MCH6440 Ordering number : ENA1202A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6440 General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage *1 Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 55 V 10 V ID 0.6 A 2.4 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD Tch When mounted on ceramic substrate (2000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C *1 Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 55 V VDS=55V, VGS=0V 1 μA 1 μA IGSS VGS(off) VGS=8V, VDS=0V VDS=10V, ID=100μA 0.4 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=10V, ID=300mA 420 ID=300mA, VGS=4V 2.0 2.7 Ω Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=150mA, VGS=2.5V 2.1 3.0 Ω ID=10mA, VGS=1.5V 3.0 6.0 Ω Cutoff Voltage Marking : ZP 1.3 700 V mS Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60408 TI IM TC-00001426 / 42308PE TI IM TC-00001344 No. A1202-1/4 MCH6440 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ Unit max VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 30 pF 6.1 pF Reverse Transfer Capacitance Crss 3.9 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 4.1 ns See specified Test Circuit. 5.6 ns td(off) tf See specified Test Circuit. 8.6 ns Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge See specified Test Circuit. Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 8.4 ns VDS=30V, VGS=4V, ID=600mA VDS=30V, VGS=4V, ID=600mA 0.87 nC 0.12 nC VDS=30V, VGS=4V, ID=600mA IS=600mA, VGS=0V 0.37 Package Dimensions 0.25 6 4V 0V 0.15 4 ID=600mA RL=50Ω VOUT VIN D 2.1 1.6 0 to 0.02 PW=10μs D.C.≤1% 2 G 3 0.65 0.3 MCH6440 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 ID -- VDS ID -- VGS V VDS=10V 2.5 4.0V 6.0V 0.5 V 1.8 Drain Current, ID -- A 0.4 S 0.6 8.0 V 0.5 50Ω 0.3 1.5V 0.2 0.1 0.4 0.3 0.2 25° 75 C °C 0.07 0.85 P.G 0.1 Ta = VGS=1.2V --25 °C 0.25 1 0.6 Drain Current, ID -- A V VDD=30V VIN 5 1.2 Switching Time Test Circuit unit : mm (typ) 7022A-009 2.0 nC 0.94 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 IT13418 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V 3.0 IT13419 No. A1202-2/4 MCH6440 RDS(on) -- VGS 8 ID=0.01A 7 6 0.15A 5 0.3A 4 3 2 1 0 0 1 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 2 1 --40 --20 0 20 40 60 80 100 120 140 160 IT13421 IS -- VSD 1.0 7 5 VGS=0V 3 5 3 C 5° 2 =-Ta 2 75 0.1 °C 25 °C 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 2 --25°C 7 Ta= 75°C 25°C Source Current, IS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS 3 Ambient Temperature, Ta -- °C 1.0 0.01 0.001 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 IT13422 Drain Current, ID -- A 0 0.4 0.6 Ciss, Coss, Crss -- pF tf 2 td (off) 10 7 5 tr td(on) 3 1.2 IT13423 f=1MHz Ciss 3 3 1.0 5 2 100 7 5 0.8 Ciss, Coss, Crss -- VDS 7 VDD=30V VGS=4V 3 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 7 5 Switching Time, SW Time -- ns 1A =0.0 I D , V A =1.5 0.15 VGS I D= , V 5 =2. 0.3A VGS I D= , V 0 =4. V GS 4 IT13420 VDS=10V 2 5 0 --60 8 ⏐yfs⏐ -- ID 3 RDS(on) -- Ta 6 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 2 10 7 Coss 5 Crss 3 2 2 1.0 1.0 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 0 1.0 IT13424 3 Drain Current, ID -- A 2.5 2.0 1.5 1.0 1.0 7 5 20 25 30 35 40 45 50 55 60 IT13425 ASO IDP=2.4A PW≤10μs ID=0.6A 10 0 1m μs 10 s m s 0.5 2 0.2 0.3 0.4 0.5 0.6 Total Gate Charge, Qg -- nC 0.7 0.8 0.9 IT13426 10 op 0m s er ati on 0.1 7 5 2 0 DC 3 3 0.1 15 2 3.0 0 10 5 VDS=30V ID=600mA 3.5 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V 7 Operation in this area is limited by RDS(on). (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT13427 No. A1202-3/4 MCH6440 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (2000mm2✕0.8mm) 1.5 1.2 0.9 0.6 0.3 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13428 Note on usage : Since the MCH6440 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1202-4/4