SEMiX854GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 779 A Tc = 80°C 549 A 1200 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25°C 740 A Tc = 80°C 496 A ICRM = 2xICnom VGES SEMiX®4s Trench IGBT Modules tpsc Tj Inverse diode IF SEMiX854GB176HDs Preliminary Data VCC = 1000V VGE ≤ 20V Tj = 125°C VCES ≤ 1700V Tj = 150°C IFRM IFRM = 2xIFnom 1200 A IFSM tp = 10ms, half sine wave, Tj = 25°C 3800 A -40 ... 150 °C Tj Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Module Typical Applications Characteristics • AC inverter drives • UPS • Electronic welders Symbol It(RMS) Tstg Visol AC sinus 50Hz, t = 60s Conditions min. 600 A -40 ... 125 °C 4000 V typ. max. Unit Tj = 25°C 2 2.45 V Tj = 125°C 2.45 2.9 V V IGBT VCE(sat) Remarks ICnom = 600A VGE = 15V chiplevel VCE0 rCE VGE = 15V Tj = 25°C 1 1.2 Tj = 125°C 0.9 1.1 V Tj = 25°C 1.7 2.1 mΩ Tj = 125°C 2.6 3.0 mΩ VGE(th) VGE=VCE, IC = 24mA ICES VGE = 0V VCE = 1700V Cies Coes Cres VCE = 25V VGE = 0V Tj = 25°C 5.2 5.8 6.4 V 0.12 0.36 mA Tj = 125°C mA f = 1MHz 52.8 nF f = 1MHz 2.20 nF f = 1MHz 1.75 nF QG VGE = - 8 V...+ 15 V 5600 nC RGint Tj = 25°C 1.25 Ω td(on) VCC = 1200V ICnom = 600A Tj = 125°C RG on = 2Ω RG off = 2Ω 340 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT 80 ns 395 mJ 890 ns 155 ns 235 mJ 0.045 K/W GB © by SEMIKRON 03.04.2008 1 SEMiX854GB176HDs Characteristics Symbol Conditions Inverse diode VF = VEC IFnom = 600A VGE = 0V chiplevel VF0 rF SEMiX®4s IRRM Qrr Trench IGBT Modules Err Rth(j-c)D min. Tj = 25°C Tj = 125°C typ. max. Unit 1.7 1.9 V 1.7 1.9 V Tj = 25°C 0.9 1.1 1.3 V Tj = 125°C 0.7 0.9 1.1 V Tj = 25°C 1.0 1.0 1.0 mΩ 1.3 1.3 mΩ Tj = 125°C IFnom = 600A Tj = 125°C di/dtoff = 8000A/µs T = 125°C j VGE = -15V T j = 125°C VCC = 1200V per diode 1.3 730 A 220 µC 170 mJ 0.081 K/W Module SEMiX854GB176HDs Preliminary Data LCE RCC'+EE' res., terminal-chip 22 nH TC = 25°C 0.7 mΩ TC = 125°C 1 mΩ Features Rth(c-s) per module • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Ms to heat sink (M5) 3 0.03 5 K/W Nm Mt to terminals (M6) 2.5 5 Nm 400 g Typical Applications R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ • AC inverter drives • UPS • Electronic welders B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K w Temperature sensor Remarks GB 2 03.04.2008 © by SEMIKRON SEMiX854GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON 03.04.2008 3 SEMiX854GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 03.04.2008 © by SEMIKRON SEMiX854GB176HDs SEMiX 4s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON 03.04.2008 5