SS8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A Collector-base voltage 1 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature O 1 O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN TYP MAX UNIT 40 V Ic= 0.1mA， IB=0 25 V IE=100μA， IC=0 5 V IE=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=20V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA HFE(1) VCE=1V, IC= 100m A 85 HFE(2) VCE=1V, IC= 800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80m A 0.5 V Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80m A 1.2 V IC=0 400 DC current gain VCE=10V, IC= 50mA fT Transition frequency 100 MHz f=30MHz CLASSIFICATION OF h FE(1) Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A B C D E 85-160 120-200 160-300 300-400 Any changing of specification will not be informed individual Page 1 of 2 SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor Typical Characteristics 0.5 1000 0.4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 1V IB = 3.0mA IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 IC = 10 IB VCE = 1V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 VBE(sat) 1000 100 VCE(sat) 10 0.1 1 10 100 10 1 0.1 0.0 1000 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 100 10 1 1 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance http://www.SeCoSGmbH.com 1000 Figure 2. DC current Gain IC[mA], COLLECTOR CURRENT Cob [pF], CAPACITANCE 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 01-Jun-2002 Rev. A 10 100 VCE = 10V 100 10 1 1 10 100 400 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2