HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at TC = 25oC The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Ordering Information PART NUMBER PACKAGE BRAND HGTD3N60C3 TO-251AA G3N60C HGTD3N60C3S TO-252AA G3N60C Formerly developmental type TA49113. NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in Tape and Reel, i.e. HGTD3N60C3S9A. Symbol N-CHANNEL ENHANCEMENT MODE C G E Packaging JEDEC TO-251AA EMITTER JEDEC TO-252AA COLLECTOR GATE GATE COLLECTOR (FLANGE) EMITTER COLLECTOR (FLANGE) HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1997 1 File Number 4139.3 HGTD3N60C3, HGTD3N60C3S Absolute Maximum Ratings TC = 25oC HGTD3N60C3 HGTD3N60C3S UNITS 600 V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 3 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 24 A Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 33 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG 100 mJ -40 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 82Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - V Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - Emitter to Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V Collector to Emitter Leakage Current ICES VCE = BVCES Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE IGES VGE = ±25V SSOA TJ = 150oC RG = 82Ω VGE = 15V L = 1mH Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VGEP Qg(ON) td(ON)I trI td(OFF)I 16 30 - V TC = 25oC - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC TC = 150oC TC = 25oC - 1.65 2.0 V - 1.85 2.2 V 3.0 5.5 6.0 V - - ±250 nA VCE(PK) = 480V 18 - - A VCE(PK) = 600V 2 - - A IC = IC110, VCE = 0.5 BVCES - 8.3 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 10.8 13.5 nC VGE = 20V o TJ = 150 C ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82Ω - 13.8 17.3 nC - 5 - ns - 10 - ns - 325 400 ns - 130 275 ns - µJ Current Fall Time tfI Turn-On Energy EON - 85 Turn-Off Energy (Note 3) EOFF - 245 - µJ Thermal Resistance RθJC - - 3.75 oC/W L = 1mH NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 2 HGTD3N60C3, HGTD3N60C3S ICE, COLLECTOR TO EMITTER CURRENT (A) 20 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 18 16 14 12 10 8 TC = 150oC 6 TC = 25oC TC = -40oC 4 2 0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC 20 VGE = 15V 18 16 14 10V 12 10 8 9.0V 6 8.5V 4 8.0V 7.5V 2 7.0V 0 14 0 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 18 16 14 12 10 TC = -40oC 8 TC = 150oC 6 TC = 25oC 4 2 0 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 ICE , DC COLLECTOR CURRENT (A) VGE = 15V 6 5 4 3 2 1 0 25 50 75 100 125 10 20 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 18 TC = -40oC 16 14 TC = 25oC 12 10 TC = 150oC 8 6 4 2 0 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (µS) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE 7 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS 20 12V 150 14 12 60 50 10 tSC 8 40 ISC 6 30 4 20 2 10 0 10 TC , CASE TEMPERATURE (oC) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 70 VCE = 360V, RGE = 82Ω, TJ = 125oC 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3 0 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTD3N60C3, HGTD3N60C3S Typical Performance Curves 500 20 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) (Continued) VGE = 10V 10 VGE = 15V 3 2 5 6 7 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 300 VGE = 15V VGE = 10V 8 1 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 80 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 300 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V VGE = 10V tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 400 200 1 VGE = 15V 10 5 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 0.5 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 0.8 EOFF , TURN-OFF ENERGY LOSS (mJ) 0.4 VGE = 10V 0.3 0.2 VGE = 15V 0.1 0 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 10V OR 15V 1 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V 1 200 100 8 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT EON , TURN-ON ENERGY LOSS (mJ) TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V 0.7 0.6 VGE = 10V or 15V 0.5 0.4 0.3 0.2 0.1 0 8 1 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 4 8 HGTD3N60C3, HGTD3N60C3S TJ = 150oC, TC = 75oC RG = 82Ω, L = 1mH 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) VGE = 15V PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) VGE = 10V RθJC = 3.75oC/W 10 1 2 3 4 5 6 20 TJ = 150oC, VGE = 15V, RG = 82Ω, L = 1mH 18 16 14 12 10 8 6 4 2 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FREQUENCY = 1MHz C, CAPACITANCE (pF) 400 CIES 300 200 COES 100 CRES 0 0 5 10 15 20 25 300 400 500 600 IG REF = 1.060mA, RL = 200Ω, TC = 25oC 600 15 12 480 9 360 VCE = 600V VCE = 400V 240 FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR TO EMITTER VOLTAGE 6 VCE = 200V 120 3 0 0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE 200 FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 500 100 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) 2 4 6 8 10 Qg , GATE CHARGE (nC) 12 14 FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 10-1 t1 0.1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 5 101 VGE, GATE TO EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 200 (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTD3N60C3, HGTD3N60C3S Test Circuit and Waveform L = 1mH 90% RHRD460 10% VGE EOFF RG = 82Ω EON VCE + - 90% VDD = 480V ICE 10% td(OFF)I trI tfI FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT td(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken: Operating Frequency Information for a Typical Device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. td(OFF)I is important when controlling output ripple under a lightly loaded condition. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBD is a Trademark of Emerson and Cumming, Inc. 6 HGTD3N60C3, HGTD3N60C3S TO-251AA 3 LEAD JEDEC TO-251AA PLASTIC PACKAGE E b2 H1 INCHES A MIN MAX MIN MAX TERM. 4 A 0.086 0.094 2.19 2.38 - SEATING PLANE A1 0.018 0.022 0.46 0.55 3, 4 A1 D b1 L1 L c b 1 2 3 J1 e e1 LEAD 1 - GATE LEAD 2 - COLLECTOR LEAD 3 - EMITTER TERM. 4 - COLLECTOR MILLIMETERS SYMBOL NOTES b 0.028 0.032 0.72 0.81 3, 4 b1 0.033 0.040 0.84 1.01 3 b2 0.205 0.215 5.21 5.46 3, 4 c 0.018 0.022 0.46 0.55 3, 4 D 0.270 0.290 6.86 7.36 - E 0.250 0.265 6.35 6.73 - e 0.090 TYP 2.28 TYP 5 e1 0.180 BSC 4.57 BSC 5 H1 0.035 0.045 0.89 1.14 - J1 0.040 0.045 1.02 1.14 6 L 0.355 0.375 9.02 9.52 - L1 0.075 0.090 1.91 2.28 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-251AA outline dated 9-88. 2. Solder finish uncontrolled in this area. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 10-95. 7 HGTD3N60C3, HGTD3N60C3S TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE INCHES A E A1 b2 H1 SEATING PLANE D L2 1 L 3 b1 b e e1 b3 L3 0.086 0.094 2.19 2.38 - 0.018 0.022 0.46 0.55 4, 5 b 0.028 0.032 0.72 0.81 4, 5 b1 0.033 0.040 0.84 1.01 4 b2 0.205 0.215 5.21 5.46 4, 5 b3 0.190 - 4.83 - 2 0.022 0.46 0.55 4, 5 6.86 7.36 - c E 0.250 0.265 6.35 6.73 J1 e e1 0.090 TYP 0.180 BSC - 2.28 TYP 7 4.57 BSC 7 H1 0.035 0.045 0.89 1.14 - J1 0.040 0.045 1.02 1.14 - L 0.100 0.115 2.54 2.92 - L1 0.020 - 0.51 - 4, 6 L2 0.025 0.040 0.64 1.01 3 L3 0.170 - 4.32 - 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-252AA outline dated 9-88. 2. L3 and b3 dimensions establish a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 6 dated 10-96. 0.063 (1.6) 0.090 (2.3) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS - GATE - EMITTER A A1 0.290 0.090 (2.3) - COLLECTOR NOTES 0.018 0.118 (3.0) TERM. 4 MAX 0.270 BACK VIEW LEAD 3 MIN c 0.070 (1.8) LEAD 1 MAX D 0.265 (6.7) 0.063 (1.6) MIN L1 0.265 (6.7) TERM. 4 MILLIMETERS SYMBOL 8 HGTD3N60C3, HGTD3N60C3S TO-252AA 16mm TAPE AND REEL 22.4mm 4.0mm 1.5mm DIA. HOLE 2.0mm 13mm 1.75mm C L 16mm 330mm 50mm 8.0mm 16.4mm USER DIRECTION OF FEED COVER TAPE GENERAL INFORMATION 1. USE "9A" SUFFIX ON PART NUMBER. 2. 2500 PIECES PER REEL. 3. ORDER IN MULTIPLES OF FULL REELS ONLY. 4. MEETS EIA-481 REVISION "A" SPECIFICATIONS. Revision 6 dated 10-96 All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. 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