ECH8664R Ordering number : ENA1185 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit 30 V ±12 V 7 A ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.3 W Total Dissipation When mounted on ceramic substrate (900mm2✕0.8mm) Channel Temperature PT Tch Storage Temperature Tstg 1.4 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : TK Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 30 V VDS=30V, VGS=0V IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 ⏐yfs⏐ VDS=10V, ID=3.5A 4.5 1 μA ±10 μA 1.3 V 7.5 S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72308PE TI IM TC-00001451 No. A1185-1/4 ECH8664R Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Ratings Conditions min ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V 12.5 18 23.5 13 19 25 mΩ RDS(on)3 RDS(on)4 ID=2A, VGS=3.1V ID=2A, VGS=2.5V 14.5 21 27.3 mΩ 24 34 mΩ 14.5 See specified Test Circuit. 270 See specified Test Circuit. 850 ns td(off) tf See specified Test Circuit. 3300 ns See specified Test Circuit. 1700 ns 10 nC 2.1 nC Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Package Dimensions VDS=10V, VGS=4.5V, ID=7A VDS=10V, VGS=4.5V, ID=7A VDS=10V, VGS=4.5V, ID=7A IS=7A, VGS=0V ns 2.0 0.75 nC 1.2 V Electrical Connection unit : mm (typ) 7011A-003 8 7 6 5 Top View 2.9 0.25 mΩ td(on) tr Gate-to-Source Charge 0.15 5 2.3 0 to 0.02 2.8 Unit max RDS(on)1 RDS(on)2 Qg 8 typ 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.65 0.3 0.9 0.25 Top view 4 1 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=15V VIN 4V 0V ID=3.5A RL=4.3Ω VOUT VIN D PW=10μs D.C.≤1% Rg G P.G ECH8664R 50Ω S Rg=1kΩ No. A1185-2/4 ECH8664R ID -- VDS 9 VGS=1.5V 4 3 4 3 2 1 1 0 0.4 0 0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=2.0A 40 3.5A 35 30 25 20 15 10 5 0 2 4 6 8 5 --25 Ta= 3 °C 75°C 25°C 2 1.0 7 5 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 IT13620 3 tf 2 1000 tr 7 5 td(on) 3 A =2.0 , ID 2.5V 25 2 5A =3. , ID 4.5V = VGS 20 = VGS A =3.5 V, I D =4.0 S VG 15 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13619 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V 0.9 1.0 IT13621 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V VDD=10V VGS=4.5V td(off) 5 =3 S VG 30 0.01 7 5 3 2 0.001 0.1 SW Time -- ID 7 35 10 7 5 3 2 Source Current, IS -- A 7 =2 , ID V 1 . Ambient Temperature, Ta -- °C VDS=10V 10 2.5 IT13617 .0A 40 IT13618 ⏐yfs⏐ -- ID 3 2.0 45 5 -60 10 Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 50 Ta=25°C 45 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 50 0.5 IT13807 25° C --25 °C 0.3 5°C 0.2 Ta= 7 0.1 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 5 2 0 Forward Transfer Admittance, ⏐yfs⏐ -- S 6 --25°C 5 25° C 6 7 5°C 7 Ta= 7 Drain Current, ID -- A Drain Current, ID -- A 8 0 Switching Time, SW Time -- ns VDS=10V 9 8 2 ID -- VGS 10 10.0 V 4.5 V 4.0 V 3.1 V 2.5 V 10 VDS=10V ID=7A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 0.01 0 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT13684 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT13685 No. A1185-3/4 ECH8664R ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 1m ID=7A 0μ s ms 0m s op era Operation in this area is limited by RDS(on). s 10 10 DC PD -- Ta 1.6 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 tio 0.1 7 Ta=25°C 5 Single pulse 3 2 When mounted on ceramic substrate 2 0.01 (900mm ✕0.8mm) 1unit 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 n When mounted on ceramic substrate (900mm2✕0.8mm) 1.4 1.3 1.2 To tal 1.0 0.8 Di ss 1u ni t ip ati on 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13808 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT13799 Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1185-4/4