STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS(on) max VDSS (@Tjmax) Type ID 3 3 STB25NM60N 650 V < 0.160 Ω 21 A STB25NM60N-1 650 V < 0.160 Ω 21 A STF25NM60N 650 V < 0.160 Ω 21 A(1) 1 650 V < 0.160 Ω 21 A STW25NM60N 650 V < 0.160 Ω 21 A ■ Low input capacitance and gate charge ■ Low gate input resistance 2 TO-220 TO-220FP 3 D²PAK 1. Limited only by maximum temperature allowed 100% avalanche tested 1 1 STP25NM60N ■ 2 3 12 3 TO-247 I²PAK Figure 1. 2 1 Internal schematic diagram Application ■ Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Order codes Marking Package Packaging STB25NM60N B25NM60N D²PAK Tape and reel STB25NM60N-1 B25NM60N I²PAK Tube STF25NM60N F25NM60N TO-220FP Tube STP25NM60N P25NM60N TO-220 Tube STW25NM60N W25NM60N TO-247 Tube June 2008 Rev 12 1/18 www.st.com 18 Contents STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 ................................................ 9 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 - I²PAK D²PAK - TO-247 VDS Drain-source voltage (VGS = 0) 600 VGS Gate- source voltage ±25 Unit TO-220FP V V (1) A ID Drain current (continuous) at TC = 25 °C 21 21 ID Drain current (continuous) at TC = 100 °C 13 13 (1) A Drain current (pulsed) 84 84 (1) A PTOT Total dissipation at TC = 25 °C 160 40 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) -- 2500 V IDM (2) dv/dt (3) Peak diode recovery voltage slope Tstg Tj Storage temperature 15 V/ns –55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 I²PAK D²PAK TO-247 TO-220FP Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junctionambient max Tl Table 4. Symbol 0.78 -- -62.5 Maximum lead temperature for soldering purpose 3.1 30 -- -- -- 50 62.5 300 °C/W °C/W °C Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 10 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAR, VDD = 50 V) 850 mJ 3/18 Electrical characteristics 2 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD = 480 V, ID = 21 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 10.5 A 600 V 48 2 3 V/ns Ω 0.130 0.160 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS=15 V, ID =11 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Min. Typ. Max. Unit 17 S VDS = 50 V, f = 1 MHz, VGS = 0 2400 200 25 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 310 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID =21 A, VGS = 10 V, (see Figure 19) 84 14 44 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 1.6 Ω Coss eq. (2) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/18 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD (2) trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit 24.5 18 94 24 VDD =300 V, ID = 10 A RG = 4.7 Ω VGS = 10 V (see Figure 18) ns ns ns ns Source drain diode Symbol (1) Electrical characteristics Test conditions Min Typ. Max Unit 21 84 A A 1.3 V Forward on voltage ISD = 21 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 100 V (see Figure 23) 427 7.2 33.6 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 23) 526 9.1 34.5 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/18 Electrical characteristics STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/18 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Typ Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 13/18 Package mechanical data STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/18 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/18 Packaging mechanical data 5 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 30-Nov-2004 1 First release. 22-Mar-2005 2 Modified title 23-May-2005 3 Inserted some values in Table 7 08-Jun-2005 4 Inserted new row in Table 6 08-Sep-2005 5 New value for Coss eq in Table 6 28-Sep-2005 6 Added curves 26-Oct-2005 7 Complete version 23-Jun-2006 8 New template, new value on Absolute maximum ratings 25-Aug-2006 9 Wrong title on first page 14-Nov-2006 10 Modified Avalanche characteristics 19-Jan-2007 11 Typo mistake on Table 7 11-Jun-2008 12 – Updated RDS(on) max value in Table 5 – Corrected capacitance value in Table 6 – Update Figure 13: Capacitance variations 17/18 STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18