FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • 100kHz Operation at 390V, 14A • • • • • • Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ • Low Conduction Loss IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390 Package Symbol C JEDEC STYLE TO-247 E JEDEC STYLE TO-220AB C G E C JEDEC STYLE TO-263AB G C G G E E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES Parameter Collector to Emitter Breakdown Voltage Ratings 600 Units V IC25 Collector Current Continuous, TC = 25°C 45 A IC110 Collector Current Continuous, TC = 110°C 20 A ICM Collector Current Pulsed (Note 1) 108 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 60A at 600V EAS Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V 150 PD Power Dissipation Total TC = 25°C 167 W Power Dissipation Derating TC > 25°C 1.33 W/°C TJ TSTG mJ Operating Junction Temperature Range -55 to 150 °C Storage Junction Temperature Range -55 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D July 2001 Device Marking 30N6S2D 30N6S2D 30N6S2D Device FGB30N6S2D FGP30N6S2D FGH30N6S2D Package TO-263AB TO-220AB TO-247 Tape Width 24mm - Quantity 800 - Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units IC = 250µA, VGE = 0 VCE = 600V TJ = 25°C TJ = 125°C VGE = ± 20V 600 - - 250 2 ±250 V µA mA nA - 1.95 1.8 2.1 2.5 2.0 2.5 V V V 3.5 - 23 26 4.3 6.5 29 33 5.0 8.0 nC nC V V 60 - - A - 6 10 40 53 55 110 100 11 17 73 90 55 160 250 35 25 150 100 100 200 350 46 32 ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ ns ns - - 0.75 2.0 °C/W °C/W Off State Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current On State Characteristics VCE(SAT) VEC Collector to Emitter Saturation Voltage IC = 12A, VGE = 15V Diode Forward Voltage IEC = 12A TJ = 25°C TJ = 125°C Dynamic Characteristics QG(ON) Gate Charge VGE(TH) VGEP Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 12A, VCE = 300V VGE = 15V VGE = 20V IC = 250µA, VCE = 600V IC = 12A, VCE = 300V Switching Characteristics SSOA Switching SOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF trr Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Reverse Recovery Time TJ = 150°C, RG = 10Ω, VGE = 15V, L = 100µH, VCE = 600V IGBT and Diode at TJ = 25°C, ICE =12A, VCE = 390V, VGE = 15V, RG =10Ω L = 500µH Test Circuit - Figure 26 IGBT and Diode at TJ = 125°C ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω L = 500µH Test Circuit - Figure 26 IEC = 12A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs Thermal Characteristics RθJC Thermal Resistance Junction-Case IGBT Diode NOTE: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. ©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Package Marking and Ordering Information 40 30 20 10 0 50 75 100 125 150 70 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100mH 60 50 40 30 20 10 0 0 100 200 TC , CASE TEMPERATURE (oC) fMAX, OPERATING FREQUENCY (kHz) 1000 TC 75oC VGE = 15V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.49oC/W, SEE NOTES TJ = 125oC, RG = 3Ω, L = 200mH, V CE = 390V 10 20 10 1 30 350 VCE = 390V, RG = 10Ω, TJ = 125oC 10 300 8 250 DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250ms 14 12 10 8 6 TJ = 125oC 4 0 0.50 TJ = 25oC 0.75 1.00 1.25 1.50 1.75 2.00 2.25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage ©2001 Fairchild Semiconductor Corporation ISC tSC 6 200 4 150 2 100 9 10 11 12 13 14 15 16 Figure 4. Short Circuit Withstand Time ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 18 2 700 600 VGE , GATE TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Emitter Current TJ = 150oC 500 12 ICE, COLLECTOR TO EMITTER CURRENT (A) 16 400 Figure 2. Minimum Switching Safe Operating Area tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Figure 1. DC Collector Current vs Case Temperature VGE = 10V 300 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ISC, PEAK SHORT CIRCUIT CURRENT (A) 25 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 50 18 DUTY CYCLE < 0.5%, VGE =15V PULSE DURATION = 250ms 16 14 12 10 8 6 TJ = 150oC TJ = 125oC 4 TJ = 25oC 2 0 .5 .75 1 1.25 1.50 1.75 2.0 2.25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Typical Performance Curves 600 EOFF TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 400 RG = 10Ω, L = 500mH, VCE = 390V 350 300 TJ = 125oC, VGE = 10V, VGE = 15V 250 200 150 100 TJ = 25oC, VGE = 10V, VGE = 15V 50 0 0 5 10 15 20 RG = 10Ω, L = 500mH, VCE = 390V 500 400 TJ = 125oC, VGE = 10V, VGE = 15V 300 200 100 TJ = 25oC, VGE = 10V, VGE = 15V 0 25 0 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 7. Turn-On Energy Loss vs Collector to Emitter Current 15 20 25 30 RG = 10Ω, L = 500µH, VCE = 390V RG = 10Ω, L = 500mH, VCE = 390V 14 25 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 10 Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 16 12 10 TJ = 25oC, TJ = 125oC, VGE = 10V 8 6 20 TJ = 125oC, VGE = 15V, VGE = 10V 15 10 TJ = 25oC, VGE = 10V, VGE =15V 4 TJ = 25oC, TJ = 125oC, VGE = 15V 5 2 0 0 5 10 15 20 0 25 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. Turn-On Delay Time vs Collector to Emitter Current Figure 10. Turn-On Rise Time vs Collector to Emitter Current 90 120 RG = 10Ω, L = 500µH, VCE = 390V RG = 10Ω, L = 500µH, VCE = 390V 80 tfI , FALL TIME (ns) td(OFF) TURN-OFF DELAY TIME (ns) 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 70 60 50 40 100 TJ = 125oC, VGE = 10V OR 15V 80 60 30 TJ = 25oC, VGE = 10V OR 15V 20 40 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2001 Fairchild Semiconductor Corporation 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 12. Fall Time vs Collector to Emitter Current FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Typical Performance Curves (Continued) DUTY CYCLE < 0.5%, VCE = 10V VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 16 175 PULSE DURATION = 250µs 150 125 o TJ = 25 C 100 75 50 TJ = 125oC 25 o TJ = -55 C 12 VCE = 600V 10 8 6 VCE = 400V 4 VCE = 200V 2 0 6 5 8 7 10 9 11 12 13 14 15 IG(REF) = 1mA, RL = 25Ω, TJ = 25oC 14 0 16 0 2 4 6 8 1.2 RG = 10Ω, L = 500mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 24A 0.8 0.6 0.4 ICE = 12A 0.2 ICE = 6A 0 25 50 75 100 150 125 o C, CAPACITANCE (nF) 1.2 1.0 0.8 CIES 0.6 COES 0.2 CRES 20 30 40 50 60 70 80 90 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 17. Capacitance vs Collector to Emitter Voltage ©2001 Fairchild Semiconductor Corporation VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz 10 18 20 22 24 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 24A 1 ICE = 12A ICE = 6A 0.1 1.0 10 100 1000 Figure 16. Total Switching Loss vs Gate Resistance 1.4 0 16 RG, GATE RESISTANCE (Ω) Figure 15. Total Switching Loss vs Case Temperature 0.0 14 10 TC , CASE TEMPERATURE ( C) 0.4 12 Figure 14. Gate Charge ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 13. Transfer Characteristic 1.0 10 QG , GATE CHARGE (nC) VGE , GATE TO EMITTER VOLTAGE (V) 3.5 DUTY CYCLE < 0.5% PULSE DURATION = 250µs, TJ = 25oC 3.0 2.5 ICE = 24A ICE = 12A 2.0 ICE = 6A 1.5 6 7 8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Typical Performance Curves (Continued) 200 24 trr, REVERSE RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) DUTY CYCLE < 0.5%, PULSE DURATION = 250µs 20 16 125oC 25oC 12 8 4 0 150 125oC tb 125 25oC trr 100 75 25oC tb 50 125oC ta 25 25oC ta 0 0.5 0 1.0 1.5 2.5 2.0 2 3.0 4 6 Figure 19. Diode Forward Current vs Forward Voltage Drop 125oC tb 125 100 o 25 C tb 50 125oC ta 25 25oC ta 0 200 300 400 500 600 700 800 900 1000 VCE = 390V 200 125oC, IEC = 6A 150 25oC, IEC = 12A 100 25oC, IEC = 6A 50 0 200 300 VCE = 390V, TJ = 125°C 6.5 6.0 IEC = 12A 5.5 5.0 4.5 IEC = 6A 3.5 400 500 600 700 800 900 1000 dI EC/dt, CURRENT RATE OF CHANGE (A/µs) Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current ©2001 Fairchild Semiconductor Corporation 500 600 700 800 900 1000 Figure 22. Stored Charge vs Rate of Change of Current IRRM, MAX REVERSE RECOVERY CURRENT (A) 7.0 300 400 dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) Figure 21. Recovery Times vs Rate of Change of Current 3.0 200 125oC, IEC = 12A 250 dIEC/dt, RATE OF CHANGE OF CURRENT (A/ms) 4.0 12 Figure 20. Recovery Times vs Forward Current Qrr , REVERSE RECOVERY CHARGE (nC) trr , REVERSE RECOVERY TIMES (ns) IEC = 12A, VCE = 390V 75 10 300 175 150 8 IEC , FORWARD CURRENT (A) VEC , FORWARD VOLTAGE (V) S, REVERSE RECOVERY SOFTNESS FACTOR 125oC trr dIEC/dt = 200A/µs, VCE = 390V 175 10 VCE = 390V, TJ = 125°C IEC = 12A 9 8 IEC = 6A 7 6 5 4 3 200 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/µs) Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Typical Performance Curves (Continued) ZqJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 t1 0.10 PD 10-1 t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms FGH30N6S2D DIODE TA49390 90% 10% VGE EON2 EOFF L = 500µH VCE RG = 10Ω 90% + FGH30N6S2D ICE VDD = 390V - 10% td(OFF)I tfI trI td(ON)I Figure 26. Inductive Switching Test Circuit ©2001 Fairchild Semiconductor Corporation Figure 27. Switching Test Waveforms FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Typical Performance Curves (Continued) Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/ 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0) ECCOSORBD is a Trademark of Emerson and Cumming, Inc. ©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D Handling Precautions for IGBTs 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E TERM. 4 ØS ØP MAX MIN MAX A 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - b1 E 0.605 0.625 15.37 15.87 b2 e ØR D L c e1 b 1 2 MILLIMETERS MIN Q L1 INCHES SYMBOL 3 e e1 3 J1 0.219 TYP 0.438 BSC NOTES - 5.56 TYP 4 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 1 L 0.620 0.640 15.75 16.25 - BACK VIEW L1 0.145 0.155 3.69 3.93 1 2 5 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. ©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D TO-247 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE INCHES A E ØP A1 Q H1 TERM. 4 D 45o E1 D1 L1 b1 L b c 60o 1 2 3 e e1 J1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 14.99 15.49 - 4.06 - D 0.590 0.610 D1 - 0.160 E 0.395 0.410 E1 - 0.030 10.04 - 10.41 - 0.76 - e 0.100 TYP 2.54 TYP 5 e1 0.200 BSC 5.08 BSC 5 H1 0.235 0.255 5.97 6.47 - J1 0.100 0.110 2.54 2.79 6 L 0.530 0.550 13.47 13.97 - L1 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 7-97. ©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D TO-220AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE E A INCHES A1 H1 MIN MAX MIN MAX A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 4, 5 TERM. 4 D L2 L1 L 1 3 b1 b e c J1 e1 0.450 (11.43) TERM. 4 L3 0.350 (8.89) b2 3 0.700 (17.78) 0.150 (3.81) 1 0.080 TYP (2.03) 0.062 TYP (1.58) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS 1.5mm DIA. HOLE MILLIMETERS SYMBOL NOTES b 0.030 0.034 0.77 0.86 4, 5 b1 0.045 0.055 1.15 1.39 4, 5 b2 0.310 - 7.88 - 2 c 0.018 0.022 0.46 0.55 4, 5 D 0.405 0.425 10.29 10.79 - E 0.395 0.405 10.04 10.28 - e 0.100 TYP 2.54 TYP 7 e1 0.200 BSC 5.08 BSC 7 H1 0.045 0.055 1.15 1.39 - J1 0.095 0.105 2.42 2.66 - L 0.175 0.195 4.45 4.95 - L1 0.090 0.110 2.29 2.79 4, 6 L2 0.050 0.070 1.27 1.77 3 L3 0.315 - 8.01 - 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 10 dated 5-99. 4.0mm USER DIRECTION OF FEED 2.0mm TO263AB 1.75mm CL 24mm TAPE AND REEL 24mm 16mm COVER TAPE 40mm MIN. ACCESS HOLE 30.4mm 13mm 330mm GENERAL INFORMATION 100mm 24.4mm 1. 800 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. ©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A FGH30N6S2D / FGP30N6S2D / FGB30N6S2D TO-263AB TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ Ensigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optpelectronics™ Quiet Series™ SILENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3