FGPF15N60UNDF 600V, 15A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Air Condtioner, Washing Machine, Refrigerator, Dish Washer Features • Industrial Inverter - Sewing Machine, CNC • Short circuit rated 10us • High current capability • High input impedance General Description • Fast switching • RoHS compliant Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential. C G G C E TO-220F E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V 25oC Collector Current @ TC = 30 A Collector Current @ TC = 100oC 15 A ICM (1) Pulsed Collector Current @ TC = 25oC 45 A IF Diode Forward Current @ TC = 25oC 15 A IC PD TJ 25oC Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 100oC Operating Junction Temperature Tstg Storage Temperature Range 42 W 17 W -55 to +150 o -55 to +150 oC C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Typ. Max. Units RθJC(IGBT) Symbol Thermal Resistance, Junction to Case Parameter - 3.0 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 4.9 oC/W RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 62.5 o C/W Notes: 2: Mountde on 1” square PCB (FR4 or G-10 material) ©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev.C0 1 www.fairchildsemi.com FGPF15N60UNDF 600V, 15A Short Circuit Rated May 2012 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF15N60UNDF FGPF15N60UNDF TO-220F Tube 50ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250µA 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 µA IC = 15mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 5.5 6.8 8.5 V IC = 15A, VGE = 15V - 2.2 2.7 V IC = 15A, VGE = 15V, TC = 125oC - 2.7 - V - 619 - pF - 80 - pF - 24 - pF - 9.3 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 9.8 - ns td(off) Turn-Off Delay Time - 54.8 - ns tf Fall Time - 9.9 12.8 ns Eon Turn-On Switching Loss - 0.37 - mJ Eoff Turn-Off Switching Loss - 0.067 - mJ Ets Total Switching Loss - 0.44 - mJ td(on) Turn-On Delay Time - 8.9 - ns tr Rise Time - 9.9 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Tsc Short Circuit Withstand Time FGPF15N60UNDF Rev.C0 VCC = 400V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 - 56.6 - ns - 13.2 - ns - 0.54 - mJ - 0.11 - mJ - 0.65 - mJ 10 - - µs www.fairchildsemi.com FGPF15N60UNDF 600V, 15A Short Circuit Rated Package Marking and Ordering Information Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 15A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 15A - nC 6 - nC - 26 - nC Min. Typ. Max TC = 25oC - 1.6 2.2 TC= 125oC - 1.5 - TC = 25oC - 82.4 TC= 125 C - 142 - TC = 25oC - 213 - - 541 - o Diode Reverse Recovery Charge FGPF15N60UNDF Rev.C0 43 TC = 25°C unless otherwise noted IF =15A, dIF/dt = 200A/µs Qrr - TC= 3 125oC Units V ns nC www.fairchildsemi.com FGPF15N60UNDF 600V, 15A Short Circuit Rated Electrical Characteristics of the IGBT FGPF15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics Figure 1. Typical Output Characteristics 80 o TC = 25 C 20V 80 17V 60 50 VGE = 12V 40 30 20 10 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 17V 15V 60 50 VGE = 12V 40 30 20 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 Figure 4. Transfer Characteristics 80 80 70 Common Emitter VGE = 15V 60 TC = 25 C Common Emitter 70 VCE = 20V o TC = 25 C o Collector Current, IC [A] Collector Current, IC [A] 20V 10 0 0.0 o TC = 125 C 50 40 30 20 10 60 o TC = 125 C 50 40 30 20 10 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 4.0 30A 3.5 3.0 15A 2.5 2.0 IC = 7.5A 1.5 1.0 25 3 6 9 12 Gate-Emitter Voltage,VGE [V] 4 Common Emitter o TC = 25 C 16 12 8 15A 30A 4 IC = 7.5A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF15N60UNDF Rev.C0 15 Figure 6. Saturation Voltage vs. VGE 4.5 Collector-Emitter Voltage, VCE [V] o TC = 125 C 70 15V Collector Current, IC [A] Collector Current, IC [A] 70 Figure 2. Typical Output Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com Figure 7. Saturation Voltage vs. VGE 20 Figure 8. Capacitance Characteristics 3000 Common Emitter Collector-Emitter Voltage, VCE [V] o TC = 25 C Cies 1000 Coes Capacitance [pF] 16 12 8 15A Cres 100 Common Emitter VGE = 0V, f = 1MHz 30A 4 IC = 7.5A 0 4 o TC = 25 C 8 12 16 Gate-Emitter Voltage, VGE [V] 10 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 100 15 10µs 12 400V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 200V VCC = 100V 9 6 3 10 100µs 1ms 1 10 ms Common Emitter o TC = 25 C 0.01 0 0 5 10 15 20 25 30 35 Gate Charge, Qg [nC] 40 45 1 50 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 50 Common Emitter VCC = 400V, VGE = 15V IC = 15A 40 30 o Switching Time [ns] Switching Time [ns] DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 20 tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 15A TC = 25 C td(off) o TC = 125 C 100 tf o TC = 25 C 10 o TC = 125 C 5 0 10 20 30 40 Gate Resistance, RG [Ω ] FGPF15N60UNDF Rev.C0 50 0 60 10 20 30 40 50 60 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGPF15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 50 300 Common Emitter VGE = 15V, RG = 10Ω o 10 td(on) Common Emitter VGE = 15V, RG = 10Ω tr 100 Switching Time [ns] Switching Time [ns] TC = 25 C o o TC = 125 C td(off) tf TC = 25 C 10 o TC = 125 C 1 0 5 10 15 20 25 30 5 35 0 5 Collector Current, IC [A] 10 15 20 25 30 Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 3000 Eon Eon Switching Loss [uJ] Switching Loss [µJ] 1000 Eoff 100 Common Emitter VCC = 400V, VGE = 15V IC = 15A Eoff 100 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 25 C o TC = 125 C 10 o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [Ω] 50 60 0 5 10 15 20 25 30 35 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 100 30 Forward Current, IF [A] Collector Current, IC [A] 35 Collector Current, IC [A] 10 10 o o TJ = 125 C TJ = 75 C o TJ = 25 C Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 1 1000 0 Collector-Emitter Voltage, VCE [V] FGPF15N60UNDF Rev.C0 6 1 2 Forward Voltage, VF [V] 3 www.fairchildsemi.com FGPF15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 100 0.7 o TC = 25 C o Stored Recovery charge, Qrr [ns] TJ = 125 C Reverse Current , IR [µA] 10 1 o TJ = 75 C 0.1 o 0.01 TJ = 25 C 1E-3 50 200 400 Reverse Voltage, VR [V] 0.6 TC = 125oC 200A/µs 0.5 0.4 0.3 di/dt = 100A/µs 0.2 200A/µs 0.1 di/dt = 100A/µs 0.0 600 0 2 4 6 8 10 12 14 16 18 20 Forward Current, IF [A] Figure 21. Reverse Recovery Time 200 Stored Recovery Charge, trr [nC] o TC = 25 C di/dt = 100A/µs o TC = 125 C 150 200A/µs di/dt = 100A/µs 100 200A/µs 50 0 0 2 4 6 8 10 12 14 16 18 20 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT 5 0.5 Thermal Response [Zthjc] Thermal Response [Zthjc] 1 0.5 0.2 1 0.2 0.1 0.1 0.1 0.05 0.05 0.02 PDM t1 0.1 0.01 0.02 t2 PDM Factor, D = t1/t2 Duty Peak Tj =tPdm x Zthjc + TC single 0.01 pulse 0.01 0.01 single pulse 1E-5 1E-4 1 t2 1E-3 0.01 0.1 Duty Factor,1D = t1/t2 10 Peak Tj = Pdm x Zthjc + TC 0.005 -5 10 Rectangular Pulse Duration [sec] -4 10 -3 -2 10 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] FGPF15N60UNDF Rev.C0 7 www.fairchildsemi.com FGPF15N60UNDF 600V, 15A Short Circuit Rated Typical Performance Characteristics FGPF15N60UNDF 600V, 15A Short Circuit Rated Mechanical Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2700V FGPF15N60UNDF Rev.C0 8 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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