tm FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V • Low Gate Charge • High performance trench technology for extremely These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions. low RDS(ON) • SuperSOT TM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –5.8 A PD Maximum Power Dissipation – Continuous (Note 1a) – Pulsed TJ, TSTG –20 (Note 1a) 1.6 (Note 1b) 0.8 W –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .608Z FDC608PZ 7’’ 8mm 3000 units ©2006 Fairchild Semiconductor Corporation FDC608PZ Rev B (W) FDC608PZ June 2006 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –10 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±10 µA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 3 26 38 35 ID(on) On–State Drain Current VGS = –4.5V, ID = –5.8 A ID = –5.0 A VGS = –2.5V, VGS = –4.5V,ID = –5.8A,TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –10 V, ID = –5.8 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.4 –1.0 –1.5 V mV/°C 30 43 –20 mΩ A 22 S 1330 pF 270 pF 230 12 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss RG Reverse Transfer Capacitance Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VGS = 15 mV, f = 1.0 MHz Ω (Note 2) VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 13 24 ns 8 16 ns td(off) Turn–Off Delay Time 91 145 ns tf Turn–Off Fall Time 60 96 ns Qg Total Gate Charge 17 23 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –5.8 A, 3 nC 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time IF = –5.8 A, diF/dt = 100A/µs 40 60 ns Qrr Diode Reverse Recovery Charge IF = –5.8 A, diF/dt = 100A/µs 15 23 nC VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 2 78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC608PZ Rev B (W) FDC608PZ Electrical Characteristics FDC608PZ Typical Characteristics 20 2.6 VGS = -4.5V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V -3.0V 15 10 -2.0V 5 0 0.5 1 1.5 2 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -2.5V 1.4 -3.0V -3.5V 1 0 3 Figure 1. On-Region Characteristics. -4.0V -4.5V 5 10 -ID, DRAIN CURRENT (A) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 0.1 ID = -5.8A VGS = -4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 0.6 0 1.3 1.1 0.9 0.7 ID = -2.9A 0.08 0.06 o TA = 125 C 0.04 TA = 25oC 0.02 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 -IS, REVERSE DRAIN CURRENT (A) 100 VDS = -5V -ID, DRAIN CURRENT (A) VGS= -2.0V 2.2 15 10 o TA = -55 C o 125 C 5 25oC VGS = 0V 10 1 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.0001 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC608PZ Rev B (W) FDC608PZ Typical Characteristics 2500 ID = -5.8A VDS = -5V f = 1 MHz VGS = 0 V -15V 8 2000 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -10V 6 4 Ciss 1500 1000 Coss 2 500 0 0 Crss 0 10 20 Qg, GATE CHARGE (nC) 30 0 40 Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance Characteristics. 100 100µs 10 1ms 10ms 100ms 1s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 156oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 4 6 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 RθJA = 156 C/W 0.1 o 0.1 P(pk) 0.05 t1 0.02 0.01 0.001 0.00001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC608PZ Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20