FDMA1028NZ tm Dual N-Channel PowerTrench® MOSFET General Description Features This device is designed specifically as a single package • 3.7 A, 20V. RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V solution for dual switching requirements in cellular handset and other ultra-portable applications. • Low profile – 0.8 mm maximum – in the new package It MicroFET 2x2 mm features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. • HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal • RoHS Compliant performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current ID TA=25oC unless otherwise noted – Continuous ±12 V A (Note 1a) 3.7 (Note 1a) 1.4 V 6 Power Dissipation for Single Operation (Note 1b) TJ, TSTG Units 20 – Pulsed PD Ratings Operating and Storage Junction Temperature Range Thermal Characteristics 0.7 –55 to +150 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) Package Marking and Ordering Information W °C °C/W Device Marking Device Reel Size Tape width Quantity 028 FDMA1028NZ 7’’ 8mm 3000 units ©2008 Fairchild Semiconductor Corporation FDMA1028NZ Rev B2 (W) FDMA1028NZ Dual N-Channel PowerTrench® MOSFET t March 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C Min Typ Max Units 20 V mV/°C 15 Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA Gate–Body Leakage VGS = ± 12 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge 1.0 1.5 V mV/°C –4 VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS= 4.5 V, ID = 3.7 A, TJ=125°C 37 50 53 VDS = 10 V, ID = 3.7 A 16 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 340 pF 80 pF 60 pF Dynamic Characteristics Ciss 0.6 68 86 90 mΩ (Note 2) VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 8 16 ns 8 16 ns Turn–Off Delay Time 14 26 ns Turn–Off Fall Time 3 6 ns 4 6 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 3.7 A, 0.7 nC 1.1 nC FDMA1028NZ Rev B2 (W) FDMA1028NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 1.1 A 0.7 (Note 2) IF = 3.7 A, dIF/dt = 100 A/µs Max Units 1.1 A 1.2 V 11 ns 2 nC Notes: 2 1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDMA1028NZ Rev B2 (W) FDMA1028NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics 5 ID, DRAIN CURRENT (A) 2.5V VGS = 4.5V 3.5V 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 3.0V 4 3 2 1 1.5V 0 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.4 2.5V 1.2 3.0V 3.5V 4.0V 1 0 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.4 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 1.2 Figure 1. On-Region Characteristics. 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.11 0.09 o 0.07 TA = 125 C 0.05 o TA = 25 C 0.03 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 5 4 3 2 o TA = 125 C -55oC 1 o 25 C 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 ID, DRAIN CURRENT (A) VGS = 2.0V 1.8 VGS = 0V 10 1 0.1 TA = 125oC 0.01 o 25 C 0.001 o -55 C 0.0001 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1028NZ Rev B2 (W) FDMA1028NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 500 VDS = 5V ID = 3.7A 8 400 CAPACITANCE (pF) 10V 6 4 300 Ciss 200 Coss 2 100 0 0 Crss 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RθJA = 173°C/W TA = 25°C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 173°C/W TA = 25°C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 P(pk), PEAK TRANSIENT POWER (W) 10 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 15V 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 RθJA(t) = r(t) * RθJA RθJA =173 °C/W D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1028NZ Rev B2 (W) FDMA1028NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics FDMA1028NZ Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout rev3 FDMA1028NZ Rev B2 (W) The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDMA1028NZ Rev B2 (W) FDMA1028NZ Dual N-Channel PowerTrench® MOSFET TRADEMARKS