FAIRCHILD FDZ298N

FDZ298N
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Features
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ298N minimizes both PCB space
and RDS(ON).
This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
• 6 A, 20 V
RDS(ON) = 27 mΩ @ VGS = 4.5 V
RDS(ON) = 39 mΩ @ VGS = 2.5 V
• Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Applications
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Battery management
• Battery protection
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability.
D
D
S
S
S
G
S
S
P in 1
G
Top
Bottom
Absolute Maximum Ratings
Symbol
D
C
D
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
6
A
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
1.7
W
–55 to +150
°C
72
°C/W
– Continuous
– Pulsed
10
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
C
FDZ298N
7”
8mm
3000 units
2004 Fairchild Semiconductor Corporation
FDZ298N Rev B1 (W)
FDZ298N
February 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA,Referenced to 25°C
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage.
VGS = ±12 V,
VDS = 0 V
±100
nA
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
1.5
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA,Referenced to 25°C
V
mV/°C
27
39
42
mΩ
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 6 A
24
S
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
680
pF
165
pF
90
pF
1.9
Ω
BVDSS
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA
VGS = 0 V,
20
V
mV/°C
12
(Note 2)
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 4.5 V,
0.6
0.9
–0.3
ID = 6 A,
ID = 5A,
ID = 6 A, TJ=125°C
23
28
28
10
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
8
16
ns
7
14
td(off)
ns
Turn–Off Delay Time
14
26
ns
tf
Turn–Off Fall Time
6
12
ns
Qg
Total Gate Charge
7
10
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 10V,
VGS = 4.5 V
ID = 6 A,
1.4
nC
1.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 6 A,
diF/dt = 100 A/µs
IS = 1.4 A
0.7
(Note 2)
1.4
A
1.2
V
14
3
nS
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user'
s board design.
a)
2.
72°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
157°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ298N Rev B1 (W)
FDZ298N
Electrical Characteristics
FDZ298N
Typical Characteristics
2.25
VGS=4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
10
2.0V
8
3.5V
2.5V
6
4
2
1.5V
VGS = 2.0V
2
1.75
1.5
2.5V
1.25
3.0V
3.5V
1
0
0.25
0.5
0.75
1
1.25
0
1.5
2
4
6
8
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.075
1.6
ID = 6.0A
VGS = 10V
1.4
ID =3.0A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.75
0
1.2
1
0.8
0.6
0.065
0.055
0.045
o
TA = 125 C
0.035
0.025
o
TA = 25 C
0.015
-50
-25
0
25
50
75
100
125
150
0
2
4
o
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
I D, DRAIN CURRENT (A)
4.0V
8
6
o
TA = 125 C
4
o
25 C
2
o
-55 C
0
VGS = 0V
10
1
o
TA = 125 C
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ298N Rev B1 (W)
FDZ298N
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
10
960
ID = 6.0A
f = 1MHz
VGS = 0 V
8
6
CAPACITANCE (pF)
VDS = 5V
10V
15V
4
640
Ciss
320
Coss
2
Crss
0
0
0
3
6
9
12
0
15
5
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
1ms
10
10ms
100ms
1s
DC
VGS = 4.5V
SINGLE PULSE
0.1
o
RθJA = 157 C/W
o
TA = 25 C
20
50
SINGLE PULSE
RθJA = 157°C/W
TA = 25°C
40
30
20
10
0
0.01
0.01
0.1
1
10
0.01
100
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
I D, DRAIN CURRENT (A)
RDS(ON) LIMIT
10s
15
Figure 8. Capacitance Characteristics.
100
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 157 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
t2
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ298N Rev B1 (W)
FDZ298N
Dimensional Outline and Pad Layout
FDZ298N Rev B1 (W)
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7