APOLLOELECTRON BTB16-600

TF16A60
Standard Triac
Symbol
○
TO-220F
VDRM = 600V
2.T2
IT(RMS) = 16 A
▼▲
○
3.Gate
ITSM = 168A
1.T1 ○
1
2
3
Features
Repetitive Peakk Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 16 A )
◆ High Commutation dv/dt
◆
◆
General Description
This device is fully isolated p ackage suitable for AC sw itching app lication, phase control application
such as IDQ spe ed and tem perature modulation con trol, in dustrial a nd domestic lighting co ntrol an d
static switching relay.
This device may substitute for BTA16-600, BTB16-600, BT139-600, BCR16PM-12, TM1661M/S-L series.
Absolute Maximum Ratings
Symbol
VDRM
( Tj = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz
600
IT(RMS)
R.M.S On-State Current
Tj = 125 °C, Full Sine wave
16
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
Units
V
A
160/168
A
tp =10ms
128
A 2s
Average Gate Power Dissipation
Tj=125°C
1
W
IGM
Peak Gate Current
Tj=125°C
2
A
TJ
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C..
I 2t
PG(AV)
TSTG
July, 2010. Rev.2
1/6
copyright @ Apollo Electron Co., Ltd. All rights reserved.
TF16A60
Electrical Characteristics(Tj=25 °C unless otherwise specified)
Symbol
Conditions
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
Tj = 125 °C
VTM
Peak On-State Voltage
ITM = 22.5 A, tp=380㎲
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ratings
Typ.
Max.
----
----
2.0
mA
─
__
1.55
V
─
30
─
─
30
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
0.2
----
dv/dt
IH
Gate Trigger Current
Gate Trigger Voltage
VD = 12 V, RL=30 Ω
VD = 12 V, RL=30 Ω
Non-Trigger Gate Voltage
TJ = 125 °C, VD=VDRM, RL=3.3kΩ
Critical Rate of Rise Off-State
Voltage
TJ = 125 °C,
VD=2/3 VDRM
Holding Current
IT=0.2A
Unit
Min.
─
VGD
2/6
Items
200
---
----
---
-----
mA
V
V
----
V/㎲
50
mA
TF16A60
Fig 1. Gate Characteristics
2
10
VGM (10V)
1
10
On-State Current [A]
PGM (5W)
PG(AV) (1W)
25 ℃
0
IGM (2A)
Gate Voltage [V]
Fig 2. On-State Voltage
10
o
TJ = 125 C
1
10
o
TJ = 25 C
0
10
10
VGD (0.2V)
-1
1
2
10
0.5
3
10
10
1.0
1.5
20
2π
θ
14
360°
12
θ : Conduction Angle
10
8
θ = 90
o
θ = 60
o
θ = 30
o
o
θ
θ = 180 o
θ = 150
o
θ = 120
Allowable Case Temperature [ C]
Power Dissipation [W]
π
6
4
2
0
0
2
4
6
8
10
12
3.5
14
16
18
120
110
100
θ
2π
θ
80
360°
70
60
20
π
90
θ : Conduction Angle
0
2
4
6
RMS On-State Current [A]
8
10
12
14
16
θ = 30
o
θ
θ
θ
θ
θ
o
= 60
o
= 90
o
= 120
o
= 150 o
= 180
18
20
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
200
150
o
100
50Hz
V
V
1
10
Time (cycles)
2
10
_
GT3
1
50
0
0
10
V
o
VGT (25 C)
60Hz
VGT (t C)
Surge On-State Current [A]
3.0
130
o
16
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
18
2.0
On-State Voltage [V]
Gate Current [mA]
0.1
-50
+
GT1
_
GT1
0
50
100
150
o
Junction Temperature [ C]
3/6
TF16A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
1
I
+
GT1
I
I
0.1
-50
0
50
Junction Temperature [ C]
4/6
GT1
GT3
100
o
_
_
150
1
0.1
-2
10
-1
10
0
10
Time (sec)
1
10
2
10
TF16A60
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
MILLIMETER S
MIN
25.10
25.60
38.86
39.37
7.49
7.62
26.16
26.67
2.41
2.74
4.60
4.67
1.27
1.78
7.62
8.13
11.05
11.30
15.75
16.26
1.28
1.03
5.84
6.35
6.43
6.93
5.94
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
TF16A60
TO-220F Package Dimension, Forming
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.23
0.45
0.65
2.62
1.36
0.63
0.78
0.099
0.048
0.018
0.0025
0.103
0.054
0.025
0.031
5.0
3.7
3.2
1.5
φ
φ 1
φ 2
0.197
0.146
0.126
0.059
A
E
F
I
H
B
φ
φ1
C
φ2
L
G
M
1
D
2
3
N
O
J
P
K
6/6
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
1. T1
2. T2
3. Gate