CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V ID --1.5 A Drain Current (DC) Drain Current (Pulse) IDP PD PW≤10µs, duty cycle≤1% PD Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Power Dissipation Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --6.0 A 0.9 W 1.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V typ Unit max --20 V --1 µA VGS(off) yfs VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--0.8A RDS(on)1 RDS(on)2 ID=--0.8A, VGS=--4V ID=--0.4A, VGS=--2.5V 290 40 pF 25 pF Input Capacitance Ciss Output Capacitance Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz Marking : WH Ratings min ±10 µA --1.3 V 180 235 mΩ 240 340 mΩ --0.4 1.38 2.3 S pF Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60607PE TI IMTC-00000748 No. A0847-1/4 CPH6621 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 10 Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 32 ns tf Qg See specified Test Circuit. 27 ns VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4V, ID=--1.5A VDS=--10V, VGS=--4V, ID=--1.5A 0.8 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--1.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions ns 0.6 --0.87 nC --1.5 V Electrical Connection 5 4 1 2 3 0.15 2.9 6 6 5 4 0.05 1.6 2.8 0.2 0.6 unit : mm (typ) 7018A-010 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 2 0.95 3 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 0.4 0.9 0.2 0.6 Top view 1 SANYO : CPH6 Switching Time Test Circuit VIN VDD= --10V 0V --4V ID= --0.8A RL=12.5Ω VOUT VIN D PW=10µs D.C.≤1% G CPH6621 50Ω S ID -- VDS --0.8 --0.6 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 25° C --1.0 --1.2 °C VGS= --1.5V 5°C --1.2 --1.4 --25 --1.4 --1.6 --6.0 Drain Current, ID -- A --1.6 VDS= --10V --1.8 Drain Current, ID -- A --1.8 ID -- VGS --2.0 --3. 0 --2 V .5V --2 .0V V --4.0V --2.0 Ta= 7 P.G 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT02654 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT02655 No. A0847-2/4 CPH6621 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 500 400 300 ID= --0.4A 200 --0.8A 100 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 3 2 5°C --2 = Ta °C 75 7 5 °C 25 3 --40 --20 0 60 80 100 120 140 160 IT02657 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 0 3 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT02658 SW Time -- ID --1.4 IT02659 Ciss, Coss, Crss -- VDS 1000 VDD= --10V VGS= --4V 7 40 VGS=0V 2 100 20 IS -- VSD 3 2 Drain Current, ID -- A f=1MHz 7 5 td(off) 3 tf 2 tr td(on) Ciss 3 Ciss, Coss, Crss -- pF 5 2 100 7 5 Coss 7 3 Crss 5 2 10 3 10 3 5 7 2 --0.1 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 0 --10 --5 --15 Drain-to-Source Voltage, VDS -- V IT02660 VGS -- Qg --4 --10 7 5 VDS= --10V ID= --1.5A PW≤10µs 10 0 1m µ s s 3 2 2.5 Total Gate Charge, Qg -- nC 3 3.5 IT04051 Operation in this area is limited by RDS(on). --0.1 7 5 ) °C 2 25 a= (T 1.5 n 1 s 0.5 io at 0 er 2 2 s 0m 3 3 0 m 10 --1 10 --1.0 7 5 op --2 ID= --1.5A C Drain Current, ID -- A --3 --20 IT02661 ASO IDP= --6.0A D Gate-to-Source Voltage, VGS -- V 100 --10 7 5 5 1.0 200 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 7 .5V = --2 VGS , A --0.4 --4.0V I D= S= V G , A 0.8 I D= -- 300 IT02656 VDS= --10V 0.1 --0.01 Switching Time, SW Time -- ns --10 yfs -- ID 10 400 0 --60 0 0 RDS(on) -- Ta 500 Ta=7 5°C 25°C --25°C 600 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT12454 No. A0847-3/4 CPH6621 PD -- Ta Allowable Power Dissipation, PD -- W 1.4 Mounted on a ceramic board(900mm2✕0.8mm)1unit 1.2 1.0 0.9 To t 0.8 al Di ss 1u 0.6 nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12455 Note on usage : Since the CPH6621 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0847-4/4