ECH8420 Ordering number : EN8993 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=5.2mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 20 V ±12 V 14 A PW≤10μs, duty cycle≤1% 50 A When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 5 ZA 2.3 Lot No. 4 1 0.65 0.9 0.25 TL 0.3 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 t o 0.02 Bot t om View SANYO : ECH8 8 7 6 5 1 2 3 4 http://semicon.sanyo.com/en/network O1911PE TKIM TC-00002660 No.8993-1/4 ECH8420 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A 14.5 RDS(on)1 ID=7A, VGS=4.5V 5.2 6.8 mΩ RDS(on)2 ID=4A, VGS=2.5V 8 11.5 mΩ RDS(on)3 ID=2A, VGS=1.8V 15 22.5 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time min V(BR)DSS IDSS Input Capacitance Rise Time Ratings Conditions 20 V 0.4 1 μA ±10 μA 1.3 V S 2430 pF 410 pF Crss 330 pF td(on) tr 21 ns 88 ns 210 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. 115 ns 29 nC VDS=10V, VGS=4.5V, ID=14A IS=14A, VGS=0V 4.8 nC 8.7 nC 0.75 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=7A RL=1.43Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8420 50Ω 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16625 0.6 0.8 1.0 °C VGS=1.5V --2 5 4 ID -- VGS Ta= 75°C 6 21 20 VDS=10V 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 °C 10.0V 8 Drain Current, ID -- A Drain Current, ID -- A 10 2.5V 1.8V 8.0V 6.0V 4 .5V ID -- VDS 14 12 S 25 P.G 1.2 1.4 Gate-to-Source Voltage, VGS -- V 1.6 1.8 IT16531 No.8993-2/4 ECH8420 RDS(on) -- VGS ID=2A 4A 7A 25 20 15 10 5 0 0 2 4 6 8 10 25° 10 7 5 C C 5° -2 =- Ta 3 2 °C 75 1.0 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A SW Time -- ID 1000 td(off) 2 tf 7 tr 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 VGS -- Qg 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT16535 Ciss, Coss, Crss -- VDS f=1MHz 3 Ciss 2 1000 7 5 Coss 3 Crss 1.5 1.0 0.5 15 20 Total Gate Charge, Qg -- nC 25 30 IT16538 2 0 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A 2.0 10 0.1 7 5 3 2 100 7 5 3 2 2.5 5 1.0 7 5 3 2 100 5 7 100 IT16536 3.0 0 VGS=0V 5 3.5 0 200 IT16533 7 VDS=10V ID=14A 4.0 150 2 Drain Current, ID -- A 4.5 100 Diode Forward Voltage, VSD -- V td(on) 2 10 0.1 Gate-to-Source Voltage, VGS -- V 5 7 100 IT16534 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 50 IS -- VSD 10000 7 100 0 1.0 7 5 3 2 0.01 7 5 3 2 0.001 VDD=15V VGS=10V 3 5 100 7 5 3 2 3 2 0.1 0.01 A I =4 2.5V, D = S VG =7A 4.5V, I D V GS= 10 Ambient Temperature, Ta -- °C VDS=10V 3 2 15 IT16532 | yfs | -- ID 100 7 5 2A , I D= =1.8V S VG 0 --50 12 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 20 5°C 25° C --25 °C 30 Ta= 7 35 RDS(on) -- Ta 25 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 20 IT16537 ASO IDP=50A (PW≤10μs) 1m ID=14A s 10 10 7 5 3 2 DC ms 10 0m s op era tio n( 1.0 7 5 3 2 0.1 7 5 3 2 18 Operation in this area is limited by RDS(on). Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16539 No.8993-3/4 ECH8420 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16540 Note on usage : Since the ECH8420 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2011. Specifications and information herein are subject to change without notice. PS No.8993-4/4