FREESCALE MRF372R3

Freescale Semiconductor
Technical Data
Document Number: MRF372
Rev. 9, 5/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF372R3
MRF372R5
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two - Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — - 35 dBc
• Typical Broadband Two - Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — - 31 dBc
• Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Power
Features
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
470 - 860 MHz, 180 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.5
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M3 (Minimum)
MRF372R3 MRF372R5
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
68
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain - Source On - Voltage (1)
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.28
0.45
Vdc
gfs
—
2.6
—
S
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
260
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
69
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
2.5
—
pF
Off Characteristics
(1)
On Characteristics
Forward Transconductance
(VDS = 10 V, ID = 3 A)
Dynamic Characteristics (1)
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
IMD
—
- 35
- 31
dBc
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
—
14.5
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
- 31
—
dBc
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
MRF372R3 MRF372R5
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
Ciss
150
15
100
10
Coss
50
0
0
5
Crss
10
20
30
40
50
C rss , Capacitance (pF)
C oss , C iss , Capacitance (pF)
200
0
60
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: Ciss does not include input matching capacitance.
Figure 1. Capacitance versus Voltage
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
3
GATE
L1
L2
L3
R1
VGG
R3
DRAIN
L4
R4
R5
VDD
+
C3
R2
C5
C8
C7
C12
C10
Figure 2. 860 MHz Narrowband DC Bias Networks
Table 5. 860 MHz Narrowband DC Bias Networks Component Designations and Values
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Designation
Description
C1
2.2 pF Chip Capacitor, ATC
C2
0.5 — 5.0 pF Variable Capacitor, Johansen Gigatrim
C3A, B
22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
C4A, B, C14A, B
47.0 pF Chip Capacitors, ATC
C5A, B
100 pF Chip Capacitors, ATC
C6
10.0 pF Chip Capacitor, ATC
C7A, B
2.7 pF Chip Capacitors, ATC
C8A, B
1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT
C9
10.0 pF Chip Capacitor, ATC
C10A, B
2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT
C11
5.1 pF Chip Capacitor, ATC
C12A, B
0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT
C13
3.9 pF Chip Capacitor, ATC
C15
1.2 pF Chip Capacitor, ATC
L1A, B
130 nH, Coilcraft #132 - 11SM
L2A, B
#24 AWG, 3 Turns Loose, Fair Rite #2643706001
L3A, B
3.85 nH, Coilcraft #0906 - 4
L4A, B
5.0 nH, Coilcraft #A02T
R1A, B, R2A, B
R4A, B, R5A, B
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R3A, B
12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206)
PCB
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils, εr = 3.48
Balun A, B
Vertical 860 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2
MRF372R3 MRF372R5
4
RF Device Data
Freescale Semiconductor
R2A
R1A
L1A
L2A
C3A
C10A
C8A
C5A
L3A
R4A
R5A
L4A
R3A
C4A
C12A
C7A
C14A
C6
C1
C2
C9
C4B
R3B
C3B
L1B
L2B
L3B
C5B
R1B
R2B
C8B
R4B
C11
L4B
C15
C13
C14B
R5B
C7B
C12B
C10B
MRF372
Rev 1a
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil "tab"
fits into the main PCB slot" resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 3. 860 MHz Narrowband Component Layout
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
5
TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS
35
20
Gps
−20
−25
h
−30
15
−35
10
−40
IMR
5
−45
0
IMR, INTERMODULATION RATIO (dB)
25
30
h, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
−15
VDD = 32 Vdc
IDQ = 1600 mA
2 K Mode 64 QAM
10 dB Peak/Avg. Ratio
−50
100
10
Pout, OUTPUT POWER (WATTS) AVG.
Note:
IMR measured using Delta Marker Method.
Figure 4. COFDM Performance (860 MHz)
40
30
−25
25
−30
h
20
−35
Gps
15
−40
IMR
10
−45
5
10
100
18
G ps, POWER GAIN (dB)
−20
20
IMR, INTERMODULATION RATIO (dB)
h, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
35
−15
VDD = 32 Vdc
IDQ = 1600 mA
6 dB Peak/Avg. Ratio
IDQ = 1600 mA
1.2 A
16
14
800 mA
400 mA
VDD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
12
−50
10
10
Pout, OUTPUT POWER (WATTS) AVG.
Note:
Pout, OUTPUT POWER (WATTS) PEP
IMR measured using Delta Marker Method.
Figure 6. Power Gain versus Output Power
45
−10
−20
VDD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
40
η , DRAIN EFFICIENCY (%)
D
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. 8 - VSB Performance (860 MHz)
−15
IDQ = 400 mA
−25
−30
800 mA
−35
1.2 A
−40
−45
−50
100
35
30
25
20
15
10
1.6 A
5
10
VDD = 32 Vdc
IDQ = 800 mA
f1 = 857 MHz
f2 = 863 MHz
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Drain Efficiency versus Output Power
MRF372R3 MRF372R5
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 875 MHz
Zload
f = 845 MHz
f = 875 MHz
Zsource
f = 845 MHz
VDD = 32 V, IDQ = 800 mA, Pout = 180 W PEP
f
MHz
Zsource
Ω
Zload
Ω
845
3.99 - j2.50
5.63 + j0.38
860
3.56 - j1.98
5.28 + j0.43
875
3.18 - j1.46
4.94 + j0.56
Harmonics
f
GHz
Zsource
Ω
Zload
Ω
1.69
2.85 + j14.30
1.23 + j9.37
1.72
3.27 + j14.32
1.54 + j9.60
1.75
3.35 + j14.36
1.73 + j9.62
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 9. Narrowband Series Equivalent Source and Load Impedance
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
7
GATE
VGG
L2
R6
DRAIN
R5
L3
R9A
R9B
VDD
+
C9
C8
+
R7
R3
R2
C7
C18
C17
C16
R4T
Figure 10. 470 - 860 MHz Broadband DC Bias Networks
Table 6. 470 - 860 MHz Broadband DC Bias Networks Component Designations and Values
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Designation
Description
C1
0.7 pF Chip Capacitor, ATC
C2, C13
0.8 — 8.0 pF Variable Capacitors, Johansen Gigatrim
C3A, B, C14A, B, C, D
100 pF Chip Capacitors, ATC
C4
4.7 pF,Chip Capacitor, ATC
C5
7.5 pF Chip Capacitor, ATC
C6
10.0 pF Chip Capacitor, ATC
C7A, B
6.2 pF Chip Capacitors, ATC
C8A, B
22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
C9A, B
0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT
C10
13 pF Chip Capacitor, ATC
C11
6.8 pF Chip Capacitor, ATC
C12
3.9 pF Chip Capacitor, ATC
C15A, B
3.3 pF Chip Capacitors, ATC
C16A, B
10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS
C17A, B
3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT
C18A, B
0.01 mF Chip Capacitors, ATC
L1A, B
12.55 nH, Coilcraft #1606 - 10
L2A, B
5.45 nH, Coilcraft #0906 - 5
L3A, B, C
12.5 nH, Coilcraft #A04T
R1A, B
10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R2A, B
2.2 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210)
R3A, B, R10A, B
390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206)
R4TA, B
520 Ω, Thermistor, Vishay #NTHS—1206J14520R5%
R5A, B
6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R6A, B
6.8 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210)
R7
100 kΩ Potentiometer, Bourns
R8
47.3 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206)
R9A, B, C, D
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
PCB
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils, εr = 3.48
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2
MRF372R3 MRF372R5
8
RF Device Data
Freescale Semiconductor
C8A
R6A
R8
C16A
R4TA
R2A
L2A
C9A
L1A
R3A
C7A
R1A
C17A
C18A
R9A
C5 C6
C10 C11 C12
C2
R1B
C15A
R10A
C14A
C4
C1
R9B
L3A
R5A
C3A
L3B
C3B
R5B
L1B
C9B
C7B
R6B
C8B
C13
L3C
R9C
L2B
R2B
R3B
C14B
R9D
C14C
C14D
C15B
C18B
R10B
C17B
C16B
R7 R4TB
MRF372
Rev. 1a
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 660 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil tab"
fits into the main PCB slot" resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 11. 470 - 860 MHz Broadband Component Layout
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
9
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
G ps, POWER GAIN (dB)
20
18
VDD = 32 Vdc
IDQ = 1000 mA
f1 − f2 = 6 MHz
16
Gps = 660 MHz
14
470 MHz
860 MHz
12
10
10
−10
−15
−20
VDD = 32 Vdc
IDQ = 1000 mA
f1 − f2 = 6 MHz
−25
−30
−40
660 MHz
−45
−50
100
860 MHz
IMD = 470 MHz
−35
10
Pout, OUTPUT POWER (WATTS) PEP
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Power Gain versus Output Power
Figure 13. Intermodulation Distortion versus
Output Power
45
VDD = 32 Vdc
IDQ = 1000 mA
f1 − f2 = 6 MHz
hD , DRAIN EFFICIENCY (%)
40
35
hD = 860 MHz
660 MHz
30
25
470 MHz
20
15
10
5
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 14. Drain Efficiency versus Output Power
MRF372R3 MRF372R5
10
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zo = 10 Ω
f = 860 MHz
f = 860 MHz
Zsource
Zload
f = 470 MHz
f = 470 MHz
VDD = 32 V, IDQ = 1000 mA, Pout = 180 W PEP
f
MHz
Zsource
Ω
Zload
Ω
470
4.46 - j2.57
4.88 - j3.50
560
6.40 + j1.06
5.45 - j0.07
660
7.84 + j0.14
8.13 + j0.73
760
6.67 + j0.46
8.27 - j1.00
860
6.25 + j0.31
7.52 + j0.02
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 15. Broadband Series Equivalent Source and Load Impedance
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
11
NOTES
MRF372R3 MRF372R5
12
RF Device Data
Freescale Semiconductor
NOTES
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
13
NOTES
MRF372R3 MRF372R5
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
4
G
ccc
R
T A
M
B
M
Q
bbb
2X
L
M
J
T A
M
M
B
M
(LID)
2
1
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
(FLANGE)
5
4X
S
(INSULATOR)
bbb
M
T A
K
3
4X
M
B
M
4
B
D
bbb
M
ccc
T A
M
M
B
T A
M
M
B
M
F
N
(LID)
E
M
H
bbb
A
C
(INSULATOR)
M
T A
M
B
M
A
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.2125 BSC
0.135
0.165
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
5.397 BSC
3.43
4.19
10.8 BSC
21.64
22.05
21.62
22.07
3.00
3.30
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375G - 04
ISSUE G
NI - 860C3
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
15
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF372R3 MRF372R5
Document Number: MRF372
Rev. 9, 5/2006
16
RF Device Data
Freescale Semiconductor