FDMA1029PZ

FDMA1029PZ
Dual P-Channel PowerTrench“ MOSFET
General Description
Features
This device is designed specifically as a single package
„
x –3.1 A, –20V. RDS(ON) = 95 m: @ VGS = –4.5V
solution for the battery charge switch in cellular handset
RDS(ON) = 141 m: @ VGS = –2.5V
„
x Low profile – 0.8 mm maximum – in the new package
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses.
MicroFET 2x2 mm
When
x HBM ESD protection level > 2.5kV (Note 3)
„
connected in the typical common source configuration,
bi-directional current flow is possible.
x RoHS Compliant
„
The MicroFET 2x2 package offers exceptional thermal
„ Free from halogenated compounds and antimony
oxides
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1
D1
D2
D2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDS
Drain-Source Voltage
–20
V
VGS
Gate-Source Voltage
r12
V
A
Drain Current
ID
– Continuous
(Note 1a)
– Pulsed
–3.1
–6
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
W
1.4
0.7
qC
–55 to +150
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
173 (Single Operation)
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
69 (Dual Operation)
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
029
FDMA1029PZ
7’’
8mm
3000 units
”2009 Fairchild Semiconductor Corporation
FDMA1029PZ Rev.B4(W)
FDMA1029PZ Dual P-Channel PowerTrench“ MOSFET
July 2014
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = –250 PA
VGS = 0 V,
ID = –250 PA, Referenced to 25qC
–20
V
mV/qC
–12
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
PA
Gate–Body Leakage
VGS = ± 12 V,
VDS = 0 V
±10
PA
On Characteristics
(Note 2)
VGS(th)
'VGS(th)
'TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
ID = –250 PA
VDS = VGS,
ID = –250 PA, Referenced to 25qC
–0.6
–1.0
–1.5
V
mV/qC
4
VGS = –4.5 V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS= –4.5 V, ID = –3.1 A, TJ=125qC
60
88
87
VDS = –10 V,
ID = –3.1 A
–11
S
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
540
pF
120
pF
100
pF
95
141
140
m:
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
37
59
ns
tf
Turn–Off Fall Time
36
58
ns
Qg
Total Gate Charge
7.0
10
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
VGS = –4.5 V
ID = –3.1 A,
13
24
ns
11
20
ns
1.1
nC
2.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Source–Drain Diode Forward Current
VSD
trr
Source–Drain Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = –1.1 A
IF = –3.1 A,
dIF/dt = 100 A/µs
(Note 2)
–0.8
-1.1
A
–1.2
V
25
ns
9
nC
FDMA1029PZ Rev.B4(W)
FDMA1029PZ Dual P-Channel PowerTrench“ MOSFET
Electrical Characteristics
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the
user's board design.
(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a)86 oC/W when
mounted on a 1
in2 pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA1029PZ Rev.B4(W)
6
2.6
VGS =
4 5V
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
5
2.5V
2.0V
3.0V
4
3
2
1
1.5V
0
1.8
-2.5V
1.4
-3.0V
-3.5V
1
0.4
0.8
1.2
1.6
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
0
Figure 1. On-Region Characteristics.
-4.5V
1
2
3
4
-ID, DRAIN CURRENT (A)
5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
1.5
1.4
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.1A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
ID = -1.55A
0.16
0.12
o
TA = 125 C
0.08
o
TA = 25 C
0.04
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
0
Figure 3. On-Resistance Variation with
Temperature.
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
6
100
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
5
-ID, DRAIN CURRENT (A)
-4.0V
0.6
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.0V
2.2
4
3
2
o
TA = 125 C
o
-55 C
1
25oC
0
10
1
TA = 125oC
0.1
25oC
0.01
o
-55 C
0.001
0.0001
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1029PZ Rev.B4(W)
FDMA1029PZ Dual P-Channel PowerTrench“ MOSFET
Typical Characteristics
1000
f = 1MHz
VGS = 0 V
ID = -3.1A
800
8
VDS = -5V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-15V
6
-10V
4
600
Ciss
400
Coss
2
200
0
0
Crss
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
12
14
0
Figure 7. Gate Charge Characteristics.
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
10
100us
1ms
10ms
100ms
1
10s
1s
DC
VGS = -4.5V
SINGLE PULSE
o
RTJA = 173 C/W
0.1
TA = 25oC
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
50
SINGLE PULSE
RTJA = 173°C/W
TA = 25°C
40
30
20
10
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA =173 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1029PZ Rev.B4(W)
FDMA1029PZ Dual P-Channel PowerTrench“ MOSFET
Typical Characteristics
FDMA1029PZ Dual P-Channel PowerTrench“ MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06
FDMA1029PZ Rev.B4(W)
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
FDMA1029PZ Rev.B4(W)
FDMA1029PZ Dual P-Channel PowerTrench“ MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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