FAIRCHILD FGPF10N60UNDF

FGPF10N60UNDF
600V, 10A
Short Circuit Rated IGBT
Applications
• Home appliance inverter-driven appplication
- Air Conditioner, Washing Machine, Refrigerator,
Dish Washer
Features
• Industrial Inverter - Sewing Machine, CNC
• Short circuit rated 10us
• High current capability
• High input impedance
General Description
• Fast switching
• RoHS compliant
Using advanced NPT IGBT Technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential.
C
G
G C E
TO-220F
E
(Retractable)
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
25oC
Collector Current
@ TC =
Collector Current
@ TC = 100oC
ICM (1)
Pulsed Collector Current
@ TC = 25oC
30
A
IF
Diode Forward Current
@ TC = 25oC
10
A
Maximum Power Dissipation
@ TC = 25oC
42
W
Maximum Power Dissipation
@ TC = 100oC
17
W
IC
PD
20
A
10
A
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
Parameter
Thermal Resistance, Junction to Case
Typ.
Max.
-
3.0
Units
o
C/W
C/W
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
5.6
o
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
-
62.5
o
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGPF10N60UNDF Rev.C0
1
www.fairchildsemi.com
FGPF10N60UNDF 600V, 10A Short Circuit Rated
May 2012
Device Marking
Device
Package
Packaging
Type
Qty per Tube
Max Qty
per Box
FGPF10N60UNDF
FGPF10N60UNDF
TO-220F
Tube
50ea
-
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250µA
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±10
uA
IC = 10mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
5.5
6.8
8.5
V
IC = 10A, VGE = 15V
-
2
2.45
V
IC = 10A, VGE = 15V,
TC = 125oC
-
2.3
-
V
-
517
pF
-
65
pF
-
20
pF
-
8.0
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
6.3
ns
td(off)
Turn-Off Delay Time
-
52.2
ns
tf
Fall Time
-
19.1
Eon
Turn-On Switching Loss
-
0.15
mJ
Eoff
Turn-Off Switching Loss
-
0.05
mJ
Ets
Total Switching Loss
-
0.2
mJ
td(on)
Turn-On Delay Time
-
8.1
ns
tr
Rise Time
-
7.3
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
Tsc
Short Circuit Withstand Time
FGPF10N60UNDF Rev.C0
VCC = 400V, IC = 10A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 10A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCC = 350V,
RG = 100Ω, VGE = 15V,
TC = 150oC
2
24.8
ns
-
55.1
ns
-
34.2
ns
-
0.22
mJ
-
0.08
mJ
-
0.3
mJ
10
-
-
µs
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FGPF10N60UNDF 600V, 10A Short Circuit Rated
Package Marking and Ordering Information
Symbol
Qg
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 10A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Typ.
-
37
Max
Units
nC
-
5
nC
-
21
nC
Min.
Typ.
Max
-
1.8
2.2
-
1.7
TC = 25°C unless otherwise noted
Test Conditions
TC =
IF = 10A
25oC
TC = 125oC
IF = 10A, dIF/dt = 200A/µs
FGPF10N60UNDF Rev.C0
Min.
3
TC = 25oC
-
37.7
TC = 125oC
-
78.9
TC = 25oC
-
75
TC = 125oC
-
221
Units
V
ns
nC
www.fairchildsemi.com
FGPF10N60UNDF 600V, 10A Short Circuit Rated
Electrical Characteristics of the IGBT
FGPF10N60UNDF 600V, 10A Short Circuit Rated
TTypical Performance Characteristics
Figure 1. Typical Output Characteristics
80
80
o
TC = 25 C
70
20V
17V
60
50
40
VGE = 12V
30
20
17V
15V
60
50
40
VGE = 12V
30
20
10
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
6
8
Collector-Emitter Voltage, VCE [V]
10
Figure 4. Transfer Characteristics
60
60
Common Emitter
VGE = 15V
50
o
TC = 125 C
40
Common Emitter
VCE = 20V
50
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
20V
70
10
30
20
10
o
TC = 25 C
o
TC = 125 C
40
30
20
10
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
0
6
0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
3.5
3
6
9
12
Gate-Emitter Voltage,VGE [V]
20A
3.0
2.5
15
Figure 6. Saturation Voltage vs. VGE
4.0
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
15V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
10A
2.0
IC = 5A
1.5
Common Emitter
o
TC = 25 C
16
12
8
10A
4
20A
IC = 5A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGPF10N60UNDF Rev.C0
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
3000
Common Emitter
o
TC = 125 C
12
8
10A
Coes
Cres
100
Common Emitter
VGE = 0V, f = 1MHz
20A
4
IC = 5A
0
4
o
TC = 25 C
8
12
16
Gate-Emitter Voltage, VGE [V]
10
20
1
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
15
100
200V
12
VCC = 100V
10µs
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
Cies
1000
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
20
Figure 8. Capacitance Characteristics
400V
9
6
3
10
100µs
1ms
1
10 ms
*Notes:
0.1
o
o
2. TJ = 150 C
3. Single Pulse
TC = 25 C
0
0
5
10
15 20 25 30 35
Gate Charge, Qg [nC]
40
45
DC
o
1. TC = 25 C
Common Emitter
0.01
50
1
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
50
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
tr
10
Switching Time [ns]
Switching Time [ns]
o
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
TC = 25 C
o
TC = 125 C
td(off)
100
tf
o
TC = 25 C
o
TC = 125 C
10
1
0
10
20
30
40
Gate Resistance, RG [Ω ]
FGPF10N60UNDF Rev.C0
50
0
60
10
20
30
40
50
60
Gate Resistance, RG [Ω]
5
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FGPF10N60UNDF 600V, 10A Short Circuit Rated
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
30
300
Common Emitter
VGE = 15V, RG = 10Ω
o
10
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
tr
100
Switching Time [ns]
Switching Time [ns]
TC = 25 C
o
o
TC = 125 C
td(off)
tf
TC = 25 C
10
o
TC = 125 C
1
0
5
10
15
20
5
25
0
5
Collector Current, IC [A]
10
15
20
25
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
Collector Current
1000
1000
Eon
100
Switching Loss [uJ]
Switching Loss [µJ]
Eon
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
Eoff
100
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
10
o
TC = 25 C
o
TC = 125 C
o
TC = 125 C
5
0
10
20
30
40
Gate Resistance, RG [Ω]
50
10
60
0
5
10
15
20
25
Collector Current, IC [A]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
30
Forward Current, IF [A]
Collector Current, IC [A]
50
10
10
o
TJ = 125 C
o
TJ = 75 C
o
TJ = 25 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1
1000
0
Collector-Emitter Voltage, VCE [V]
FGPF10N60UNDF Rev.C0
6
1
2
Forward Voltage, VF [V]
3
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FGPF10N60UNDF 600V, 10A Short Circuit Rated
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
100
0.3
o
TC = 25 C
o
Stored Recovery charge, Qrr [ns]
TJ = 125 C
Reverse Current , IR [µA]
10
o
1
TJ = 75 C
0.1
o
TJ = 25 C
0.01
1E-3
50
200
400
Reverse Voltage, VR [V]
o
TC = 125 C
200A/µs
0.2
di/dt = 100A/µs
0.1
200A/µs
di/dt = 100A/µs
0.0
600
0
2
4
6
8
10
12
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
100
Stored Recovery Charge, trr [nC]
o
TC = 25 C
di/dt = 100A/µs
o
TC = 125 C
80
200A/µs
60
di/dt = 100A/µs
40
200A/µs
20
0
0
2
4
6
8
10
12
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
Thermal
Response
[Zthjc]
Thermal
Response
[Zthjc]
1
5
0.5
0.5
1 0.20.2
0.10.10.1
0.05
0.05
PDM
0.1 0.02
0.02
0.01
1E-5
0.005
-5
10
1E-4
-4
10
t1
PDM
0.01
0.01
single pulse
0.01 single pulse
1E-3
0.01
t2
Duty Factor,
t1 D = t1/t2
t2 x Zthjc + T
Peak Tj = Pdm
C
Duty Factor, D = t1/t2
Peak
T
=
Pdm
x
Zthjc
+
T
0.1
1
j
C 10
Rectangular
Pulse
Duration -1[sec]
-3
-2
10
10
10
0
10
1
10
Rectangular Pulse Duration [sec]
FGPF10N60UNDF Rev.C0
7
www.fairchildsemi.com
FGPF10N60UNDF 600V, 10A Short Circuit Rated
Typical Performance Characteristics
FGPF10N60UNDF 600V, 10A Short Circuit Rated
Mechanical Dimensions
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2700V
FGPF10N60UNDF Rev.C0
8
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
9
FGPF10N60UNDF Rev.C0
www.fairchildsemi.com
FGPF10N60UNDF 600V, 15A Short Circuit Rated
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