INTERSIL HGTP12N60A4

HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S
Data Sheet
May 1999
File Number
600V, SMPS Series N-Channel IGBT
Features
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
• >100kHz Operation at 390V, 12A
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
• Temperature Compensating SABER Model
http://www.intersil.com
Formerly Developmental Type TA49335.
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
Ordering Information
PART NUMBER
4656.2
JEDEC TO-220AB ALTERNATE VERSION
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S
TO-263AB
12N60A4
E
C
G
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix
9A to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4S9A
JEDEC TO-263AB
Symbol
C
COLLECTOR
(FLANGE)
G
E
G
JEDEC STYLE TO-247
E
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4SSP
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S
600
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . TPKG
UNITS
V
54
23
96
±20
±30
60A at 600V
167
1.33
-55 to 150
A
A
A
V
V
W
W/oC
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
TJ = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
10
-
-
V
-
-
250
µA
Collector to Emitter Leakage Current
ICES
VCE = 600V
VCE(SAT)
IC = 12A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
-
-
2.0
mA
-
2.0
2.7
V
-
1.6
2.0
V
IC = 250µA, VCE = 600V
-
5.6
-
V
IGES
VGE = ±20V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150oC, RG = 10Ω, VGE = 15V
L = 100µH, VCE = 600V
60
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 12A, VCE = 300V
-
8
-
V
IC = 12A,
VCE = 300V
VGE = 15V
-
78
96
nC
VGE = 20V
-
97
120
nC
-
17
-
ns
-
8
-
ns
-
96
-
ns
-
18
-
ns
-
55
-
µJ
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
On-State Gate Charge
VGE(TH)
Qg(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 25oC
ICE = 12A
VCE = 390V
VGE =15V
RG = 10Ω
L = 500µH
Test Circuit - (Figure 20)
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
160
-
µJ
Turn-Off Energy (Note 2)
EOFF
-
50
-
µJ
2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4SPD
TJ = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
IGBT and Diode at TJ = 125oC
ICE = 12A
VCE = 390V
VGE = 15V
RG = 10Ω
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
TEST CONDITIONS
tfI
L = 500µH
Test Circuit - (Figure 20)
MIN
TYP
MAX
UNITS
-
17
-
ns
-
16
-
ns
-
110
170
ns
-
70
95
ns
-
55
-
µJ
µJ
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
250
350
Turn-Off Energy (Note 2)
EOFF
-
175
285
µJ
0.75
oC/W
Thermal Resistance Junction To Case
RθJC
-
-
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Unless Otherwise Specified
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
70
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH
60
50
40
30
20
10
0
0
TC , CASE TEMPERATURE (oC)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
fMAX, OPERATING FREQUENCY (kHz)
500
TC
300
75oC
100
VGE
15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
TJ = 125oC, RG = 10Ω, L = 500µH, V CE = 390V
10
1
3
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
30
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
700
100
200
300
400
500
600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
300
VCE = 390V, RG = 10Ω, TJ = 125oC
18
275
250
16
14
225
ISC
12
200
10
175
8
150
6
125
tSC
4
100
2
75
0
9
10
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
50
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
1.5
2
0.5
1.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
2.5
TJ = 125oC, VGE = 12V, VGE = 15V
400
300
200
TJ = 25oC, VGE = 12V, VGE = 15V
0
4
2
6
8
10 12 14 16 18 20 22
ICE , COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0
0.5
1.0
1.5
2
2.5
RG = 10Ω, L = 500µH, VCE = 390V
350
300
TJ = 125oC, VGE = 12V OR 15V
250
200
150
100
50
0
TJ = 25oC, VGE = 12V OR 15V
2
4
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
32
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
28
17
16
TJ = 25oC, TJ = 125oC, VGE = 12V
15
14
13
24
TJ = 125oC, OR TJ = 25oC, VGE = 12V
20
16
12
8
12
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC OR TJ = 125oC, VGE = 15V
4
11
10
16
24
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
18
20
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
600
100
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
400
RG = 10Ω, L = 500µH, VCE = 390V
500
24
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
ICE, COLLECTOR TO EMITTER CURRENT (A)
Unless Otherwise Specified (Continued)
trI , RISE TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
0
2
4
6
8
10
12
14
16
18
20
22
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
24
2
4
6
8
10
12
14
16
18
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
22
24
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Unless Otherwise Specified (Continued)
115
90
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
80
110
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
Typical Performance Curves
105
100
95
VGE = 12V, VGE = 15V, TJ = 25oC
70
TJ = 125oC, VGE = 12V OR 15V
60
50
40
30
TJ = 25oC, VGE = 12V OR 15V
90
20
85
2
4
6
8
10
12
14
16
18
20
22
10
24
2
4
6
250
16
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
TJ = 25oC
TJ = -55oC
150
TJ = 125oC
100
50
0
6
7
8
11
14
9
10
12
13
VGE, GATE TO EMITTER VOLTAGE (V)
15
ICE = 24A
0.6
0.4
ICE = 12A
0.2
ICE = 6A
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
5
18
20
22
24
IG(REF) = 1mA, RL = 25Ω, TC = 25oC
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
0
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL = EON2 + EOFF
50
16
10
20
30
40
50
60
QG , GATE CHARGE (nC)
70
80
FIGURE 14. GATE CHARGE WAVEFORMS
0.8
0
25
14
0
16
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
1.0
12
14
FIGURE 13. TRANSFER CHARACTERISTIC
1.2
10
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
8
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
5
10
100
1000
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
3.0
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
COES
0.5
CRES
0
0
5
10
15
20
25
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8
9
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
11
10
13
12
14
15
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
0.1
10-1
t1
0.05
PD
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP660
90%
10%
VGE
EON2
EOFF
L = 500µH
VCE
RG = 10Ω
90%
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
6
16
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 21. SWITCHING TEST WAVEFORMS
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by PC = (VCE x
ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss (ICE x
VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E
A
A1
H1
TERM. 4
D
L2
L1
L
1
3
b
b1
e
c
J1
e1
0.450
(11.43)
TERM. 4
L3
0.350
(8.89)
b2
0.700
(17.78)
3
0.150
(3.81)
1
0.080 TYP (2.03)
0.062 TYP (1.58)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
1.5mm
DIA. HOLE
INCHES
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
A1
0.048
0.052
1.22
1.32
4, 5
b
0.030
0.034
0.77
0.86
4, 5
b1
0.045
0.055
1.15
1.39
4, 5
b2
0.310
7.88
2
c
0.018
0.022
0.46
0.55
4, 5
D
0.405
0.425
10.29
10.79
E
0.395
0.405
10.04
10.28
e
0.100 TYP
2.54 TYP
7
e1
0.200 BSC
5.08 BSC
7
H1
0.045
0.055
1.15
1.39
J1
0.095
0.105
2.42
2.66
L
0.175
0.195
4.45
4.95
L1
0.090
0.110
2.29
2.79
4, 6
L2
0.050
0.070
1.27
1.77
3
L3
0.315
8.01
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 11 dated 5-99.
4.0mm
USER DIRECTION OF FEED
2.0mm
TO-263AB
1.75mm
C
L
24mm TAPE AND REEL
24mm
16mm
COVER TAPE
40mm MIN.
ACCESS HOLE
30.4mm
13mm
330mm
100mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
8
24.4mm
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
E
SYMBOL
ØP
Q
ØR
D
L1
b1
c
2
1
3
3
J1
e
e1
LEAD 1
- GATE
LEAD 2
- COLLECTOR
LEAD 3
- EMITTER
TERM. 4
- COLLECTOR
9
MAX
MILLIMETERS
MIN
MAX
NOTES
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
e1
b
MIN
A
e
b2
L
INCHES
TERM. 4
ØS
0.219 TYP
0.438 BSC
-
5.56 TYP
4
11.12 BSC
4
J1
0.090
0.105
2.29
2.66
1
L
0.620
0.640
15.75
16.25
-
BACK VIEW
L1
0.145
0.155
3.69
3.93
1
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
2
5
ØR
0.195
0.205
4.96
5.20
-
ØS
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
TO-220AB (Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A
E
ØP
INCHES
A1
Q
H1
TERM. 4
D
L1
b1
c
2
3
J1
e
e1
MIN
MAX
NOTES
0.170
0.180
4.32
4.57
-
0.048
0.052
1.22
1.32
2, 4
b
0.030
0.034
0.77
0.86
2, 4
b1
0.045
0.055
1.15
1.39
2, 4
c
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
H1
1
MILLIMETERS
MAX
A
e1
60o
MIN
A1
e
b
L
SYMBOL
0.100 TYP
0.200 BSC
0.235
0.255
-
2.54 TYP
5
5.08 BSC
5
5.97
6.47
-
J1
0.095
0.105
2.42
2.66
6
L
0.530
0.550
13.47
13.97
-
L1
0.110
0.130
2.80
3.30
3
ØP
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from
bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from
bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 3 dated 7-97.
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