STS14N3LLH5 N-channel 30 V, 0.005 Ω, 14 A - SO-8 STripFET™ V Power MOSFET Features Type VDSS RDS(on) ID STS14N3LLH5 30 V <0.006 Ω 14 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in SO-8 package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STS14N3LLH5 14D3L SO-8 Tape and reel September 2008 Rev 3 1/12 www.st.com 12 Contents STS14N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/12 ................................................ 9 STS14N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 22 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C 14 A ID (1) Drain current (continuous) at TC=100 °C 8.75 A Drain current (pulsed) 56 A Total dissipation at TC = 25 °C 2.7 W Derating factor 0.02 W/°C -55 to 150 °C Value Unit 47 °C/W Value Unit IDM (2) PTOT (2) TJ Tstg Operating junction temperature Storage temperature 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Rthj-pcb (1) Parameter Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj Max) 8.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) 180 mJ 3/12 Electrical characteristics 2 STS14N3LLH5 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 7 A Symbol Ciss Coss Crss Qg Qgs Qgd Min. Typ. Max. 30 VDS =max rating @125 °C 1 10 µA µA ±100 nA 1 V 0.005 0.006 0.0062 0.0077 VGS= 4.5 V, ID= 7 A Unit V VDS = max rating, IDSS Table 6. 4/12 On/off states Ω Ω Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 14 A VGS= 4.5 V (see Figure 14) Min. Typ. Max. Unit 1500 295 39 pF pF pF 12 4 4.7 nC nC nC STS14N3LLH5 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. 9.3 14.5 22.7 4.5 VDD=15 V, ID= 7 A, RG=4.7 Ω, VGS =10 V (see Figure 13) Unit ns ns ns ns Source drain diode Max Unit Source-drain current 14 A ISDM(1) Source-drain current (pulsed) 56 A VSD(2) Forward on voltage ISD = 14 A, VGS=0 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, ISD trr Qrr IRRM Parameter Test conditions di/dt = 100 A/µs, VDD= 25 V, Tj=150 °C Min Typ. 25 17.5 1.4 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STS14N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance BVDSS HV42950 (norm) 1.1 1.08 1.06 ID=1 mA 1.04 1.02 1 0.98 0.96 0.94 0.92 -55 -30 6/12 -5 20 45 70 95 120 145 TJ(°C) STS14N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. HV42940 VGS(V) Capacitance variations HV42930 C(pF) f=1MHz VGS=0 12 2000 ID=14 A 10 Ciss 1500 8 6 1000 4 500 2 0 Coss Crss 0 0 5 10 20 Qg(nC) 15 Figure 10. Normalized gate threshold voltage vs temperature HV42960 VGS(th) 10 0 20 C(pF) Figure 11. Normalized on resistance vs temperature HV42970 RDS(on) (norm) (norm) 1.8 1.2 ID=7 A ID=250 µA 1.6 1 1.4 1.2 0.8 1 0.6 0.8 0.4 0.6 0.4 0.2 0.2 0 -55 -30 -5 20 45 70 95 120 145 TJ(°C) 0 -55 -30 -5 20 45 70 95 120 145 TJ(°C) Figure 12. Source-drain diode forward characteristics HV42980 VSD(V) 0.9 TJ=-55 °C 0.8 TJ=25 °C 0.7 0.6 TJ=150 °C 0.5 0.4 0 5 10 15 ISD(A) 7/12 Test circuit 3 STS14N3LLH5 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STS14N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS14N3LLH5 SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS14N3LLH5 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 12-Nov-2007 1 First release 15-Apr-2008 2 – Updated Figure 1: Internal schematic diagram – Document status promoted from preliminary data to datasheet. 23-Sep-2008 3 VGS value has been changed on Table 2 and Table 5 11/12 STS14N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12