FGB5N60UNDF tm 600V, 5A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description • High input impedance Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential. • Fast switching • RoHS compliant C COLLECTOR (FLANGE) G C E TO-263AB/D2-PAK G E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC Collector Current @ TC = 25oC Collector Current @ TC = 100oC Units 600 V ± 20 V 10 A 5 A @ TC = 25 C 15 A Diode Forward Current @ TC = 25oC 5 A Maximum Power Dissipation @ TC = 25oC 73.5 W Maximum Power Dissipation o ICM (1) Pulsed Collector Current IF PD Ratings o 29.4 W TJ Operating Junction Temperature @ TC = 100 C -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2012 Fairchild Semiconductor Corporation FGB5N60UNDF Rev. A 1 www.fairchildsemi.com FGB5N60UNDF 600V, 5A Short Circuit Rated February 2012 Symbol RθJC(IGBT) Parameter Typ. Max. Thermal Resistance, Junction to Case Units 1.7 o C/W C/W RθJC(Diode) Thermal Resistance, Junction to Case 4.5 o RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 40 oC/W Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) Package Marking and Ordering Information Device Marking Device Package FGB5N60UNDF FGB5N60UNDF TO-263AB/D2-PAK Electrical Characteristics of the IGBT Symbol Parameter Rel Size Tape Width Quantity - 50 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 uA 5.5 6.8 8.5 V IC = 5A, VGE = 15V - 1.9 2.4 V IC = 5A, VGE = 15V, TC = 125oC - 2.3 - V - 181 pF - 28 pF - 7 pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 5mA, VCE = VGE Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 5.4 ns tr Rise Time - 1.9 ns td(off) Turn-Off Delay Time tf Fall Time - 25.4 - 101 Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.08 mJ - 0.07 mJ Ets td(on) Total Switching Loss - 0.15 mJ Turn-On Delay Time - 5.2 ns VCC = 400V, IC = 5A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC ns 202 ns tr Rise Time - 2.3 ns td(off) Turn-Off Delay Time - 26.6 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets Tsc Short Circuit Withstand Time VCC = 400V, IC = 5A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC - 125 ns - 0.15 mJ Turn-Off Switching Loss - 0.09 mJ Total Switching Loss - 0.24 mJ 10 - FGB5N60UNDF Rev. A VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 - µs www.fairchildsemi.com FGB5N60UNDF 600V, 5A Short Circuit Rated Thermal Characteristics Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 5A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 5A Diode Reverse Recovery Charge FGB5N60UNDF Rev. A 12.1 nC 1.7 nC - 7.2 nC TC = 25°C unless otherwise noted IF =5A, dIF/dt = 200A/µs Qrr - Min. Typ. Max TC = 25oC - 1.7 2.2 TC = 125oC - 1.6 - TC = 25oC - 35 o TC = 125 C - 87 TC = 25oC - 71 - 240 TC = 3 125oC Units V ns nC - www.fairchildsemi.com FGB5N60UNDF 600V, 5A Short Circuit Rated Electrical Characteristics of the IGBT FGB5N60UNDF 600V, 5A Short Circuit Rated Typical Performance Characteristics Figure 1. Typical Output Characteristics 30 o TC = 25 C 20V Figure 2. Typical Output Characteristics 30 17V o TC = 125 C 20V 17V Collector Current, IC [A] Collector Current, IC [A] 15V 20 VGE = 12V 10 0 0.0 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 15V 20 VGE = 12V 10 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 20 20 Common Emitter VGE = 15V Common Emitter VCE = 20V Collector Current, IC [A] Collector Current, IC [A] o TC = 25 C 15 o TC = 125 C 10 5 o 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 5 0 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 2.5 1.0 25 5A IC = 2.5A o TC = 25 C 16 4 10A 12 5A 8 IC = 2.5A 4 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGB5N60UNDF Rev. A 15 Common Emitter 10A 1.5 3 6 9 12 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 2.0 0 Figure 6. Saturation Voltage vs. VGE 3.5 3.0 o TC = 125 C 10 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level TC = 25 C 15 0 0 9.0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 1000 20 o TC = 125 C 16 Cies 10A Capacitance [pF] Collector-Emitter Voltage, VCE [V] Common Emitter 12 5A 8 Coes 100 Cres 10 IC = 2.5A Common Emitter VGE = 0V, f = 1MHz 4 o TC = 25 C 0 1 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 20 400V 12 100µs 1ms Collector Current, Ic [A] VCC = 100V 9 6 3 10µs 10 200V 10 ms DC 1 *Notes: o 1. TC = 25 C o Common Emitter 0 0 2. TJ = 150 C 3. Single Pulse 0.1 o TC = 25 C 5 10 Gate Charge, Qg [nC] 0.05 15 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 100 1000 Common Emitter VCC = 400V, VGE = 15V IC = 5A o tf TC = 25 C o TC = 125 C 100 Switching Time [ns] Switching Time [ns] 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] 1 tr 10 td(on) td(off) Common Emitter VCC = 400V, VGE = 15V IC = 5A 10 o TC = 25 C o TC = 125 C 1 0 10 FGB5N60UNDF Rev. A 20 30 40 Gate Resistance, RG [Ω ] 1 50 5 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 www.fairchildsemi.com FGB5N60UNDF 600V, 5A Short Circuit Rated Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 10 1000 tf Switching Time [ns] Switching Time [ns] td(on) tr 1 Common Emitter VGE = 15V, RG =10Ω 100 td(off) 10 Common Emitter VGE = 15V, RG = 10Ω o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 0.1 2 4 6 8 1 10 2 4 Collector Current, IC [A] 6 8 10 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 1000 Common Emitter VCC = 400V, VGE = 15V IC = 5A Switching Loss [uJ] Switching Loss [uJ] o TC = 25 C o TC = 125 C Eon 100 Eon 100 Eoff Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 125 C Eoff 50 10 0 10 20 30 40 50 2 4 6 8 10 Collector Current, IC [A] Gate Resistance, RG [Ω ] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 20 30 Forward Current, IF [A] Collector Current, IC [A] 10 10 o TC = 125 C o TC = 75 C Safe Operating Area o TC = 25 C o VGE = 15V, TC = 125 C 1 1 10 100 1 1000 Collector-Emitter Voltage, VCE [V] FGB5N60UNDF Rev. A 6 0 1 2 3 4 Forward Voltage, VF [V] 5 www.fairchildsemi.com FGB5N60UNDF 600V, 5A Short Circuit Rated Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 0.25 Stored Recovery Charge, Qrr [uC] Reverse Recovery Currnet, Irr [uA] 100 o TC = 125 C 10 1 o TC = 75 C 0.1 0.01 o TC = 25 C 0.001 0 150 300 VR [V] 450 o TC = 25 C o 200A/µs 0.15 di/dt = 100A/µs 0.10 200A/µs 0.05 di/dt = 100A/µs 0.00 600 TC = 125 C 0.20 0 1 2 3 Forwad Current, IF [A] 4 5 Figure 21. Reverse Recovery Time 120 Reverse Recovery Time, trr [ns] o di/dt = 100A/µs TC = 25 C o TC = 125 C 90 200A/µs 60 di/dt = 100A/µs 30 0 200A/µs 0 1 2 3 4 5 Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] FGB5N60UNDF Rev. A 7 www.fairchildsemi.com FGB5N60UNDF 600V, 5A Short Circuit Rated Typical Performance Characteristics FGB5N60UNDF 600V, 5A Short Circuit Rated Mechanical Dimensions TO-263AB/D2_PAK FGB5N60UNDF Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I58 FGB5N60UNDF Rev. A 9 www.fairchildsemi.com