TIG058E8 Ordering number : ENA1381 SANYO Semiconductors DATA SHEET TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Symbol Conditions Ratings VCES VGES Unit 400 V ±6 V ±8 V VGES ICP PW≤1ms CM=150μF, VGE=4V 150 A VCE≤320V, starting Tch=25°C 400 V / μs Channel Temperature dVCE / dt Tch Storage Temperature Tstg Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt 150 °C -40 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Ratings min typ max 400 Unit V 10 μA ±10 μA Marking : ZB Continued on next page. * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D1008PJ MS IM TC-00001783 No. A1381-1/5 TIG058E8 Continued from preceding page. Parameter Symbol Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max VGE(off) VCE(sat) VCE=10V, IC=1mA Collector-to-Emitter Saturation Voltage IC=100A, VGE=4V 4.0 Input Capacitance Cies 2200 pF 32 pF 24 pF Output Capacitance Coes VCE=10V, f=1MHz VCE=10V, f=1MHz Reverse Transfer Capacitance Cres VCE=10V, f=1MHz Package Dimensions 0.4 0.9 8 7 6 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.25 2.9 0.15 5 2.3 0 t o 0.02 2.8 V 5 Top View 1 2 3 4 Top view 4 1 0.65 0.3 0.9 0.25 V Electrical Connection unit : mm (typ) 7011A-004 8 5.6 0.07 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 Bot t om View Fig.1 Large Current R Load Screening Circuit RL CM + VCC RG 4V 0V TIG058E8 100kΩ Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 230Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. No. A1381-2/5 TIG058E8 IC -- VCE Tc=25°C Collector Current, IC -- A 180 V =5.0 VGE 4.0V 160 3.0V 120 2.5V 100 80 60 40 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V VCE -- VGE 120 100 80 60 40 Collector-to-Emitter Voltage, VCE -- V 9 8 7 6 IC=150A 5 130A 4 100A 3 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V IT14283 VCE -- VGE 1.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 Tc=25°C 9 8 IC =150A 7 6 130A 5 100A 4 3 1 5 6 Gate-to-Emitter Voltage, VGE -- V 2 3 IT14284 4 VCE(sat) -- Tc 12 VGE=4V 11 10 8 7 IC =15 0A 6 130A 5 100A 4 3 5.0 IT14282 10 2 Tc=75°C 9 4.5 VCE -- VGE 11 10 1 0 Gate-to-Emitter Voltage, VGE -- V 10 9 15 I C= 8 0A 7 130A 6 5 100A 4 3 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V IT14285 VGE(off) -- Tc 0.8 2 --50 --25 0 25 3 0.7 2 0.6 1000 7 5 0.4 0.3 0.2 0 --50 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT14287 150 IT14286 f=1MHz 3 2 100 7 5 Coes Cres 2 --25 125 Cies 3 0.1 100 75 Cies, Coes, Cres -- VCE 5 0.5 50 Case Temperature, Tc -- °C Cies, Coes, Cres -- pF Collector-to-Emitter Voltage, VCE -- V 5°C --2 25°C 75°C 140 IT14281 Tc= --25°C 11 Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 160 0 10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 11 2 Tc= 20 20 2 VCE=10V 180 140 0 IC -- VGE 200 Collector Current, IC -- A 200 10 7 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT14288 No. A1381-3/5 TIG058E8 SW Time -- ICP 7 3 2 1000 7 5 tr 3 2 td(on) 3 5 7 2 100 1000 7 5 tr 3 2 n) t d(o 100 7 Fig.1 Switching test circuit VGE=4V VCC=320V RL=2Ω CM=150μF PW=50μs 1200 1000 800 600 400 200 0 0 50 100 150 200 250 Gate Series Resistance, RG -- Ω CM -- ICP 450 2 3 5 300 IT14291 7 2 100 3 5 7 1000 IT14290 Gate Series Resistance, RG -- Ω IT14289 dv / dt -- RG 1400 Turn OFF, dv / dt -- V / μs 2 3 3 180 Collector Current (Pulse), ICP -- A 2 Collector Current (Pulse), ICP -- A 160 ICP -- VGE VCE=320V CM=150μF Tc=25°C 140 Tc=70°C 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 Gate-to-Emitter Voltage, VGE -- V 8 IT14292 VGE=5V VCE=320V CM=150μF Tc≤70°C 400 Maximum Capacitor, CM -- μF 3 5 100 7 Fig.1 Switching test circuit VGE=4V VCC=320V RL=2Ω ff) CM=150μF t d(o PW=50μs tf 5 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 5 SW Time -- RG 7 Fig.1 Switching test circuit VGE=4V tf VCC=320V RG=270Ω td (off) CM=150μF PW=50μs 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 Collector Current (Pulse), ICP -- A 140 160 IT14293 No. A1381-4/5 TIG058E8 Note : TIG058E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1381-5/5