FAIRCHILD FGB3040CS_12

FGB3040CS
EcoSPARKTM 300mJ,
tm
400V, N-Channel Current Sensing Ignition IGBT
General Description
Applications
The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
„ Smart Automotive lgnition Coil Driver Circuits
„ ECU Based Systems
„ Distributorless Based Systems
„ Coil on Plug Based Systems
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
Ratings
430
Units
V
BVECS
Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
24
V
ESCIS25
Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
300
mJ
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
170
mJ
IC25
Continuous Collector Current, at VGE = 4.0V, TC = 25°C
21
A
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
19
A
VGEM
Maximum Continuous Gate to Emitter Voltage
±10
V
Power Dissipation, at TC = 25°C
150
W
1
W/oC
PD
Power Dissipation Derating, for TC > 25oC
TJ
Operating Junction Temperature Range
-40 to 175
o
C
TSTG
Storage Junction Temperature Range
-40 to 175
o
C
TL
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
300
oC
TPKG
Max. Package Temp. for Soldering (Package Body for 10 sec)
260
oC
ESD
Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
4
kV
@2012 Fairchild Semiconductor Corporation
FGB3040CS Rev. C1
1
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
April 2012
Device Marking
3040CS
Device
FGB3040CS
Package
TO-263 6 Lead
Reel Size
300mm
Tape Width
24mm
Quantity
800
3040CS
FGB3040CS
TO-263 6 Lead
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
BVCER
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 17
TJ = -40 to 150oC
370
410
430
V
BVCES
ICE = 10mA, VGE = 0V
Collector to Emitter Breakdown Voltage RGE = 0, See Fig. 17
TJ = -40 to 150oC
390
430
450
V
BVECS
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ±2mA
±12
±14
-
V
IGEO
Gate to Emitter Leakage Current
VGE = ±10V
-
-
±9
μA
ICES
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 13
IECS
Emitter to Collector Leakage Current
VEC = 24V,
See Fig. 13
R1
Series Gate Resistance
TC = 25oC
-
-
25
μA
TC = 150oC
-
-
1
mA
-
-
1
TC = 150oC
-
-
40
-
100
-
Ω
TC = 25oC
mA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V
TC = 25oC
See Fig. 5
-
1.3
1.6
V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V
TC = 150oC
See Fig. 6
-
1.6
1.85
V
-
1.8
2.35
V
VCE = 5V, VGE = 5V
-
37
-
A
-
15
-
nC
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V
ICE(ON)
Collector to Emitter On State Current
o
TC = 150 C
Dynamic Characteristics
QG(ON)
Gate Charge
ICE = 10A, VCE = 12V,
VGE = 5V, See Fig. 16
VGE(TH)
Gate to Emitter Threshold Voltage
ICE = 1mA, VCE = VGE
See Fig. 12
TC = 25oC
TC = 150oC
1.3
1.6
2.2
0.75
1.1
1.8
V
VGEP
Gate to Emitter Plateau Voltage
ICE = 10A, VCE = 12V
-
3.0
-
βAREA
Emitter Sense Area Ratio
Sense Area/Total Area
-
1/200
-
V
-
β5Ω
Emitter Current Sense Ratio
ICE = 8.0A, VGE = 5V, RSENSE = 5 Ω
-
230
-
-
β20Ω
Emitter Current Sense Ratio
ICE = 9.0A, VGE = 5V, RSENSE = 20 Ω
550
640
765
-
-
0.6
4
μs
-
1.5
7
μs
-
4.7
15
μs
-
2.6
15
μs
TJ = 25°C, L = 3.0mHy, ICE = 14.2A,
RG = 1k Ω, VGE = 5V, See Fig. 3&4
-
-
300
mJ
All Packages
-
-
1.0
oC/W
Switching Characteristics
td(ON)R
trR
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
VGE = 5V, RG = 1KΩ
Current Rise Time-Resistive
TJ = 25°C, See Fig. 14
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500μHy,
VGE = 5V, RG = 1KΩ
tfL
Current Fall Time-Inductive
TJ = 25°C, See Fig. 14
SCIS
Self Clamped inductive Switching
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
FGB3040CS Rev. C1
2
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Package Marking and Ordering Information
400
ICE = 18A
0.5
VSENSE, EMITTER SENSE VOLTAGE (mV)
VSENSE, Emitter Sense Voltage (V)
0.6
o
VGE = 5V, TJ = 25 C
ICE = 15A
ICE = 10A
300
ICE = 8A
0.4
0.3
ICE = 5A
ICE = 3A
ICE = 1A
200
ICE = 0.5A
0.2
100
0.1
0.0
1
10
100
1000
RSENSE, Emitter Sense Resistance (ohms)
35
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
o
TJ = 25 C
20
15
o
10
TJ = 150 C
5
0
SCIS Curves valid for Vclamp Voltages of <430V
0
25
50
75 100 125 150
tCLP, TIME IN CLAMP (μS)
175
200
ICE = 6A
VGE = 3.7V
1.32
VGE = 4.0V
1.28
1.24
1.20
VGE = 8V
VGE = 5V
VGE = 4.5V
1.16
1.12
-75 -50 -25 0 25 50 75 100 125 150 175
o
TJ, JUNCTION TEMPERTURE ( C)
Figure 5. Collector to Emitter On-State Voltage
vs. Junction Temperature
FGB3040CS Rev. C1
0
2
4
6
8 10 12 14 16 18 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
35
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
o
TJ = 25 C
20
15
o
10
TJ = 150 C
5
0
SCIS Curves valid for Vclamp Voltages of <430V
0
2
4
6
L, INDUCTANCE (mHy)
8
10
Figure 4. Self Clamped Inductive Switching
Current vs. Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Self Clamped Inductive Switching
Current vs. Time in Clamp
1.36
0
Figure 2. Emitter Sense Voltage vs. Collector to
Emitter Current
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
Figure 1. Emitter Sense Voltage vs. Emitter Sense
Resistance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
o
VGE = 5V, RSENSE = 5 ohms, TJ = 25 C
1.8
1.7
1.6
ICE = 10A
VGE = 3.7V
VGE = 4.0V
1.5
1.4
VGE = 4.5V
1.3
VGE = 5V
VGE = 8V
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
o
TJ, JUNCTION TEMPERTURE ( C)
Figure 6. Collector to Emitter On-State Voltage
vs. Junction Temperature
3
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
(Continued)
40
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
30
VGE = 4.0V
VGE = 3.7V
20
10
o
0
TJ = -40 C
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
40
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
30
VGE = 4.0V
VGE = 3.7V
20
10
o
0
TJ = 175 C
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 4.0V
20
15
10
5
0
25
50
75
100
125
150
o
TC, CASE TEMPERATURE( C)
10
o
0
TJ = 25 C
0
40
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VCE = 5V
30
TJ = -40oC
TJ = 25oC
TJ = 175oC
20
10
0
0
1
2
3
4
5
VGE, GATE TO EMITTER VOLTAGE (V)
6
2.0
VCE = VGE
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
0.8
-50
175
Figure 11. DC Collector Current vs. Case
Temperature
FGB3040CS Rev. C1
20
Figure 10. Transfer Characteristics
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
Figure 9. Collector to Emitter On-State Voltage
vs. Collector Current
25
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
30
VGE = 4.0V
VGE = 3.7V
Figure 8. Collector to Emitter On-State Voltage
vs. Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
40
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Threshold Voltage vs. Junction
Temperature
4
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Typical Performance Curves
(Continued)
10000
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
SWITCHING TIME (μS)
LEAKAGE CURRENT (μA)
VECS = 24V
1000
100
10
VCES = 300V
1
-25
Figure 13. Leakage Current vs. Junction
Temperature
VGS, GATE TO EMITTER VOLTAGE(V)
CAPACITANCE (pF)
f = 1MHz
VGE = 0V
CIES
800
400
CRES
COES
0
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 15. Capacitance vs. Collector to Emitter
Voltage
BVCER, BREAKDOWN VOLTAGE (V)
Inductive tOFF
6
4
Resistive tON
50
75
100
125
150
o
TJ, JUNCTION TEMPERATURE ( C)
175
Figure 14. Switching Time vs. Junction
Temperature
2000
1200
8
0
25
0
25 50 75 100 125 150 175
o
TJ, JUNCTION TEMPERATURE ( C)
1600
Resistive tOFF
2
VCES = 250V
0.1
-50
10
10
o
ICE = 10A, TJ = 25 C
8
VCE = 6V
6
VCE = 12V
4
2
0
0
5
10
15
20
25
Qg, GATE CHARGE(nC)
30
35
Figure 16. Gate Charge
415
ICER = 10mA
o
TJ = -40 C
410
o
405
TJ = 25 C
o
TJ = 175 C
400
395
10
100
RG, SERIES GATE RESISTANCE (Ω)
1000
6000
Figure 17. Break down Voltage vs. Series Gate Resistance
FGB3040CS Rev. C1
5
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Typical Performance Curves
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
1
10
10
Figure 18. IGBT Normalized Transient Thermal Impedance, Junction to Case
FGB3040CS Rev. C1
6
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Typical Performance Curves
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Test Circuit and Waveforms
BVCER
FGB3040CS Rev. C1
7
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
www.fairchildsemi.com
8
FGB3040CS Rev. C1
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FGB3040CS Rev. C1
9
www.fairchildsemi.com
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
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