SANYO 2SJ455

2SJ455
Ordering number : EN5441
SANYO Semiconductors
DATA SHEET
2SJ455
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-state resistance.
High-speed switching.
Surface mount type device making the following possible.
• Reduction in the number of manufacturing processes for 2SJ455-applied equipment.
• High density surface mount applications.
• Small size of 2SJ455-applied equipment.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
Conditions
Ratings
VDSS
VGSS
ID
IDP
Channel Temperature
PD
Tch
Storage Temperature
Tstg
Unit
--250
PW≤10μs, duty cycle≤1%
Tc=25°C
V
±30
V
--7
A
--28
A
45
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
IG=±100μA, VDS=0V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Gate-to-Source Breakdown Voltage
V(BR)GSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VDS=--250V, VGS=0V
VGS=±25V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
Ratings
min
typ
max
--250
V
V
±30
--2.0
Unit
--1.0
mA
±10
μA
--3.0
V
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
22410QA TK IM TA-2539 No. 5441-1/3
2SJ455
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
VDS=--10V, ID=--4A
ID=--4A, VGS=--10V
Input Capacitance
Ciss
VDS=--20V, f=1MHz
1290
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
330
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
155
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
22
ns
See specified Test Circuit.
90
ns
See specified Test Circuit.
300
ns
Fall Time
td(off)
tf
See specified Test Circuit.
95
Diode Forward Voltage
VSD
IS=--7A, VGS=0V
--1.0
Diode Reverse Recovery Time
trr
IS=--7A, di / dt=100A / μs
160
Rise Time
Turn-OFF Delay Time
Package Dimensions
3.6
Unit
max
6.0
S
0.6
0.85
Ω
ns
--1.5
V
ns
Switching Time Test Circuit
unit : mm (typ)
7002-001
0V
--10V
0.6
1
2
5.08
2SJ455
1 : Gate
2 : Source
3 : Drain
7.8
6.2
5.2
VOUT
G
0.3
0.6
1.0
2.54
2.5
10.0
6.0
D
PW=10μs
D.C. ≤1%
0.7
1.2
4.2
1.0
2.54
ID= --4.0A
RL=25.0Ω
VIN
8.4
10.0
0.4
0.2
8.2
7.8
6.2
3
VDD= --100V
VIN
P.G
50Ω
S
SANYO : ZP
3
ASO
10
Drain Current, ID -- A
2
10
--10
7
5
1m
s
10
10
2
Operation in
this area is
limited by RDS(on).
--1.0
7
5
μs
0μ
s
ID= --7A
3
DC
ms
0m
s
op
er
ati
on
3
2
Tc=25°C
Single pulse
--0.1
--1.0
2
3
5
7 --10
2
3
PD -- Tc
50
IDP= --28A
Allowable Power Dissipation, PD -- W
5
5
7 --100
Drain-to-Source Voltage, VDS -- V
2
3
5
IT15289
45
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15290
No. 5441-2/3
2SJ455
Note on usage : Since the 2SJ455 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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mentioned above.
This catalog provides information as of February, 2010. Specifications and information herein are subject
to change without notice.
PS No. 5441-3/3