SFT1440 Ordering number : ENA1816 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1440 General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=6.2Ω(typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 1.5 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% V 6.0 A 1.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 0.5 1.5 5.5 0.5 1 2 2.3 7.5 0.8 0.8 1.6 0.6 1.2 1 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 0 t o 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Product & Package Information Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT553 • Minimum Packing Quantity : 500 pcs./bag Marking(TP, TP-FA) 2 0.6 0.5 3 2.5 0.85 0.85 0.7 1.2 1.5 4 7.0 5.5 4 2.3 6.5 5.0 0.5 7.0 2.3 6.5 5.0 Electrical Connection 2,4 • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT428 • Minimum Packing Quantity : 700 pcs./reel T1440 Packing Type(TP-FA) : TL 1 LOT No. TL 3 http://semicon.sanyo.com/en/network 81110PE TK IM TC-00002437 No. A1816-1/4 SFT1440 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 600 V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±24V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=0.8A 1.0 Static Drain-to-Source On-State Resistance Input Capacitance RDS(on) Ciss 130 pF Output Capacitance Coss ID=0.8A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz 25 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 4.0 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 9.1 ns See specified Test Circuit. 15 ns See specified Test Circuit. 18 ns Fall Time td(off) tf See specified Test Circuit. 19 ns Total Gate Charge Qg VDS=300V, VGS=10V, ID=1.5A 6.3 nC 1.4 nC 3.6 nC Rise Time Turn-OFF Delay Time ID=10mA, VGS=0V VDS=480V, VGS=0V V Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current 3.0 Gate-to-Source Charge Qgs Qgd VDS=300V, VGS=10V, ID=1.5A VDS=300V, VGS=10V, ID=1.5A Diode Forward Voltage VSD IS=1.5A, VGS=0V μA ±10 μA 5.0 6.2 Gate-to-Drain “Miller” Charge 100 0.85 V S 8.1 Ω 1.2 V Switching Time Test Circuit 10V 0V VDD=200V VIN ID=0.8A RL=250Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1440 50Ω S ID -- VDS V 15 Drain Current, ID -- A 1.6 1.6 7V 1.4 1.2 1.0 0.8 0.6 6V 0.4 25°C 1.4 75°C 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 VDS=10V 1.8 8V Drain Current, ID -- A 1.8 ID -- VGS 2.0 10 V 2.0 Tc= --2 5°C P.G VGS=5V 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT15875 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Gate-to-Source Voltage, VGS -- V IT15876 No. A1816-2/4 SFT1440 RDS(on) -- VGS 20 16 16 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=0.8A 14 12 10 8 6 4 2 4 6 8 10 12 14 16 18 20 22 24 26 Gate-to-Source Voltage, VGS -- V 4 2 3 2 --40 --20 0 20 40 60 80 100 120 140 160 IT15878 IS -- VSD VGS=0V C 5° --2 = Tc °C 75 2 0.1 7 5 3 0.1 7 5 3 2 0.01 7 5 --25° C 3 3 2 25°C °C 25 5 5°C 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 6 1.0 7 5 3 2 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A 0.001 0.2 5 7 1.0 2 IT15879 0.6 0.8 1.0 1.2 IT15880 Ciss, Coss, Crss -- VDS 7 5 VDD=200V VGS=10V 7 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 100 f=1MHz 3 2 Ciss, Coss, Crss -- pF 5 tf Switching Time, SW Time -- ns 8 Case Temperature, Tc -- °C 1.0 0.01 0.001 3 td (off) 2 tr td(on) 10 Ciss 100 7 5 Coss 3 2 10 7 5 Crss 3 7 2 5 0.1 2 3 5 7 2 1.0 Drain Current, ID -- A 10 7 5 Drain Current, ID -- A 12 10 8 6 4 2 3 4 5 10 6 Total Gate Charge, Qg -- nC 7 8 IT15895 15 20 25 30 35 40 45 50 IT15894 ASO IDP=6.0A (PW≤10μs) 10 ID=1.5A 1.0 7 5 DC 1m s 10 10 10 μs 0μ s m 0m op s s era tio 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 2 1 5 Drain-to-Source Voltage, VDS -- V 3 2 0 0 IT15893 VDS=300V ID=1.5A 14 0 1.0 3 VGS -- Qg 16 Gate-to-Source Voltage, VGS -- V 10 0 --60 30 VDS=10V 2 12 IT15877 | yfs | -- ID 3 28 14 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 18 2 RDS(on) -- Tc 18 Ta=25°C n( Ta =2 5° C ) Tc=25°C Single pulse 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 1000 IT15884 No. A1816-3/4 SFT1440 PD -- Ta 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 0 20 40 60 80 100 PD -- Tc 25 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 120 Ambient Temperature, Ta -- °C 140 160 IT15885 20 15 10 5 0 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT15886 Note on usage : Since the SFT1440 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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