FDZ298N N-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). • 6 A, 20 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB Applications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery management • Battery protection • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability. D D S S S G S S P in 1 G Top Bottom Absolute Maximum Ratings Symbol D C D S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 6 A PD TJ, TSTG Power Dissipation for Single Operation (Note 1a) 1.7 W –55 to +150 °C 72 °C/W – Continuous – Pulsed 10 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity C FDZ298N 7” 8mm 3000 units 2004 Fairchild Semiconductor Corporation FDZ298N Rev B1 (W) FDZ298N February 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage. VGS = ±12 V, VDS = 0 V ±100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.5 Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA,Referenced to 25°C V mV/°C 27 39 42 mΩ ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 6 A 24 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 680 pF 165 pF 90 pF 1.9 Ω BVDSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = 250 µA VGS = 0 V, 20 V mV/°C 12 (Note 2) VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, 0.6 0.9 –0.3 ID = 6 A, ID = 5A, ID = 6 A, TJ=125°C 23 28 28 10 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 15 mV, f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 8 16 ns 7 14 td(off) ns Turn–Off Delay Time 14 26 ns tf Turn–Off Fall Time 6 12 ns Qg Total Gate Charge 7 10 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω VDS = 10V, VGS = 4.5 V ID = 6 A, 1.4 nC 1.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, trr Qrr Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = 6 A, diF/dt = 100 A/µs IS = 1.4 A 0.7 (Note 2) 1.4 A 1.2 V 14 3 nS nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 2. 72°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ298N Rev B1 (W) FDZ298N Electrical Characteristics FDZ298N Typical Characteristics 2.25 VGS=4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 2.0V 8 3.5V 2.5V 6 4 2 1.5V VGS = 2.0V 2 1.75 1.5 2.5V 1.25 3.0V 3.5V 1 0 0.25 0.5 0.75 1 1.25 0 1.5 2 4 6 8 10 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.075 1.6 ID = 6.0A VGS = 10V 1.4 ID =3.0A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.75 0 1.2 1 0.8 0.6 0.065 0.055 0.045 o TA = 125 C 0.035 0.025 o TA = 25 C 0.015 -50 -25 0 25 50 75 100 125 150 0 2 4 o 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 10 IS, REVERSE DRAIN CURRENT (A) VDS = 5V I D, DRAIN CURRENT (A) 4.0V 8 6 o TA = 125 C 4 o 25 C 2 o -55 C 0 VGS = 0V 10 1 o TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ298N Rev B1 (W) FDZ298N Typical Characteristics VGS, GATE-SOURCE VOLTAGE (V) 10 960 ID = 6.0A f = 1MHz VGS = 0 V 8 6 CAPACITANCE (pF) VDS = 5V 10V 15V 4 640 Ciss 320 Coss 2 Crss 0 0 0 3 6 9 12 0 15 5 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) 1ms 10 10ms 100ms 1s DC VGS = 4.5V SINGLE PULSE 0.1 o RθJA = 157 C/W o TA = 25 C 20 50 SINGLE PULSE RθJA = 157°C/W TA = 25°C 40 30 20 10 0 0.01 0.01 0.1 1 10 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D, DRAIN CURRENT (A) RDS(ON) LIMIT 10s 15 Figure 8. Capacitance Characteristics. 100 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 157 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 t2 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ298N Rev B1 (W) FDZ298N Dimensional Outline and Pad Layout FDZ298N Rev B1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7