ECH8655R Ordering number : ENA1011A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8655R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 24 ID IDP Drain Current (Pulse) Allowable Power Dissipation V ±12 V 9 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8655R-TL-H Top View Packing Type : TL 0.25 2.9 8 TA 5 2.3 Lot No. TL 4 1 0.9 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 to 0.02 0.25 Marking 0.15 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 51612 TKIM/40908PE TIIM TC-00001311 No. A1011-1/7 ECH8655R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V 24 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=4.5A 4.8 RDS(on)1 ID=4.5A, VGS=4.5V 9 13 17 mΩ RDS(on)2 ID=4.5A, VGS=4.0V 9 13.5 18 mΩ RDS(on)3 ID=4.5A, VGS=3.1V 9.2 15 21 mΩ RDS(on)4 ID=2A, VGS=2.5V 10.5 18 25.5 mΩ 1 μA ±10 μA 1.3 8 V S Turn-ON Delay Time td(on) 320 ns Rise Time 1100 ns Turn-OFF Delay Time tr td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=10V, ID=9A IS=9A, VGS=0V 2400 ns 2100 ns 16.8 nC 1.6 nC 4.8 nC 0.8 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=4.5A RL=2.22Ω VOUT VIN D PW=10μs D.C.≤1% Rg G P.G 50Ω S ECH8655R Rg=1kΩ Ordering Information Device ECH8655R-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1011-2/7 ECH8655R ID -- VDS 2 .5 5 4 3 2 3 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V 0 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 25 ID=2.0A 4.5A 15 10 5 0 0 2 4 6 8 Source Current, IS -- A C 5° °C 75 Ta °C 25 3 2 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 IT13159 5 VDD=10V VGS=4V 3 tf 1000 tr 7 5 td(on) 3 2 100 0.1 .5A I =4 4.0V, D = S VG 10 5 0 50 100 150 200 IT13158 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT13160 VGS -- Qg 10 td (off) 2 15 Diode Forward Voltage, VSD -- V SW Time -- ID 7 20 0.001 0.1 Gate-to-Source Voltage, VGS -- V 1.0 0.1 2A I D= 5V, . 4.5A 2 = I = V GS 3.1V, D A = =4.5 VGS , ID V 5 . =4 VGS 10 7 5 3 2 7 -2 =- 25 Ambient Temperature, Ta -- °C VDS=10V 5 2.0 IT13156 30 IT13157 | yfs | -- ID 10 1.5 RDS(on) -- Ta 0 --50 10 Gate-to-Source Voltage, VGS -- V 1.0 35 Ta=25°C 35 20 0.5 Gate-to-Source Voltage, VGS -- V IT13155 5°C 25° C --25 °C 0.1 0 Ta= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 1 VGS=1.0V 0 Forward Transfer Admittance, | yfs | -- S 5 2 1 Switching Time, SW Time -- ns 6 25° C --25°C 1.5V Ta= 75° C 6 7 Drain Current, ID -- A Drain Current, ID -- A 7 VDS=10V 8 4.5V 4.0V 8 ID -- VGS 9 V 3.1V 9 VDS=10V ID=9A 8 6 4 2 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13236 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC 18 20 IT13237 No. A1011-3/7 ECH8655R ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s 1m ID=9A 10 ms 0m s s 10 DC Operation in this area is limited by RDS(on). PD -- Ta 1.8 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 op era tio 0.1 7 Ta=25°C 5 Single pulse 3 When mounted on ceramic substrate 2 (900mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 n When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 ss 1u 0.8 Di ni t ip ati on 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13391 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13154 No. A1011-4/7 ECH8655R Embossed Taping Specification ECH8655R-TL-H No. A1011-5/7 ECH8655R Outline Drawing ECH8655R-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1011-6/7 ECH8655R Note on usage : Since the ECH8655R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A1011-7/7