.sanyo.com/en/network
30712PA TKIM TC-00002731 No.8699-1/4
VEC2315
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Ratings
Conditions
min
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
--60
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
--1.2
typ
Unit
max
V
--1
μA
±10
μA
--2.6
V
3.9
ID=--1.5A, VGS=--10V
ID=--0.75A, VGS=--4.5V
ID=--0.75A, VGS=--4V
S
105
137
mΩ
128
180
mΩ
138
194
mΩ
420
pF
54
pF
Crss
44
pF
Turn-ON Delay Time
td(on)
6.4
ns
Rise Time
tr
9.8
ns
Turn-OFF Delay Time
65
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--2.5A
36
ns
11
nC
1.4
nC
2
IS=--2.5A, VGS=0V
nC
--0.83
--1.2
V
Switching Time Test Circuit
0V
--10V
VDD= --30V
VIN
ID= --1.5A
RL=20Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
VEC2315
P.G
50Ω
ID -- VDS
--4.
0V
--3.
5V
--3
.0V
VDS= --10V
--4
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT15911
0
25°
C
--1
Ta=
7
--0.5
--2
0
--0.5
--1.0
--1.5
°C
--1.0
--3
5°C
Drain Current, ID -- A
5V
--4
.
--1.5
V
--2.5
V GS=
--25
--16.0V --10
.
--2.0
ID -- VGS
--5
0V
--6.0
V
--2.5
Drain Current, ID -- A
S
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
--3.0
--3.5
IT15912
No.8699-2/4
VEC2315
RDS(on) -- VGS
300
RDS(on) -- Ta
300
150
100
50
0
0
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
2
5
2
Ta
°C
75
1.0
7
--20
0
°C
25
5
20
40
60
80
100
120
140
3
160
IT15914
IS -- VSD
7
5
7
°C
-25
=-
--40
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
50
3
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Drain Current, ID -- A
3
--0.01
--0.2
7
5
Ciss, Coss, Crss -- pF
7
3
2
tr
td(on)
5
Ciss
3
2
100
7
5
5
Coss
3
3
Crss
2
--0.1
2
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
7
--7
3
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
9
10
11
IT15919
Operation in this area
is limited by RDS(on).
)
2
s
s
C
5°
0
0m
2
a=
(T
--1
3
2
m
10
n
3
2
--2
10
0μ
s
io
at
Drain Current, ID -- A
--1.0
7
5
--0.1
7
5
--3
ID= --2.5A
er
--4
10
op
--5
IDP= --10A (PW≤10μs)
C
D
--6
IT15918
ASO
s
1m
--8
1
--10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60
2
--10
7
5
0
--5
Drain-to-Source Voltage, VDS -- V
VDS= --30V
ID= --2.5A
--9
0
IT15917
VGS -- Qg
--10
--1.2
IT15916
1000
tf
7
--1.0
f=1MHz
5
10
--0.8
Ciss, Coss, Crss -- VDS
2
td(off)
7
--0.6
Diode Forward Voltage, VSD -- V
VDD= --30V
VGS= --10V
100
--0.4
IT15915
SW Time -- ID
2
Switching Time, SW Time -- ns
100
10
0.1
--0.01
Gate-to-Source Voltage, VGS -- V
150
0
--60
--16
VDS= --10V
3
5A
0.7
= -I
D
A
V,
0.75
4.0
= -= -I
S
D
,
5
. A
VG
5V
= --1
--4.
I
=
D
,
VGS --10.0V
=
VGS
IT15913
| yfs | -- ID
2
200
--25°
C
--0.75A
200
250
25°C
ID= --1.5A
Ta=
75°C
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0 2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT15920
No.8699-3/4
VEC2315
PD -- Ta
Allowable Power Dissipation, PD -- W
1.2
When mounted on ceramic substrate
(900mm2×0.8mm)
1.0
0.9
0.8
To
t
al
0.6
di
ss
1u
nit
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15921
Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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This catalog provides information as of March, 2012. Specifications and information herein are subject
to change without notice.
PS No.8699-4/4