FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. • High speed switching • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A • High input impedance Applications • Induction heating and Microwave oven • Soft switching applications C G TO-3P E G C E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC Ratings Units 1200 V ± 25 V Collector Current @ TC = 25oC 60 A Collector Current o 30 A A @ TC = 100 C o ICM (1) Pulsed Collector Current @ TC = 25 C 90 IF Diode Continuous Forward Current @ TC = 100oC 30 A 339 W PD o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C 132 Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.38 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.2 o C/W 40 o C/W RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. A - 1 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT May 2009 Device Marking Device Package FGA30N120FTD FGA30N120FTDTU TO-3PN Eco Status Packaging Type Qty per Tube Tube 30ea RoHS For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 30mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 6 7.5 V IC = 30A, VGE = 15V - 1.6 2 V IC = 30A, VGE = 15V, TC = 125oC - 2.0 - V - 5140 - pF VCE = 30V, VGE = 0V, f = 1MHz - 150 - pF - 95 - pF - 31 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 101 - ns td(off) Turn-Off Delay Time - 198 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC - 259 - ns - 0.54 - mJ - 1.16 1.51 mJ - 1.70 - mJ td(on) Turn-On Delay Time - 40 - ns tr Rise Time - 127 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Qg - 211 - ns - 364 - ns - 0.74 - mJ - 1.63 - mJ Total Switching Loss - 2.37 - mJ Total Gate Charge - 208 - nC - 41 - nC - 97 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH30N120FTD Rev. A VCC = 600V, IC = 30A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 30A, VGE = 15V 2 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Package Marking and Ordering Information Symbol Parameter TC = 25°C unless otherwise noted Test Conditions VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr IF =30A, Diode Peak Reverse Recovery Current di/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGA30N120FTD Rev. A IF = 30A Min. Typ. Max TC = 25oC - 1.3 1.7 TC = 125oC - 1.3 - TC = 25oC - 730 - - 775 - TC = 25oC - 43 - o TC = 125 C - 47 - TC = 25oC - 5.9 - o - 18.2 - TC = 125oC TC = 125 C 3 Units V ns A µC www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 Figure 2. Typical Output Characteristics 180 o TC = 25 C 20V 150 150 17V 15V 120 Collector Current, IC [A] Collector Current, IC [A] o TC = 125 C 20V 12V 90 60 10V 9V 15V 17V 120 90 12V 60 10V 30 30 9V VGE = 8V 0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 Figure 3. Typical Saturation Voltage Characteristics 8 120 Common Emitter VGE = 15V 100 o TC = 25 C o TC = 125 C 80 Common Emitter VCE = 20V 100 Collector Current, IC [A] Collector Current, IC [A] 2 4 6 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 120 60 40 20 o TC = 25 C o TC = 125 C 80 60 40 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 15 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Common Emitter 60A 2.5 5 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 3.0 Collector-Emitter Voltage, VCE [V] VGE = 8V 2.0 30A 1.5 IC = 10A o TC = 25 C 16 12 8 60A 4 30A IC = 15A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH30N120FTD Rev. A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 8000 Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 125 C Cies 16 Common Emitter VGE = 0V, f = 1MHz o TC = 25 C Capacitance [pF] 6000 12 8 30A IC = 15A Cres 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 200 100 Common Emitter o 10µs TC = 25 C Collector Current, Ic [A] 12 600V VCC = 200V 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] Coes 2000 60A 4 4000 400V 9 6 3 100µs 10 1ms 10 ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 0 0 50 100 150 200 Gate Charge, Qg [nC] 2. TJ = 150 C 3. Single Pulse 0.01 250 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 500 2000 100 tr Common Emitter VCC = 600V, VGE = 15V IC = 30A td(on) td(off) Switching Time [ns] Switching Time [ns] 1000 tf Common Emitter VCC = 600V, VGE = 15V IC = 30A 100 o TC = 25 C o TC = 25 C o o TC = 125 C TC = 125 C 10 0 20 40 60 80 50 100 0 Gate Resistance, RG [Ω ] FGH30N120FTD Rev. A 5 20 40 60 Gate Resistance, RG [Ω ] 80 100 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 1200 1000 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω o o TC = 25 C o o TC = 125 C tr 100 td(on) 10 10 20 30 40 TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C tf td(off) 100 10 50 20 30 40 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 50 Figure 16. Switching Loss vs. Collector Current 10 10 Common Emitter VGE = 15V, RG = 10Ω o Switching Loss [mJ] Switching Loss [mJ] TC = 25 C Eoff 1 Common Emitter VCC = 600V, VGE = 15V Eon IC = 30A Eoff o TC = 125 C 1 Eon o TC = 25 C o TC = 125 C 0.1 0 20 40 60 80 Gate Resistance, RG [Ω ] 0.1 10 100 Figure 17. Turn off Switching SOA Characteristics 50 Figure 18. Forward Characteristics 100 Forward Current, IF [A] 100 Collector Current, IC [A] 20 30 40 Collector Current, IC [A] 10 10 o TJ = 125 C o TJ = 25 C 1 o TC = 25 C Safe Operating Area o TC = 125 C o VGE = 15V, TC = 125 C 1 1 10 100 0.1 0.0 1000 2000 Collector-Emitter Voltage, VCE [V] FGH30N120FTD Rev. A 6 0.5 1.0 Forward Voltage, VF [V] 1.5 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Typical Performance Characteristics Figure 19. Reverse Current Figure 20. Stored Charge 20 40 30 20 10 Stored Recovery Charge, Qrr [µC] Reverse Recovery Currnet, Irr [A] 50 200A/µs di/dt = 100A/µs 20 30 Forward Current, IF [A] 18 16 200A/µs 14 di/dt = 100A/µs 12 10 8 6 10 40 20 30 Forward Current, IF [A] 40 Figure 21. Reverse Recovery Time Reverse Recovery Time, trr [ns] 1000 800 600 400 10 di/dt = 100A/µs 200A/µs 20 30 Forward Current, IF [A] 40 Figure 22. Transient Thermal Impedance of IGBT PDM t1 t2 FGA30N120FTD Rev. A 7 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Typical Performance Characteristics FGA30N120FTD 1200V, 30A Trench IGBT Mechanical Dimensions TO-3PN FGH30N120FTD Rev. 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