VEC2315 Ordering number : EN8699 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFETs VEC2315 General-Purpose Switching Device Applications Features • • • • • ON-resistance RDS(on)1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation --60 V ±20 V --2.5 A PW≤10μs, duty cycle≤1% --10 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.9 W Total Dissipation PD PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Product & Package Information unit : mm (typ) 7012-002 • Package : VEC8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.3 8 7 0.15 Packing Type : TL 6 5 Marking 2.3 UM Lot No. 2 3 TL 4 0.65 2.9 0.75 1 0.07 0.25 2.8 0.25 Package Dimensions 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 SANYO : VEC8 http://semicon.sanyo.com/en/network 30712PA TKIM TC-00002731 No.8699-1/4 VEC2315 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --60 VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A --1.2 typ Unit max V --1 μA ±10 μA --2.6 V 3.9 ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V S 105 137 mΩ 128 180 mΩ 138 194 mΩ 420 pF 54 pF Crss 44 pF Turn-ON Delay Time td(on) 6.4 ns Rise Time tr 9.8 ns Turn-OFF Delay Time 65 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--2.5A 36 ns 11 nC 1.4 nC 2 IS=--2.5A, VGS=0V nC --0.83 --1.2 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --1.5A RL=20Ω VIN D PW=10μs D.C.≤1% VOUT G VEC2315 P.G 50Ω ID -- VDS --4. 0V --3. 5V --3 .0V VDS= --10V --4 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT15911 0 25° C --1 Ta= 7 --0.5 --2 0 --0.5 --1.0 --1.5 °C --1.0 --3 5°C Drain Current, ID -- A 5V --4 . --1.5 V --2.5 V GS= --25 --16.0V --10 . --2.0 ID -- VGS --5 0V --6.0 V --2.5 Drain Current, ID -- A S --2.0 --2.5 Gate-to-Source Voltage, VGS -- V --3.0 --3.5 IT15912 No.8699-2/4 VEC2315 RDS(on) -- VGS 300 RDS(on) -- Ta 300 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 2 5 2 Ta °C 75 1.0 7 --20 0 °C 25 5 20 40 60 80 100 120 140 3 160 IT15914 IS -- VSD 7 5 7 °C -25 =- --40 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 50 3 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 --0.01 --0.2 7 5 Ciss, Coss, Crss -- pF 7 3 2 tr td(on) 5 Ciss 3 2 100 7 5 5 Coss 3 3 Crss 2 --0.1 2 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 --7 3 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 11 IT15919 Operation in this area is limited by RDS(on). ) 2 s s C 5° 0 0m 2 a= (T --1 3 2 m 10 n 3 2 --2 10 0μ s io at Drain Current, ID -- A --1.0 7 5 --0.1 7 5 --3 ID= --2.5A er --4 10 op --5 IDP= --10A (PW≤10μs) C D --6 IT15918 ASO s 1m --8 1 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 2 --10 7 5 0 --5 Drain-to-Source Voltage, VDS -- V VDS= --30V ID= --2.5A --9 0 IT15917 VGS -- Qg --10 --1.2 IT15916 1000 tf 7 --1.0 f=1MHz 5 10 --0.8 Ciss, Coss, Crss -- VDS 2 td(off) 7 --0.6 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V 100 --0.4 IT15915 SW Time -- ID 2 Switching Time, SW Time -- ns 100 10 0.1 --0.01 Gate-to-Source Voltage, VGS -- V 150 0 --60 --16 VDS= --10V 3 5A 0.7 = -I D A V, 0.75 4.0 = -= -I S D , 5 . A VG 5V = --1 --4. I = D , VGS --10.0V = VGS IT15913 | yfs | -- ID 2 200 --25° C --0.75A 200 250 25°C ID= --1.5A Ta= 75°C 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT15920 No.8699-3/4 VEC2315 PD -- Ta Allowable Power Dissipation, PD -- W 1.2 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.9 0.8 To t al 0.6 di ss 1u nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15921 Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. PS No.8699-4/4