SEMiX252GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 246 A Tc = 80 °C 175 A 150 A ICnom ICRM SEMiX®2s tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 288 A Tc = 80 °C 195 A 150 A VGES VCC = 1000 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1700 V Tj Inverse diode SEMiX252GB176HDs IF Preliminary Data Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1200 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 2 2.45 V Tj = 125 °C 2.45 2.9 V V IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 1 1.2 Tj = 125 °C 0.9 1.1 V Tj = 25 °C 6.7 8.3 mΩ 10.3 12.0 mΩ 5.8 6.4 V 0.1 0.3 mA Tj = 125 °C 5.2 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 13.3 nF f = 1 MHz 0.55 nF f = 1 MHz 0.44 nF QG VGE = - 8 V...+ 15 V 1400 nC RGint Tj = 25 °C 4.25 Ω td(on) VCC = 1200 V IC = 150 A Tj = 125 °C RG on = 9 Ω RG off = 9 Ω 265 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT Rth(j-s) per IGBT 55 ns 90 mJ 875 ns 125 ns 55 mJ 0.12 K/W K/W GB © by SEMIKRON Rev. 10 – 02.12.2008 1 SEMiX252GB176HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 SEMiX®2s rF min. typ. max. Unit Tj = 25 °C 1.6 1.8 V Tj = 125 °C 1.5 1.7 V V Tj = 25 °C 0.9 1.1 1.3 Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 3.0 3.0 3.0 mΩ 4.0 4.0 4.0 mΩ Rth(j-c) Tj = 125 °C IF = 150 A Tj = 125 °C di/dtoff = 3300 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 1200 V per diode SEMiX252GB176HDs Rth(j-s) per diode Preliminary Data Module IRRM Trench IGBT Modules Qrr Err • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) µC 32 mJ TC = 25 °C TC = 125 °C 18 nH 0.7 mΩ 1 mΩ 0.045 K/W 3 5 Nm 2.5 5 Nm Nm Typical Applications w • AC inverter drives • UPS • Electronic welders K/W K/W to terminals (M6) Mt A 55 0.19 LCE Features 205 250 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K GB 2 Rev. 10 – 02.12.2008 © by SEMIKRON SEMiX252GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 10 – 02.12.2008 3 SEMiX252GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 10 – 02.12.2008 © by SEMIKRON SEMiX252GB176HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 10 – 02.12.2008 5