FGPF10N60UNDF 600V, 10A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Air Conditioner, Washing Machine, Refrigerator, Dish Washer Features • Industrial Inverter - Sewing Machine, CNC • Short circuit rated 10us • High current capability • High input impedance General Description • Fast switching • RoHS compliant Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential. C G G C E TO-220F E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V 25oC Collector Current @ TC = Collector Current @ TC = 100oC ICM (1) Pulsed Collector Current @ TC = 25oC 30 A IF Diode Forward Current @ TC = 25oC 10 A Maximum Power Dissipation @ TC = 25oC 42 W Maximum Power Dissipation @ TC = 100oC 17 W IC PD 20 A 10 A TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 3.0 Units o C/W C/W C/W RθJC(Diode) Thermal Resistance, Junction to Case - 5.6 o RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 62.5 o Notes: 2: Mountde on 1” square PCB (FR4 or G-10 material) ©2012 Fairchild Semiconductor Corporation FGPF10N60UNDF Rev.C0 1 www.fairchildsemi.com FGPF10N60UNDF 600V, 10A Short Circuit Rated May 2012 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF10N60UNDF FGPF10N60UNDF TO-220F Tube 50ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250µA 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 uA IC = 10mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 5.5 6.8 8.5 V IC = 10A, VGE = 15V - 2 2.45 V IC = 10A, VGE = 15V, TC = 125oC - 2.3 - V - 517 pF - 65 pF - 20 pF - 8.0 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 6.3 ns td(off) Turn-Off Delay Time - 52.2 ns tf Fall Time - 19.1 Eon Turn-On Switching Loss - 0.15 mJ Eoff Turn-Off Switching Loss - 0.05 mJ Ets Total Switching Loss - 0.2 mJ td(on) Turn-On Delay Time - 8.1 ns tr Rise Time - 7.3 ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Tsc Short Circuit Withstand Time FGPF10N60UNDF Rev.C0 VCC = 400V, IC = 10A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 10A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 24.8 ns - 55.1 ns - 34.2 ns - 0.22 mJ - 0.08 mJ - 0.3 mJ 10 - - µs www.fairchildsemi.com FGPF10N60UNDF 600V, 10A Short Circuit Rated Package Marking and Ordering Information Symbol Qg Parameter TC = 25°C unless otherwise noted Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 10A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Typ. - 37 Max Units nC - 5 nC - 21 nC Min. Typ. Max - 1.8 2.2 - 1.7 TC = 25°C unless otherwise noted Test Conditions TC = IF = 10A 25oC TC = 125oC IF = 10A, dIF/dt = 200A/µs FGPF10N60UNDF Rev.C0 Min. 3 TC = 25oC - 37.7 TC = 125oC - 78.9 TC = 25oC - 75 TC = 125oC - 221 Units V ns nC www.fairchildsemi.com FGPF10N60UNDF 600V, 10A Short Circuit Rated Electrical Characteristics of the IGBT FGPF10N60UNDF 600V, 10A Short Circuit Rated TTypical Performance Characteristics Figure 1. Typical Output Characteristics 80 80 o TC = 25 C 70 20V 17V 60 50 40 VGE = 12V 30 20 17V 15V 60 50 40 VGE = 12V 30 20 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 60 60 Common Emitter VGE = 15V 50 o TC = 125 C 40 Common Emitter VCE = 20V 50 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 20V 70 10 30 20 10 o TC = 25 C o TC = 125 C 40 30 20 10 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 3.5 3 6 9 12 Gate-Emitter Voltage,VGE [V] 20A 3.0 2.5 15 Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] o TC = 125 C 15V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 10A 2.0 IC = 5A 1.5 Common Emitter o TC = 25 C 16 12 8 10A 4 20A IC = 5A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF10N60UNDF Rev.C0 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 3000 Common Emitter o TC = 125 C 12 8 10A Coes Cres 100 Common Emitter VGE = 0V, f = 1MHz 20A 4 IC = 5A 0 4 o TC = 25 C 8 12 16 Gate-Emitter Voltage, VGE [V] 10 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 15 100 200V 12 VCC = 100V 10µs Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] Cies 1000 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Capacitance Characteristics 400V 9 6 3 10 100µs 1ms 1 10 ms *Notes: 0.1 o o 2. TJ = 150 C 3. Single Pulse TC = 25 C 0 0 5 10 15 20 25 30 35 Gate Charge, Qg [nC] 40 45 DC o 1. TC = 25 C Common Emitter 0.01 50 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 50 Common Emitter VCC = 400V, VGE = 15V IC = 10A tr 10 Switching Time [ns] Switching Time [ns] o td(on) Common Emitter VCC = 400V, VGE = 15V IC = 10A TC = 25 C o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 1 0 10 20 30 40 Gate Resistance, RG [Ω ] FGPF10N60UNDF Rev.C0 50 0 60 10 20 30 40 50 60 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGPF10N60UNDF 600V, 10A Short Circuit Rated Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 30 300 Common Emitter VGE = 15V, RG = 10Ω o 10 td(on) Common Emitter VGE = 15V, RG = 10Ω tr 100 Switching Time [ns] Switching Time [ns] TC = 25 C o o TC = 125 C td(off) tf TC = 25 C 10 o TC = 125 C 1 0 5 10 15 20 5 25 0 5 Collector Current, IC [A] 10 15 20 25 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 1000 Eon 100 Switching Loss [uJ] Switching Loss [µJ] Eon Eoff Common Emitter VCC = 400V, VGE = 15V IC = 10A Eoff 100 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C 10 o TC = 25 C o TC = 125 C o TC = 125 C 5 0 10 20 30 40 Gate Resistance, RG [Ω] 50 10 60 0 5 10 15 20 25 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 30 Forward Current, IF [A] Collector Current, IC [A] 50 10 10 o TJ = 125 C o TJ = 75 C o TJ = 25 C Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 1 1000 0 Collector-Emitter Voltage, VCE [V] FGPF10N60UNDF Rev.C0 6 1 2 Forward Voltage, VF [V] 3 www.fairchildsemi.com FGPF10N60UNDF 600V, 10A Short Circuit Rated Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 100 0.3 o TC = 25 C o Stored Recovery charge, Qrr [ns] TJ = 125 C Reverse Current , IR [µA] 10 o 1 TJ = 75 C 0.1 o TJ = 25 C 0.01 1E-3 50 200 400 Reverse Voltage, VR [V] o TC = 125 C 200A/µs 0.2 di/dt = 100A/µs 0.1 200A/µs di/dt = 100A/µs 0.0 600 0 2 4 6 8 10 12 Forward Current, IF [A] Figure 21. Reverse Recovery Time 100 Stored Recovery Charge, trr [nC] o TC = 25 C di/dt = 100A/µs o TC = 125 C 80 200A/µs 60 di/dt = 100A/µs 40 200A/µs 20 0 0 2 4 6 8 10 12 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] Thermal Response [Zthjc] 1 5 0.5 0.5 1 0.20.2 0.10.10.1 0.05 0.05 PDM 0.1 0.02 0.02 0.01 1E-5 0.005 -5 10 1E-4 -4 10 t1 PDM 0.01 0.01 single pulse 0.01 single pulse 1E-3 0.01 t2 Duty Factor, t1 D = t1/t2 t2 x Zthjc + T Peak Tj = Pdm C Duty Factor, D = t1/t2 Peak T = Pdm x Zthjc + T 0.1 1 j C 10 Rectangular Pulse Duration -1[sec] -3 -2 10 10 10 0 10 1 10 Rectangular Pulse Duration [sec] FGPF10N60UNDF Rev.C0 7 www.fairchildsemi.com FGPF10N60UNDF 600V, 10A Short Circuit Rated Typical Performance Characteristics FGPF10N60UNDF 600V, 10A Short Circuit Rated Mechanical Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2700V FGPF10N60UNDF Rev.C0 8 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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