KST4403 KST4403 Switching Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCEO VEBO Collector-Emitter Voltage -40 V Emitter-Base Voltage -5 IC V Collector Current -600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -0.1mA, IE=0 Min. -40 BVCEO * Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -40 BVEBO Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 IBEV Base Cut-off Current VCE= -35V, VBE= -0.4V ICEX Collector Cut-off Current VCE= -35V, VBE= -0.4V hFE DC Current Gain VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1.0mA VCE= -1V, IC= -10mA *VCE= -2V, IC= -150mA *VCE= -2V, IC= -500mA 30 60 100 100 20 Max. Units V V V -0.1 µA -0.1 µA 300 -0.4 -0.75 V V -0.95 -1.3 V V VCE (sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA VBE (sat) * Base-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -0.75 fT Current Gain Bandwidth Product IC= -20mA, VCE= -10V f=100MHz 200 Cob Output Capacitance VCB= -10V, IE=0 f=140KHz 8.5 pF tON Turn On Time VCC= -30V, VBE= -2V IC= -150mA, IB1= -15mA 35 ns tOFF Turn Off Time VCC= -30V, IC= -150mA IB1=IB2= -15mA 255 ns MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 2T ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST4403 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics hFE, DC CURRENT GAIN 1000 VCE = -2V 100 10 -1 -10 -100 -10 IC = 10 IB -1 V BE(sat) -0.1 V CE(sat) -0.01 -1 -1000 IC[mA], COLLECTOR CURRENT -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 f = 140KHz IE = 0 VCE = -10V COb[pF], CAPACITANCE IC[mA], COLLECTOR CURRENT -100 -10 -1 -0.0 1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE[V], BASE-EMITTER VOLTAGE -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 Figure 4. Collector-Base Capacitance 1000 VCE = -10V 100 10 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST4403 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1