SANYO LA75501V_07

Ordering number : ENA0224
Monolithic Linear IC
LA75501V
For Use in TV/VTR Applications
VIF/SIF Signal Processing IC
Overview
The LA75501V is an adjustment free VIF/SIF signal processing IC for PAL TV/VCR. It supports 38MHz, 38.9MHz, and
39.5MHz as the IF frequencies, as well as PAL sound multi-system (M/N,B/G, I, D/K), and contains an on-chip sound
carrier trap and sound carrier BPF. To adjust the VCO circuit, AFT circuit, and sound filter, 4MHz external crystal or
4MHz external signal is needed.
Function
• VIF Block:
VIF Amplifier, PLL Detector, IF AGC, RF AGC, Equalizer, amplifier, Buzz Canceller, SIF Trap,
Digital AFT, FLL, 4MHz X’tal oscillation
• 1st SIF Block: 1st SIF Amplifier, 1st SIF Detector, 1st SIF AGC
• SIF Block:
Limiter Amplifier Down Converter, PLL FM Detector SIF PLL SIF VCO, SIF BPF
• Others:
IF SW (38.9MHz, 38MHz), SIF4 System SW (B/G, I, D/K, M/N), IFAGC 2nd filter
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Maximum Supply voltage
VCC
7
V
Circuit voltage
V16
VCC
V
V18
VCC
V
Circuit Current
I30
-1
mA
I17
+0.5
mA
I6
-10
mA
I4
Allowable power dissipation
Pd max
Ta≤80°C *
-3
mA
500
mW
Operating temperature
Topr
-20 to +85
°C
Storage temperature
Tstg
-55 to +150
°C
* Mounted on a board : 65×72×1.6mm3,paper phenol board.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
92706 / 22706 MS OT B8-4910 No.A0224-1/10
LA75501V
Operating Ranges at Ta = 25°C
Parameter
Recommended supply voltage
Operating supply voltage
Symbol
Conditions
Ratings
VCC
VCC op
Unit
5.0
V
4.5 to 6.0
V
Electrical Characteristics at Ta = 25°C, VCC = 5V, fp = 38.9MHz
VIF Block
Parameter
Symbol
Ratings
Conditions
min
Circuit current
typ
I21
64.0
Collector load 30k VC2 = 9V
Unit
max
73.6
mA
Maximum RF AGC voltage
V17H
8.5
9
Minimum RF AGC voltage
V17L
0.0
0.3
0.7
V
vi
33
39
45
dBµV
Input sensitivity
AGC range
Maximum allowable input
No-signal video output voltage
GR
58
Vi max
92
97
V6
2.9
3.3
V
dB
dBµV
3.7
V
Sync. Signal tip voltage
V6tip
0.9
1.2
1.5
V
Video output amplitude
VO
1.5
1.8
2.1
Vp-p
Video S/N
S/N
B/G
48
52
C-S best
IC-S
PS = 10dB
26
32
38
Differential gain
DG
80dBµ, 87.5% MOD
5
10
%
Differential phase
DP
80dBµ, 87.5% MOD
2
10
°C
Black noise threshold voltage
VBTH
0.7
Black noise clamp voltage
dB
dB
V
VBCL
1.8
VIF input resistance
Ri
2.5
3.0
kΩ
VIF input capacitance
Ci
3
6
PF
Maximum AFT voltage
V16H
4.3
4.7
5.0
Minimum AFT voltage
V16L
0
0.2
0.7
V
AFT tolerance 1
dfa1
±35
±70
KHz
AFT tolerance 2
dfa2
±35
±70
KHz
55
80
mV/kHz
30
60
MHz
ATF detection sensitivity
sf
f = 38.9MHz
f = 38.0MHz
RL = 100k//100KΩ
30
V
V
AFT Dead Zone
fda
APC pull-in range (U)
fpu
1.5
2.0
MHz
APC pull-in range (L)
fpl
1.5
2.0
MHz
VCO maximum
dfu
1.5
2.0
MHz
dfl
1.5
2.0
MHz
β
2.0
4.0
N Trap 1 (4.5M)
NT1
-30
-35
N Trap 2 (4.8M)
NT1-1
-19
-24
dB
B/G Trap 1 (5.5M)
BT1
-27
-32
dB
B/G Trap 2 (5.85M)
dB
variable range (U)
VCO maximum
variable range (L)
VCO control sensitivity
8.0
kHz/mV
dB
BT1-1
-20
-25
I Trap 1 (6.0M)
IT1
-25
-30
dB
I Trap 2 (6.55M)
IT1-1
-15
-20
dB
D/K Trap1 (6.5M)
DT1
-25
-30
Group delay 1 NTSC (3.0M)
ngd1
30
60
90
ns
ngd1-1
160
230
300
ns
Group delay 1-1 NTSC (3.5M)
Group delay 2 B/G (4M)
dB
bgd2
70
100
130
ns
bgd2-1
160
230
300
ns
bgd3
20
50
80
ns
Group delay 3-1 I (4.4M)
bgd3-1
60
90
120
ns
Group delay 4 D/K (4M)
bgd4
0
30
60
ns
bgd4-1
10
40
70
ns
Group delay 2-1 B/G (4.4M)
Group delay 3 I (4M)
Group delay 4-1 D/K (4.4M)
No.A0224-2/10
LA75501V
1st SIF Block
Parameter
Symbol
Ratings
Conditions
min
Conversion gain
Unit
typ
max
VG
fp-5.5MHz,Vi = 500µV
26
32
36
dB
SIF carrier output level
So
Vi = 10mV
100
1st SIF maximum input
Si max
So±2dB
106
1st SIF input resistance
R is
2.0
2.4
KΩ
1st SIF input capacitance
C is
3
6
PF
mVrms
dBµV
SIF Block
Parameter
Symbol
Ratings
Conditions
min
Limiting sensitivity
Vi (lim)
FM detector output voltage
VO (FM)
f = 5.5MHz
∆F = ±30kHz at 400Hz
AM rejection ratio
AMR
AM = 30% at 400Hz
Distortion
THD
f = 5.5MHz ∆F = ±30kHz
FM detector output S/N
S/N (FM)
BPF 3dB band width
Unit
typ
max
46
52
58
dBµV
480
600
750
mVrms
50
60
dB
0.3
DIN. Audio
55
BW
1.0
%
60
dB
±100
kHz
PAL de-emphasis
Pdeem
fm = 3kHz
-3
dB
NTSC de-emphasis
Ndeem
fm = 2kHz
-3
dB
6
dB
PAL/NT Audio voltage gain
GD
difference
Others
Parameter
Symbol
Ratings
Conditions
min
Minimum 4MHz level
X4MIN
Terminal value
Unit
typ
max
80
86
92
dBµ
(at external input)
SIF system SW threshold voltage
V13
1.4
V
V14
IF system SW threshold voltage
V15
Split/Inter SW
V20
270
0.5
KΩ
V
System Changeover
SW/SIF system SW
The SIF system can be changed over by setting A (pin 13) and B (pin 14) to GND and the open state respectively.
A
B
GND
GND
GND
OPEN
OPEN
GND
OPEN
OPEN
B/G
I
D/K
M/N
O
O
O
O
FM DET
LEVEL
De-emphasis
6dB
75µs
0dB
50µs
0dB
50µs
0dB
50µs
Note: ‘O’ indicates that the system is selected.
IF system SW
The IF frequency is selected 38.9MHz mode with the pin 15 (crystal oscillation) open.
The IF frequency is selected 38MHz mode by adding 220KΩ between the pin 15 and GND.
Inter carrier SW
Inter-carrier is selected by setting the 1st SIF input (pin 20) to GND.
No.A0224-3/10
LA75501V
Package Dimensions
unit : mm
3191B
9.75
0.5
5.6
7.6
16
30
1
15
0.65
0.15
0.22
1.5max
0.1
(1.3)
(0.33)
SANYO : SSOP30(275mil)
Pin Assignment
No.A0224-4/10
LA75501V
Block Diagram and AC Characteristics Test Circuit
Input Impedance Test Circuit
LA75510V
No.A0224-5/10
LA75501V
Test Conditions
V1. Circuit current [I21]
(1) External AGC (V18 = 1.5V)
(2) RF AGC VR MAX
(3) Connect an ammeter to the VCC and measure the incoming current to pin 17.
V2. V3. Maximum RF AGC voltage, Minimum RF AGC voltage [V17H, V17L]
(1) Internal AGC
(2) Input a 38.9MHz, 10mVrms, continuous wave to the VIF input pin.
(3) Adjust the RF AGC VR (resistance max.) and measure the maximum RF AGC voltage.
(4) Adjust the RF AGC VR (resistance min.) and measure the minimum RF AGC voltage.
(3), (4) Measuring point F
V4. Input sensitivity [Vi]
(1) Internal AGC
(2) fp = 38.9MHz 400Hz 40% AM (VIF input)
(3) Turn off the SW1 and put 100kΩ through.
(4) Measure the VIF input level at which the 400Hz detection output level at test point A becomes 0.7Vp-p.
V5.
AGC range [GR]
(1) Apply the VCC voltage to the external AGC, If AGC (pin 18).
(2) In the same manner under the same conditions as for V4 (input sensitivity), measure the VIF input level at which
the detection output level becomes 0.7Vp-p. ····· Vil *Vi: Input sensitivity
(3) GR = 20log
Vil
dB
Vi
V6. Maximum allowable input [Vi max]
(1) Internal AGC
(2) fp = 38.9MHz 15kHz 78% AM (VIF input)
(3) VIF input level at which the detection output level at test point A becomes video output (VO) ±1dB.
V7. No-signal video output voltage [V6]
(1) Apply the VCC voltage to the external AGC, IF AGC (pin 18).
(2) Measure the DC voltage of VIDEO output (A).
V8. Sync. signal tip voltage [V6tip]
(1) Internal AGC
(2) Input a 38.9MHz, 10mVrms, continuous wave to the VIF input pin.
(3) Measure the DC voltage of VIDEO output (A).
V9. Video output level [VO]
(1) Internal AGC
(2) fp = 38.9MHz 15kHz 78% AM
Vi = 10mVrms (VIF input)
(3) Measure the peak value of the detection output level at test point A. (Vp-p)
V10. Video S/N [S/N]
(1) Internal AGC
(2) fp = 38.9MHz CW = 10mVrms (VIF input)
(3) Measure the noise voltage at test point A in RMS volts through a 10kHz to 4MHz band-pass filter.
····· Noise voltage (N)
(4) S/N = 20log Video voltage (Vp-p) = 20log 1.12Vp-p
N (Vrms)
N(Vrms)
(dB)
No.A0224-6/10
LA75501V
V11. C/S beat [Ics]
(1) Apply DC voltage to the external AGC IF AGC (pin 18) and vary it.
(2) fp = 38.9MHz CW;10mVrms
fc = 34.47MHz CW;10mVrms − 10dB
fs = 33.4MHz CW;10mVrms − 10dB
(3) Adjust the IF AGC (pin 18) voltage so that the output level at test point A becomes 1.3Vp-p.
(4) Measure the difference between the levels for 4.43MHz and 1.07MHz components at test point A.
V12.V13. Differential gain, differential phase [DG, DP]
(1) Internal AGC
(2) fp = 38.9MHz APL50% 87.5% Modulation video signal
Vi = 10mVrms
(3) Measure the DG and DP at test point A.
V14.V15. Black noise threshold and clamp voltage [VBTH, VBCL]
(1) Apply DC voltage (1 to 3V) to the external AGC, IF AGC (pin 18) and adjust the voltage.
(2) fp = 38.9MHz 400Hz 40% AM 10mVrms (VIF input)
(3) Adjust the IF AGC (pin 18) voltage to operate the noise canceller.
Measure the VBTH, VBCL at test point A.
V16. V17. VIF input resistance, input capacitance [Ri, Ci]
(1) External AGC (V18 = 2V)
(2) Referring to the Input Impedance Test Circuit, measure Ri and Ci with an impedance analyzer.
No.A0224-7/10
LA75501V
V18. V19. Maximum, minimum AFT voltage, AFT detection sensitivity [V16H, V16L]
(1) Internal AGC
(2) fp = 38.9MHz ±1.5MHz Vi = 10mVrms (VIF input)
(3) Measure maximum and minimum AFT output voltage (at the measuring point B) by changing the input
frequency.
(4) Maximum voltage: V16H, minimum voltage: V16L.
V20.V21.V22.V23. AFT tolerance 1,2,AFT detector sensitivity, AFT Dead Zone [dfa, Sf, fda]
(1) Measure the frequency deviation when the voltage at the measuring point B changes from V1 to V2. ·····∆f
Sf (mV/kHz) =
V1−V2
∆f
(2) Measure the width in which the voltage at the measuring point B does not change.
(3) Calculate as follows:
fda (kHz) = f2 − f1
(4) Calculate as follows:
IF Center frequency: 38.9MHz, 38MHz
dfa (kHz) = fc−
f1 + f2
2
V24.V25. APC pull-in range [fpu, fpl]
(1) Internal AGC
(2) FLL: Free
(3) fp = 33MHz to 44MHz CW;10mVrms
(4) Adjust the SG signal frequency to be higher than fp = 38.9MHz to bring the PLL to unlocked state.
Note; The PLL is taken as in unlocked state when a beat signal appears at test point A.
(5) When the SG signal frequency is lowered, the PLL is brought to locked state again. ····· f1
(6) Lower the SG signal frequency to bring the PLL to unlock state.
(7) When the SG signal frequency is raised, the PLL is brought to locked state again. ····· f2
(8) Calculate as follows:
fpu = f1 − 38.9MHz
fpl = f2 − 38.9MHz
V26.V27. VCO maximum variable range (U, L) [dfu, dfl]
(1) Apply the VCC voltage to the external AGC, IF AGC (pin 18).
(2) fl is taken as the frequency when 1V is applied to the APC pin (pin 9). In the same manner,
fu is taken as the frequency when 5V is applied to the APC pin (pin 9).
dpu = fu − 38.9MHz
dfl = fl − 38.9MHz
No.A0224-8/10
LA75501V
V28. VCO control sensitivity [β]
(1) Apply the VCC voltage to the external AGC, IF AGC (pin 18).
(2) Apply the 3V to the external FLL, FLL (pin 10).
(3) Pick up the VCO oscillation frequency from the VIDEO output (A), GND, etc.
And adjust the VCO coil so that the frequency becomes 38.9MHz.
(4) f1 is taken as the frequency when 2.8V is applied to the APC pin (pin 9).
In the same manner, f2 is taken as the frequency when 3.2V is applied to the APC pin (pin 9).
β = f2−
f1 − f2
400
(kHz/mV)
F1. 1st SIF conversion gain [VG]
(1) Internal AGC
(2) fp = 38.9MHz CW;10mV (VIF input)
fs = 33.4MHz CW;500µV (1st SIF input) ····· V1
(3) measure the detection output level at test point C (5.5MHz) ····· V2
(4) VG = 20log
V2
dB
V1
F2. 5.5MHz output level [So]
(1) Internal AGC
(2) fp = 38.9MHz CW; 10mV (VIF input)
fs = 33.4MHz CW; 10mV (1st SIF input) ····· V1
(3) Measure the detection output level at test point C (5.5MHz). ····· So (mVrms)
F3. 1st maximum input [Si max]
(1) Internal AGC
(2) fp = 38.9MHz CW; 10mV (VIF input)
fs = 33.4MHz CW; Variable (1st SIF input)
(3) Input level at which the detection output (5.5MHz) at test point C becomes So ±2dB. ····· Si max
F4.F5. 1st SIF input resistance, input capacitance [Ri (SIF1), Ci (SIF1)]
(1) Referring to the Input Impedance Test Circuit, measure Ri and Ci with an impedance analyzer.
S1. SIF Limiting sensitivity [Vi (lim)]
(1) Apply the VCC voltage to the external AGC, IF AGC (pin 18).
(2) fs = 5.5MHz fm = 400Hz ∆F = ±300kHz (SIF input)
(3) Set the SIF input level to 31.6mVrms and measure the level at test point D. ····· V1
(4) Lower the SIF input level and measure the input level which becomes V1. ····· 3dB.
S2.S4. FM detection output voltage, total harmonics distortion [VO(FM), THD]
(1) Apply the VCC voltage to the external AGC, IF AGC (pin 18).
(2) fs = 5.5MHz fm = 400Hz ∆f = ±30kHz
(SIF input Vi = 31.6mVrms)
(3) Measure the FM detection output voltage, total harmonics distortion at test point D.
S3. AM rejection ratio [AMR]
(1) External AGC (V18 =VCC)
(2) fs = 5.5MHz fm = 400Hz AM = 30%
(SIF input Vi = 31.6mVrms)
(3) Measure the output level at test point D. ····· VAM
V (DET)
(4) AMR = 20log O
dB
VAM
S5. SIF S/N [S/N (FM)]
(1) External AGC (V15 = VCC)
(2) fs = 5.5MHz NO MOD Vi = 31.6mVrms
(3) Measure the output level at test point D. ····· Vn
(4) S/N = 20log
VO (DET)
dB
Vn
No.A0224-9/10
LA75501V
S7.S8. PAL, NT de-emphasis [Pdeem, Ndeem]
(1) External AGC (V18 = VCC)
(2) fs = 5.5MHz fm = 3kHz ∆F = ±30kHz
(SIF input Vi = 31.6mVrms)
(3) Open system switches (A (pin 13) and B (pin 14)). (BG mode)
(4) Measure the FM detector output voltage at test point D. ····· Vp
(5) Calculate as follows:
Pdeem (dB) = Vp − VO (FM)
(6) fs = 4.5MHz fm = 2kHz ∆F = ±30kHz
(SIF input Vi = 31.6mVrms)
(7) Set system switches [A (pin 13) and B (pin 14)] to GND. (NT mode)
(8) Measure the FM detector output voltage at test point D. ····· Vp
(9) Calculate as follows:
Ndeem (dB) = Vnt − VO (FM)
S9. PAL/NT Audio voltage gain difference [GD]
(1) External AGC (V18 =VCC)
(2) fs = 4.5MHz fm = 400Hz ∆F = ±30kHz
(SIF input Vi = 31.6mVrms)
(3) Set system switches [A (pin 13) and B (pin 14)] to GND.
(4) Measure the FM detector output voltage at test point D. ····· Vnt
(5) Calculate as follows:
GD (db) = Vnt − VO (FM)
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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This catalog provides information as of February, 2006. Specifications and information herein are subject
to change without notice.
PS No.A0224-10/10