ATP216 Ordering number : EN8985 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP216 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=17mΩ(typ.) 1.8V drive • • Slim package Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 50 PW≤10μs, duty cycle≤1% V 35 A 105 A 40 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 40 mJ 17.5 Avalanche Current *2 Tc=25°C V ±10 A Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 1.5 6.5 Packing Type: TL 0.4 0.4 0.5 4 4.6 2.6 Marking 4.6 6.05 LOT No. TL 9.5 7.3 ATP216 0.8 2.3 0.6 2.3 2,4 0.55 0.7 3 0.1 0.5 1 1.7 Electrical Connection 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 SANYO : ATPAK 3 http://semicon.sanyo.com/en/network 51111PA TKIM TC-00002591 No.8985-1/4 ATP216 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS min typ Unit max 50 ID=1mA, VGS=0V VDS=50V, VGS=0V V 1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=18A 58 RDS(on)1 RDS(on)2 ID=18A, VGS=4.5V ID=9A, VGS=2.5V 17 23 mΩ Static Drain-to-Source On-State Resistance 20 28 mΩ 45 mΩ 0.4 1.4 V S RDS(on)3 ID=5A, VGS=1.8V 30 Input Capacitance Ciss VDS=20V, f=1MHz 2700 pF Output Capacitance Coss VDS=20V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF Turn-ON Delay Time td(on) See specified Test Circuit. 27 ns Rise Time tr See specified Test Circuit. 90 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 220 ns Fall Time tf See specified Test Circuit. 105 ns Total Gate Charge Qg VDS=30V, VGS=4.5V, ID=35A 30 nC Gate-to-Source Charge Qgs nC Qgd VDS=30V, VGS=4.5V, ID=35A VDS=30V, VGS=4.5V, ID=35A 5.9 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=35A, VGS=0V 7.9 nC 0.96 1.2 V Switching Time Test Circuit 4.5V 0V VDD=30V VIN ID=18A RL=1.67Ω VIN D PW=10μs D.C.≤1% VOUT G ATP216 P.G 50Ω S ID -- VDS 35 V 4.5 3.0 40 10 1.8V 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 25 20 15 10 VGS=1.5V 0 30 Tc= 75° C Drain Current, ID -- A 2.0V 15 35 5 1.0 IT16430 0 0 0.5 1.0 --2 5°C 5V 3. 20 0 VDS=10V 45 25° C 6.0 25 8.0 V Drain Current, ID -- A V 2.5 V 30 ID -- VGS 50 V Tc=25°C 1.5 2.0 Gate-to-Source Voltage, VGS -- V 2.5 3.0 IT16431 No.8985-2/4 ATP216 RDS(on) -- VGS 9A 40 18A 30 20 10 0 0 1 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 7 2 = Tc -- °C 75 10 7 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A tf tr td(on) 3 2 10 7 5 0 20 40 60 80 100 120 140 160 IT16433 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16435 Ciss, Coss, Crss -- VDS 10000 7 5 f=1MHz Ciss 2 1000 7 5 3 2 Coss 100 7 5 Crss 3 3 2 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A VGS -- Qg 5 10 5 7 100 IT16436 1000 7 5 3 2 VDS=30V ID=35A Drain Current, ID -- A 3 2 1 0 5 10 15 20 Total Gate Charge, Qg -- nC 25 30 IT16438 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 4 0 --20 3 2 100 7 5 --40 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VDD=30V VGS=4.5V td(off) 3 1.0 0.1 Gate-to-Source Voltage, VGS -- V 5 7 100 IT16434 SW Time -- ID 1000 7 5 10 0.01 7 5 3 2 0.001 2 1.0 0.1 20 100 7 5 3 2 °C 25 3 30 Case Temperature, Tc -- °C °C 25 5 =5A V, I D 8 . 1 = VGS =9A V, I D 5 . =2 A V GS =18 , ID V 5 . =4 VGS 0 --60 8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S VDS=10V 40 IT16432 | yfs | -- ID 100 50 °C 25° C --25 °C ID=5A Tc= 75 50 RDS(on) -- Tc 60 Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 100 7 5 3 2 ASO IDP=105A (PW≤10μs) 10 ID=35A 10 0m 0μ s s 10 DC Operation in this area is limited by RDS(on). 10 μs 1m s 10 7 5 3 2 1.0 7 5 3 2 IT16437 ms op era tio n Tc=25°C Single pulse 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16439 No.8985-3/4 ATP216 PD -- Tc 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 EAS -- Ta 120 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 120 Case Temperature, Tc -- °C 140 160 IT16440 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT16441 Note on usage : Since the ATP216 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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