Power-SPMTM FP7G100US60 tm Transfer Molded Type IGBT Module General Description Fairchild’s New IGBT Modules ( Transfer Molded Type ) provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor control, Uninterrupted Power Supplies (UPS) and general Inverters where short circuit ruggedness is a required feature. Features • Short Circuit rated 10us @Tc=100°C, Vge=15V • High Speed Switching • Low Saturation Voltage : Vce(sat) =2.2V @Ic=100A Package Code : EPM7 • High Input Impedance • Fast & Soft Anti-Parallel FWD 1 Application 2 3 • Welders • AC & DC Motor Controls • General Purpose Inverters 4 • Robotics 5 6 7 • Servo Controls • UPS Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 ©2008 Fairchild Semiconductor Corporation FP7G100US60 Rev. A @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute 1 Rating 600 ± 20 100 200 100 200 10 400 -40 to +125 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module July 2008 FP7G100US60 Transfer Molded Type IGBT Module Pin Configuration and Pin Description Top View 1 2 3 4 5 6 7 Internal Circuit Diagram Pin Description FP7G100US60 Rev. A Pin Number Pin Description 1 Emitter of Q1, IGBT, Collector of Q2, IGBT 2 Emitter of Q2, IGBT 3 Collector of Q1, IGBT 4 Gate of Q1, IGBT 5 Emitter of Q1, IGBT 6 Gate of Q2, IGBT 7 Emitter of Q2, IGBT 2 www.fairchildsemi.com Symbol Unless Otherwise Specified) Parameter Conditions Min Typ Max Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage ∆BVCES/ ∆TJ VGE= 0V, IC = 250µA 600 - - V Temperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA - 0.6 - V ICES Collector Cut-off Current VCE= VCES, VGE= 0V - - 250 uA IGES Gate-Emitter Leakage Current VGE= VGES, VCE= 0V - - ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage VGE = 0V, IC=100mA 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 100A, VGE = 15V - 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Capacitance VCE = 30V, VGE = 0V, f = 1MHz 6085 pF 725 pF 135 pF Switching Characteristics td(on) Turn-On Delay Time - 34 - ns tr Rise Time - 24 - ns td(off) Turn-Off Delay Time - 98 - ns tf Fall Time - 45 - ns Eon Turn-On Switching Loss - 0.54 - mJ Eoff Turn-Off Switching Loss - 1.26 - mJ Ets Total Switching Loss - 1.8 - mJ td(on) Turn-On Delay Time - 33 - ns tr Rise Time - 28 - ns td(off) Turn-Off Delay Time - 101 - ns tf Fall Time - 171 - ns Eon Turn-On Switching Loss - 1.12 - mJ Eoff Turn-Off Switching Loss - 3.18 - mJ Ets Total Switching Loss - 4.3 - mJ Tsc Short Circuit Withstand Time 10 - - us Qg Total Gate Charge - 283 - nC Qge Gate-Emitter Charge - 50 - nC Qgc Gate-Collector Charge - 155 - nC FP7G100US60 Rev. A VCC = 300 V, IC = 100A, RG = 2.4Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 100A, RG = 2.4Ω, VGE = 15V Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V @ TC = 100°C VCE = 300 V, IC = 100A, VGE = 15V 3 www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Electrical Characteristics (TJ = 25°C, Symbol VFM trr Parameter Unless Otherwise Specified) Conditions Diode Forward Voltage IF = 100A Min Typ Max Units TC = 25°C - 1.9 2.8 TC = 100°C - 1.8 - TC = 25°C - 85 125 TC = 100°C - 150 - TC = 25°C - 8 11 TC = 100°C - 13 - TC = 25°C - 325 635 TC = 100°C - 965 - V Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr ns IF = 100A di / dt = 200 A/us A Diode Reverse Recovery Charge nC Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) - 0.25 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) - 0.7 °C/W RθCS Case-to-Sink 0.05 - °C/W Weight Weight of Module - 90 g FP7G100US60 Rev. A (Conductive grease applied) 4 www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Electrical Characteristics of DIODE (TJ = 25°C, Fig 2. Typical Saturation Voltage Characteristics Fig 1. Typical Output Characteristics 250 IC, Collector Current[A] IC, Collector Current[A] 240 15V 200 12V 20V 160 120 V GE = 10V 80 40 Common Emitter o TC = 25 C 0 0 2 4 6 200 Common Emitter VGE = 15V o TC = 25 C o TC = 125 C 150 100 50 0 0.3 8 V CE , Collector-Emitter Voltage[V] 20 Fig 4. Load Current vs. Frequency 120 5 V CC = 300V Load Current : peak of square wave Com m on Em itter V G E = 15V Load Current [A] 100 4 200A 3 100A 2 I C = 50A 1 80 60 40 20 0 0 50 100 Duty cycle : 50% o T C = 100 C Power Dissipation = 130W 0 0.1 150 1 o VCE, Collector-Emitter Voltage[V] 20 Common Emitter o TC = 25 C 12 8 200A 4 100A IC = 50A 0 0 4 8 12 16 20 VGE, Gate-Emitter Voltage[V] FP7G100US60 Rev. A 100 1000 Fig 6. Saturation Voltage vs. VGE Fig 5. Saturation Voltage vs. VGE 16 10 Frequency [Khz] T C , Case Tem perature[ C] VCE, Collector-Emitter Voltage[V] 10 VCE, Collector-Emitter Voltage[V] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level VCE, Collector-Emitter Voltage[V] 1 20 Common Emitter o TC = 25 C 16 12 8 200A 4 100A IC = 50A 0 0 4 8 12 16 20 VGE, Gate-Emitter Voltage[V] 5 www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Typical Performance Characteristics 12000 1000 Common Emitter VGE = 0V, f = 1MHz 8000 Coes Cres 4000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A o TC = 25 C Switching Time[ns] Capacitance[pF] Cies Fig 8. Turn-On Characteristics vs. Gate Resistance o TC = 25 C Tr 100 10 0 0.5 1 10 1 30 10 RG, Gate Resistance[Ω ] VCE, Collector-Emitter Voltage[V] Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Fig 10. Switching Loss vs. Gate Resistance 100 Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A Switching Loss[mJ] Switching Time[ns] 3000 Ton o TC = 125 C Toff o TC = 25 C o TC = 125 C Tf 100 Tf 30 6 10 Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A o TC = 25 C 10 o TC = 125 C Eon Eoff 1 0.1 100 1 10 RG, Gate Resistance[Ω ] RG, Gate Resistance[Ω ] Fig 12. Turn-Off Characteristics vs. Collector Current Fig 11. Turn-On Characteristics vs. Collector Current 1000 o 100 TC = 25 C o TC = 125 C Switching Time[ns] Switching Time[ns] Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A Ton Tr 10 1 20 FP7G100US60 Rev. A 40 1000 6 o TC = 25 C o TC = 125 C Toff Tf 100 Tf 10 20 60 80 100 120 140 IC, Collector Current[A] Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A 40 60 80 100 120 140 IC, Collector Current[A] www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Fig 7. Capacitance Characteristics 15 Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A VGE, Gate-Emitter Voltage[V] Switching Loss[mJ] 100 o TC = 25 C 10 o TC = 125 C Eoff 1 Eon 0.1 20 40 300 V 12 200 V 9 V CC = 100 V 6 3 Common Emitter RL = 3 Ω o T C = 25 C 0 0 60 80 100 120 140 IC, Collector Current[A] 100 200 300 400 Q g, Gate Charge[nC] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 500 100 IC MAX. (Continuous) IC, Collector Current[A] IC, Collector Current[A] IC MAX. (Pulsed) 50us 100us 1ms 10 DC Operation 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linerarly with increase in temperature 0.1 0.3 1 10 100 100 10 1 1000 1 100 1000 Fig 18. Transient Thermal Impedance Fig 17. RBSOA Characteristics 1 o Thermal Response, Zthjc[ C/W] 600 IC, Collector Current[A] 10 VCE, Collector-Emitter Voltage[V] VCE, Collector-Emitter Voltage[V] 100 10 1 0.1 Safe Operating Area o VGE = 20V, TC = 100 C Single Nonrepetitive o Pulse TJ = 125 C VGE = 15V RG = 2.4 Ω 0 100 200 300 400 500 600 700 VCE, Collector-Emitter Voltage[V] FP7G100US60 Rev. A 7 0.1 0.01 o 1E-3 -5 10 TC = 25 C IGBT : DIODE : -4 -3 -2 -1 0 10 10 10 10 10 10 Rectangular Pulse Duration[sec] 1 www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Irr, Peak Reverse Recovery Current[A] Trr, Reverse Recovery Time[x10ns] IF, Forward Current[A] 300 Fig 20. Reverse Recovery Characteristics Common Cathode VGE = 0V 250 o TC = 25 C o TC = 125 C 200 150 100 50 0 0 1 2 3 4 VF, Forward Voltage[V] FP7G100US60 Rev. A 8 20 Trr Irr 10 Trr Irr Common Cathode di/dt = 200A/us o TC = 25 C o TC = 100 C 3 0 20 40 60 80 100 IF, Forward Current[A] www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Fig 19. Forward Characteristics 16.22±0.50 5.08±0.50 1.00±0.10 5 4 0) 1.0 (R 80.00±0.30 0 (9 1. 65 ) 9.60±0.10 12.20±0.30 (10.00) (10.00) (14.00) (9.00) (14.00) (9.00) (14.00) (6.50) 10.40±0.30 ) 12.20±0.30 ° (7 °) (R 93.00±0.50 (6.50) 38.80±1.00 6 35.00±0.50 7 25.00±0.20 3 17.50±0.30 2 10.00±0.50 1 14.50+0.50 -0.80 (5°) (R 2.7 5) 10.00±0.10 18.40±0.50 0.80+0.10 -0.05 23.00±0.50 (14°) 23.00±0.50 (14°) 23.50±0.50 (5°) FP7G100US60 Rev. A 9 www.fairchildsemi.com FP7G100US60 Transfer Molded Type IGBT Module Detailed Package Outline Drawings TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com