S9014 NPN Silicon Pre-Amplifier, Low Level & Low Noise Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 1 PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage 2 Base 2 A Emitter L V(BR)CBO : 50 V 3 1 Tj, Tstg : - 55 C ~ + 150 C O B S Top View Operating & storage junction temperature 2 O V G H Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm C D Dim J K ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O Symbol Parameter Test conditions MIN TYP MAX UNIT 50 V Ic= 0.1mA， IB=0 45 V V(BR)EBO IE=100μA， IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 μA Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage hFE DC current gain VCE=5V, IE=0 IC= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V fT Transition frequency CLASSIFICATION OF VCE=5V, f=30MHz IC= 10mA 150 MHz hFE(1) Rank Range L H 200-450 450-1000 DEVICE MARKING: S9014 =J6 http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 S9014 NPN Silicon Low Frequency, Low Noise Amplifier Elektronische Bauelemente Typical Characteristics 100 1000 VCE = 5V IB = 160µA IB = 140µA IB = 120µA 80 70 hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT 90 IB = 100µA 60 IB = 80µA 50 IB = 60µA 40 IB = 40µA 30 20 IB = 20µA 100 10 0 10 0 10 20 30 40 50 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE (sat) 100 VCE (sat) IC = 20 IB 10 100 IC [mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE Figure 2. DC current Gain 1000 10 1000 IC [mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 100 1000 VCE = 5V 100 10 1 10 100 1000 IC [mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2