SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS(on) = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra Low Gate Charge (Typ. Qg = 121nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current Ratings 600 Units V ±30 V -Continuous (TC = 25oC) 45.8 -Continuous (TC = 100oC) 28.9 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 15.3 A EAR Repetitive Avalanche Energy 3.7 mJ 100 V/ns 50 V/ns dv/dt - Pulsed A 137.4 A (Note 2) 2926 mJ MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) 368 W - Derate above 25oC 2.94 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.34 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient ©2011 Fairchild Semiconductor Corporation FCH47N60NF Rev. A1 Units o C/W 40 1 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET January 2011 Device Marking FCH47N60NF Device FCH47N60NF Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.78 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 1mA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 ID = 1mA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2 - 4 V Static Drain to Source On Resistance VGS = 10V, ID = 23.5A - 57.5 65.0 mΩ gFS Forward Transconductance VDS = 40V, ID = 23.5A - 52 100 S VDS = 100V, VGS = 0V f = 1MHz - 4600 6120 pF - 195 260 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3.0 5.0 Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 108 - pF Cosseff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 492 - pF Qg(tot) Total Gate Charge at 10V - 121 157 nC Qgs Gate to Source Gate Charge VDS = 380V, ID = 23.5A, VGS = 10V - 23 - nC - 47 - nC - 0.9 - Ω - 34 78 ns - 22 54 ns - 117 244 ns - 4 18 ns Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) (Note 4) Drain Open Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 23.5A RGEN = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 47 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 141 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 23.5A - - 1.2 V trr Reverse Recovery Time - 169 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 23.5A dIF/dt = 100A/μs - 1.3 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 15.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 45.8 A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCH47N60NF Rev. A1 2 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 500 VGS = 15V 10V 8V 6V 5V 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 10 VDS, Drain-Source Voltage[V] 1 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 400 IS, Reverse Drain Current [A] 120 100 VGS = 10V 80 VGS = 20V 60 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 1 0.4 40 0 40 80 120 ID, Drain Current [A] 160 Figure 5. Capacitance Characteristics 1.4 10 VGS, Gate-Source Voltage [V] Coss 4 10 Ciss 3 10 Crss 2 10 10 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 5 10 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 140 RDS(ON) [mΩ], Drain-Source On-Resistance 2 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FCH47N60NF Rev. A1 1 10 100 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 23.5A 0 0 600 3 20 40 60 80 100 120 Qg, Total Gate Charge [nC] 140 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.0 *Notes: 1. VGS = 10V 2. ID = 23.5A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 50 10μs 100 40 100μs 10 ID, Drain Current [A] ID, Drain Current [A] 1.5 Figure 10. Maximum Drain Current vs. Case Temperature 500 1ms 10ms Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1 2.5 o 30 20 10 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 t1 0.05 0.01 t2 0.02 *Notes: 0.01 Single pulse 1E-3 -5 10 FCH47N60NF Rev. A1 PDM 0.1 o 1. ZθJC(t) = 0.34 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FCH47N60NF 600V N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60NF Rev. A1 5 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCH47N60NF Rev. A1 6 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET Mechanical Dimensions TO-247-3L Dimensions in Millimeters FCH47N60NF Rev. A1 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 FCH47N60NF Rev. A1 8 www.fairchildsemi.com FCH47N60NF 600V N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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