FAIRCHILD FDI040N06

FDI040N06
tm
N-Channel PowerTrench® MOSFET
60V, 168A, 4.0mΩ
Features
General Description
• RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
Application
• High Power and Current Handling Capability
• DC to DC convertors / Synchronous Rectification
• RoHS Compliant
D
G D S
G
I2-PAK
FDI Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Parameter
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Units
V
±20
V
-Continuous (TC = 25oC, Silicion Limited)
168*
-Continuous (TC = 100oC, Silicion Limited)
118*
-Continuous (TC = 25oC, Package Limited)
120
- Pulsed
A
(Note 1)
672
A
(Note 2)
872
mJ
7.0
V/ns
(Note 3)
(TC = 25oC)
231
W
- Derate above 25oC
1.54
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
Ratings
60
o
-55 to +175
C
300
oC
Ratings
Units
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
0.65
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2009 Fairchild Semiconductor Corporation
FDI040N06 Rev. A
1
o
C/W
www.fairchildsemi.com
FDI040N06 N-Channel PowerTrench® MOSFET
June 2009
Device Marking
FDI038N06
Device
FDI038N06
Package
TO-262
Reel Size
Tube
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
60
-
-
V
-
0.04
-
V/oC
VDS = 60V, VGS = 0V
-
-
1
VDS = 60V, VGS = 0V, TC = 150oC
-
-
500
µA
VGS = ±20V, VDS = 0V
-
-
±100
2.5
3.5
4.5
V
-
3.2
4.0
mΩ
-
169
-
S
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC= 25oC
ID = 250µA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
gFS
Forward Transconductance
VDS = 10V, ID = 75A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
-
6190
8235
pF
-
900
1195
pF
-
385
580
pF
-
102
133
nC
-
32
-
nC
-
32
-
nC
-
30
70
ns
-
40
90
ns
-
55
120
ns
-
24
58
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 30V, ID = 75A
VGS = 10V, RGEN = 4.7Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
168
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
672
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.3
V
trr
Reverse Recovery Time
-
41
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
-
47
-
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDI040N06 Rev. A
2
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FDI040N06 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
1000
1000
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
ID,Drain Current[A]
100
ID,Drain Current[A]
Figure 2. Transfer Characteristics
10
1
100
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250µs Pulse Test
o
2. TC = 25 C
0.1
0.01
1
6
0.1
1
VDS,Drain-Source Voltage[V]
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS,Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
1000
3.5
VGS = 10V
3.0
VGS = 20V
o
175 C
100
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
2.5
0
60
120
180
240
ID, Drain Current [A]
300
1
0.2
360
Figure 5. Capacitance Characteristics
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
1.2
10
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
2. 250µs Pulse Test
Figure 6. Gate Charge Characteristics
10000
1000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100
0.1
FDI040N06 Rev. A
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
4.0
RDS(ON) [mΩ ],
Drain-Source On-Resistance
3
VDS = 12V
VDS = 30V
VDS = 48V
8
6
4
2
*Note: ID = 75A
0
1
10
VDS, Drain-Source Voltage [V]
0
30
3
20
40
60
80
100
Qg, Total Gate Charge [nC]
120
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FDI040N06 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.4
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 10mA
0.8
-80
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
1.6
1.2
0.8
*Notes:
1. VGS = 10V
2. ID = 75A
0.4
-75
200
Figure 9. Maximum Safe Operating Area
-25
25
75
125
175
o
TJ, Junction Temperature [ C]
225
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
180
100µs
144
100
ID, Drain Current [A]
ID, Drain Current [A]
2.0
1ms
10ms
10
100ms
Operation in This Area
is Limited by R DS(on)
1s
*Notes:
1
o
108
Limited by package
72
36
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage [V]
0
25
100
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [Zθ JC]
1
0.5
0.1
0.2
0.1
0.05
0.01
t1
0.01
*Notes:
Single pulse
t2
o
1. ZθJC(t) = 0.65 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
-5
10
FDI040N06 Rev. A
PDM
0.02
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FDI040N06 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDI040N06 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDI040N06 Rev. A
5
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FDI040N06 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
VGS
( D r iv e r )
GS
G
S am e T ype
as D U T
V
DD
• d v / d t c o n t r o lle d b y R G
• IS D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id t h
D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v /d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDI040N06 Rev. A
6
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I2-PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.54 TYP
2.40 ±0.20
10.00 ±0.20
FDI040N06 Rev. A
7
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FDI040N06 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
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