2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET 2SJ455 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount applications. • Small size of 2SJ455-applied equipment. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg Unit --250 PW≤10μs, duty cycle≤1% Tc=25°C V ±30 V --7 A --28 A 45 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V IG=±100μA, VDS=0V Drain-to-Source Breakdown Voltage V(BR)DSS Gate-to-Source Breakdown Voltage V(BR)GSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=--250V, VGS=0V VGS=±25V, VDS=0V Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA Ratings min typ max --250 V V ±30 --2.0 Unit --1.0 mA ±10 μA --3.0 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22410QA TK IM TA-2539 No. 5441-1/3 2SJ455 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on) VDS=--10V, ID=--4A ID=--4A, VGS=--10V Input Capacitance Ciss VDS=--20V, f=1MHz 1290 pF Output Capacitance Coss VDS=--20V, f=1MHz 330 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 155 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 22 ns See specified Test Circuit. 90 ns See specified Test Circuit. 300 ns Fall Time td(off) tf See specified Test Circuit. 95 Diode Forward Voltage VSD IS=--7A, VGS=0V --1.0 Diode Reverse Recovery Time trr IS=--7A, di / dt=100A / μs 160 Rise Time Turn-OFF Delay Time Package Dimensions 3.6 Unit max 6.0 S 0.6 0.85 Ω ns --1.5 V ns Switching Time Test Circuit unit : mm (typ) 7002-001 0V --10V 0.6 1 2 5.08 2SJ455 1 : Gate 2 : Source 3 : Drain 7.8 6.2 5.2 VOUT G 0.3 0.6 1.0 2.54 2.5 10.0 6.0 D PW=10μs D.C. ≤1% 0.7 1.2 4.2 1.0 2.54 ID= --4.0A RL=25.0Ω VIN 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 VDD= --100V VIN P.G 50Ω S SANYO : ZP 3 ASO 10 Drain Current, ID -- A 2 10 --10 7 5 1m s 10 10 2 Operation in this area is limited by RDS(on). --1.0 7 5 μs 0μ s ID= --7A 3 DC ms 0m s op er ati on 3 2 Tc=25°C Single pulse --0.1 --1.0 2 3 5 7 --10 2 3 PD -- Tc 50 IDP= --28A Allowable Power Dissipation, PD -- W 5 5 7 --100 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15289 45 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15290 No. 5441-2/3 2SJ455 Note on usage : Since the 2SJ455 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. 5441-3/3