FTD2017M Ordering number : ENA1176 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017M General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit 20 V ±12 V 6 A ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 40 A Allowable Power Dissipation PD When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit 1.2 W Total Dissipation PT Tch When mounted on ceramic substrate (1000mm 2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.25 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : D2017M Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V Ratings min typ 20 V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A Unit max ±10 μA μA 1.3 V 1 0.5 5 8.5 S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71608PA TI IM TC-00001413 No. A1176-1/4 FTD2017M Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance min 13 17 23 mΩ 18 24 mΩ RDS(on)3 RDS(on)4 ID=3A, VGS=3.1V ID=3A, VGS=2.5V 15 19 30 mΩ 15.4 20 33 mΩ Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs See specified Test Circuit. 930 ns See specified Test Circuit. 1460 ns See specified Test Circuit. 6400 ns See specified Test Circuit. 3040 ns Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A Diode Forward Voltage VSD IS=6A, VGS=0V Package Dimensions 8 7 6 0.05 6.4 4.5 1.0 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain SANYO : TSSOP8 0.25 0.95 nC 2.5 0.8 nC 1.2 V 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain 0.5 4 nC 2 5 0.125 1 10 Electrical Connection unit : mm (typ) 7006A-005 5 Unit 14 Rise Time 8 max ID=6A, VGS=4.5V ID=6A, VGS=4V td(on) tr 3.0 typ RDS(on)1 RDS(on)2 Turn-ON Delay Time 0.95 Ratings Conditions 0.425 0.65 Top view 1 2 3 4 Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=5A RL=2Ω VIN D VOUT PW=10μs D.C.≤1% G P.G Rg FTD2017M 50Ω S Rg=2.4kΩ No. A1176-2/4 FTD2017M ID -- VDS 4 .5 10.0 9 9 2 1 0 0.1 0.2 0.3 0.4 0 0.5 Drain-to-Source Voltage, VDS -- V 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT13596 RDS(on) -- Tc 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 30 25 20 15 10 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A 7 Ta= 5 °C --25 75°C 3 2 1.0 7 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 IT13599 ID=6A 10 Operation in this area is limited by RDS(on). 10 ms 0m s op era tio n Ta=25°C Single pulse When mounted on ceramic substrate (1000mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 =2 V GS 20 15 = VGS =6.0 V, I D 0 . 4 = VGS 10 --40 --20 0 20 A 40 60 80 100 120 140 160 IT13860 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V Allowable Power Dissipation, PD -- W PW≤10μs 10 0μ s 1m s 0A =6. I D , 4.5V 0A =3. I D , .5V 1.0 1.1 IT13600 PD -- Ta 1.6 IDP=40A 1.0 7 5 3 2 25 0.001 0.2 ASO DC =3 S VG 10 7 5 3 2 2 C 25° .0A Ambient Temperature, Ta -- °C VDS=10V 10 30 IT13859 ⏐yfs⏐ -- ID 3 =3 , ID V 1 . 5 --60 5 0 35 --25°C 6A Ta= 75°C ID=3A 25°C 35 0.1 7 5 3 2 0.5 IT13809 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3 1 0 Forward Transfer Admittance, ⏐yfs⏐ -- S 4 2 0 Drain Current, ID -- A 5 25°C 3 6 °C 4 7 --25°C VGS=1.5V 5 8 Ta=7 5 6 Drain Current, ID -- A Drain Current, ID -- A 7 10 7 5 3 2 VDS=10V 10 8 100 7 5 3 2 ID -- VGS 11 V 4.0 V 3.1 V 2.5 V V 10 When mounted on ceramic substrate (1000mm2✕0.8mm) 1.4 1.25 1.2 1.0 To tal 0.8 1u dis nit 0.6 sip ati on 0.4 0.2 0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13687 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13688 No. A1176-3/4 FTD2017M Note on usage : Since the FTD2017M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1176-4/4