SFT1302 Ordering number : ENA1178 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SFT1302 General-Purpose Switching Device Applications Features • • • Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Symbol Conditions Ratings VDSS VGSS Unit --35 ID IDP PW≤10μs, duty cycle≤1% V ±20 V --11 A --44 A 1.0 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Conditions Ratings min typ V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=--35V, VGS=0V VGS=±16V, VDS=0V --35 VGS(off) ⏐yfs⏐ VDS=--10V, ID=--1mA --1.2 VDS=--10V, ID=--5.5A 5.2 Marking : T1302 Unit max V --1 μA ±10 μA --2.6 V 8.7 S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 60309PA MS IM TC-00001157 No. A1178-1/4 SFT1302 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--5.5A, VGS=--10V ID=--5.5A, VGS=--4.5V Input Capacitance RDS(on)3 Ciss Output Capacitance Coss ID=--5.5A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz Ratings Conditions min typ Unit max 39 51 mΩ 55 77 mΩ 65 91 mΩ 1240 pF 185 pF pF Reverse Transfer Capacitance Crss td(on) VDS=--20V, f=1MHz See specified Test Circuit. 140 Turn-ON Delay Time 14 ns Rise Time tr See specified Test Circuit. 100 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 95 ns Fall Time tf See specified Test Circuit. 75 ns Total Gate Charge Qg 24 nC Gate-to-Source Charge Qgs VDS=--17V, VGS=--10V, ID=--11A VDS=--17V, VGS=--10V, ID=--11A 3.5 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--17V, VGS=--10V, ID=--11A IS=--11A, VGS=0V 5.2 --0.95 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm(typ) 7003-004 0.5 0.6 1 2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.8 1 7.5 0.8 1.6 0.85 1.2 SANYO : TP 1.2 5.5 0.85 0.7 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 0.5 V 7.0 2.3 6.5 5.0 nC --1.5 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit VDD= --17V VIN ID= --5.5A RL=3.1Ω 0V --10V VOUT D VIN PW=10μs D.C.≤1% G P.G 50Ω SFT1302 S No. A1178-2/4 SFT1302 ID -- VDS .0V ID -- VGS VDS= --10V --15 --14 --7 --6 --3.0V --5 --4 --3 --13 --12 --11 --10 --9 --8 --7 --6 --5 25° --25° C C V --3.5 --16 . --8 --4 --16 Drain Current, ID -- A --9 --17 --4 .5 V 0V --10.0 V --10 Drain Current, ID -- A --8 . --6 0V .0V --11 --3 --2 --1 --1 0 0 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 80 60 40 20 --2 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V C 5° --2 = Ta °C 75 2 1.0 7 5 3 --4.0 IT13578 60 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT13580 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 --0.01 --0.2 3 --0.4 --0.6 --0.8 --1.2 --1.4 IT12582 Ciss, Coss, Crss -- VDS 3 VDD= --20V VGS= --10V f=1MHz 2 Ciss Ciss, Coss, Crss -- pF td(off) 100 7 tf 5 3 tr 2 1000 7 5 3 Coss 2 Crss td(on) 10 7 --0.1 --1.0 Diode Forward Voltage, VSD -- V IT13581 SW Time -- ID 3 2 --3.5 --10 7 5 5 3 --3.0 A 5.5 = -I D , 4V = -.5A V GS = --5 I D , .5V = --4 VGS A = --5.5 V, I D 0 1 -V GS= 80 3 2 °C 25 7 --2.5 Case Temperature, Tc -- °C ⏐yfs⏐ -- ID 10 --2.0 100 IT13579 VDS= --10V 0.1 --0.01 Switching Time, SW Time -- ns --16 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 2 --14 --1.5 RDS(on) -- Tc 0 --60 0 0 --1.0 Gate-to-Source Voltage, VGS -- V 120 Ta=25°C ID= --5.5A 120 --0.5 IT13577 RDS(on) -- VGS 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 --25°C --0.2 25°C --0.1 Ta=7 5°C 0 3 Ta =7 5° C --4 VGS= --2.5V --2 100 7 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 --10 2 3 IT13583 0 --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V --35 IT13584 No. A1178-3/4 SFT1302 VGS -- Qg --10 --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 VDS= --20V ID= --11A --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 Total Gate Charge, Qg -- nC --0.1 7 5 3 2 Operation in this area is limited by RDS(on). Tc=25°C Single pulse 5 7--0.1 sin k 0.4 0.2 0 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W he at --1.0 7 5 3 2 5 7 IT13586 PD -- Tc 20 0.8 No ID= --11A IT13585 1.0 0.6 PW≤10μs 10 1m 0μs s 1 10 0ms 0m DC s op era tio n --10 7 5 3 2 --0.01 --0.01 2 3 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 25 ASO IDP= --44A 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13587 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT13588 Note on usage : Since the SFT1302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice. PS No. A1178-4/4