STMICROELECTRONICS STPS120MF

STPS120MF
Power Schottky rectifier in flat package
Features
A
■
Very low profile package: 0.85 mm
■
Backward compatible with standard STmite
footprint
■
Very small conduction losses
■
Negligible switching losses
■
Extremely fast switching
■
Low forward voltage drop for higher efficiency
and extended battery life
■
Low thermal resistance
IF(AV)
1A
■
Avalanche capability specified
VRRM
20 V
■
Hologen free molding compound
Tj (max)
150 °C
VF (max)
0.41 V
K
STmite flat
(DO222-AA)
Table 1.
Device summary
Description
Single Schottky rectifier suited for switch mode
power supplies and high frequency dc to dc
converters.
Packaged in STmite flat, this device is intended
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
Due to the very small size of the package this
device fits battery powered equipment (cellular,
notebook, PDA’s, printers) as well as chargers
and PCMCIA cards.
May 2008
Rev 1
1/7
www.st.com
Characteristics
1
STPS120MF
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Value
Unit
VRRM
Repetitive peak reverse voltage
20
V
IF(RMS)
Forward current rms
2
A
IF(AV)
Average forward current
Tc = 140 °C δ = 0.5
1
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
1400
W
-65 to + 150
°C
150
°C
10000
V/µs
Tstg
Storage temperature range
Tj
Maximum operating junction
dV/dt
1.
Parameter
dPtot
--------------dTj
temperature(1)
Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C)
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth ( j – a )
Table 3.
Thermal resistance
Symbol
Rth(j-c)
Rth(j-a)(1)
Parameter
Value
Unit
Junction to case
20
°C/W
Junction to ambient
250
°C/W
1. Mounted with minimum recommended pad size, PC board FR4
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Tj = 25° C
Tj = 100° C
IR(1)
Reverse leakage current
Tj = 25° C
Tj = 100° C
Tj = 25° C
Tj = 100° C
Tj = 25° C
VF(1)
Forward voltage drop
Tj = 100° C
Tj = 25° C
Tj = 100° C
VR = VRRM
VR = 10 V
VR = 5 V
IF = 1 A
Typ.
Max.
1.3
3.9
275
850
0.6
2.0
145
450
0.4
10.
105
300
0.44
0.49
0.36
0.41
0.48
0.54
0.42
0.48
Unit
µA
V
IF = 2 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.34 x IF(AV) + 0.07 IF2(RMS)
2/7
Min.
STPS120MF
Figure 1.
0.6
Characteristics
Conduction losses versus average Figure 2.
current
PF(AV)(W)
1.2
δ=0.1
0.5
δ=0.5
δ=0.2
Average forward current versus
ambient temperature (δ = 0.5)
IF(AV)(A)
1.1
δ=1
Rth(j-a)=Rth(j-c)
1.0
δ=0.05
0.9
0.4
0.8
0.7
0.3
0.6
Rth(j-a)=250°C/W
0.5
0.2
0.4
0.3
T
0.1
0.2
IF(AV)(A)
δ=tp/T
Tamb(°C)
0.1
tp
0.0
0.0
0.0
0.1
Figure 3.
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
Normalized avalanche power
derating versus pulse duration
25
Figure 4.
PARM(tp)
PARM(1 µs)
50
75
100
125
150
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1
1.2
0.1
0.8
1
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
Figure 5.
0.1
1
0
10
100
25
1000
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
Figure 6.
1.0
6
50
75
100
125
150
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Zth(j-a)/Rth(j-a)
0.9
5
0.8
0.7
4
0.6
Ta=25°C
0.5
3
Ta=75°C
2
1
0.4
0.3
Ta=125°C
IM
t
δ =0.5
0.1
t(s)
Single pulse
tp(s)
0.0
0
1.E-03
0.2
1.E-02
1.E-01
1.E+00
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
3/7
Characteristics
Figure 7.
1.E+01
STPS120MF
Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 8.
IR(mA)
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
Vosc=30mV
Tj=25°C
Tj=150°C
1.E+00
Tj=125°C
1.E-01
Tj=100°C
100
Tj=75°C
1.E-02
Tj=50°C
1.E-03
VR(V)
Tj=25°C
VR(V)
10
1.E-04
0
Figure 9.
2
4
6
8
10
12
14
16
18
0
20
Forward voltage drop versus
forward current (low level)
2
4
6
8
10
12
14
16
18
20
Figure 10. Forward voltage drop versus
forward current (high level)
IFM(A)
IFM(A)
100.0
2.0
1.8
1.6
Tj=100°C
(Maximum values)
1.4
Tj=100°C
(Maximum values)
10.0
1.2
Tj=100°C
(Typical values)
1.0
Tj=25°C
(Maximum values)
Tj=100°C
(Typical values)
0.8
1.0
Tj=25°C
(Maximum values)
0.6
0.4
0.2
VFM(V)
VFM(V)
0.0
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 11. Thermal resistance junction to ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35 µm, typical values)
250
Rth(j-a)(°C/W)
225
200
175
150
125
100
75
50
25
S(cm²)
0
0.0
4/7
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
STPS120MF
2
Package information
Package information
●
Epoxy meets UL94, V0
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 5.
STmite flat dimensions
Dimensions
Ref.
L
E1
D
L1
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.80
0.85
0.95
0.031 0.033 0.037
b
0.40
0.55
0.65
0.016 0.022 0.026
b2
0.70
0.85
1.00
0.027 0.033 0.039
L2
b
b2
L3
E
Millimeters
c
A
c
0.10
0.15
0.25
0.004 0.006 0.009
D
1.75
1.90
2.05
0.069 0.075 0.081
E
3.60
3.80
3.90
0.142 0.150 0.154
E1
2.80
2.95
3.10
0.110 0.116 0.122
L
0.50
0.55
0.80
0.020 0.022 0.031
L1
2.10
2.40
2.60
0.083 0.094 0.102
L2
0.45
0.60
0.75
0.018 0.024 0.030
L3
0.20
0.35
0.50
0.008 0.014 0.020
Figure 12. STmite flat recommended footprint (all dimensions in mm)
0.85 0.63
2.00
0.65
0.65
0.95
1.95
4.13
5/7
Ordering information
3
Ordering information
Table 6.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPS120MF
F12
STmite flat
16 mg
12000
Tape and reel
Revision history
Table 7.
6/7
STPS120MF
Document revision history
Date
Revision
15-May-2008
1
Changes
First issue.
STPS120MF
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