SEMIKRON SEMIX854GB176HDS

SEMiX854GB176HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
ICRM
Tj = 150°C
1700
V
Tc = 25°C
779
A
Tc = 80°C
549
A
1200
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tc = 25°C
740
A
Tc = 80°C
496
A
ICRM = 2xICnom
VGES
SEMiX®4s
Trench IGBT Modules
tpsc
Tj
Inverse diode
IF
SEMiX854GB176HDs
Preliminary Data
VCC = 1000V
VGE ≤ 20V
Tj = 125°C
VCES ≤ 1700V
Tj = 150°C
IFRM
IFRM = 2xIFnom
1200
A
IFSM
tp = 10ms, half sine wave, Tj = 25°C
3800
A
-40 ... 150
°C
Tj
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Module
Typical Applications
Characteristics
• AC inverter drives
• UPS
• Electronic welders
Symbol
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 60s
Conditions
min.
600
A
-40 ... 125
°C
4000
V
typ.
max.
Unit
Tj = 25°C
2
2.45
V
Tj = 125°C
2.45
2.9
V
V
IGBT
VCE(sat)
Remarks
ICnom = 600A
VGE = 15V
chiplevel
VCE0
rCE
VGE = 15V
Tj = 25°C
1
1.2
Tj = 125°C
0.9
1.1
V
Tj = 25°C
1.7
2.1
mΩ
Tj = 125°C
2.6
3.0
mΩ
VGE(th)
VGE=VCE, IC = 24mA
ICES
VGE = 0V
VCE = 1700V
Cies
Coes
Cres
VCE = 25V
VGE = 0V
Tj = 25°C
5.2
5.8
6.4
V
0.12
0.36
mA
Tj = 125°C
mA
f = 1MHz
52.8
nF
f = 1MHz
2.20
nF
f = 1MHz
1.75
nF
QG
VGE = - 8 V...+ 15 V
5600
nC
RGint
Tj = 25°C
1.25
Ω
td(on)
VCC = 1200V
ICnom = 600A
Tj = 125°C
RG on = 2Ω
RG off = 2Ω
340
ns
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
per IGBT
80
ns
395
mJ
890
ns
155
ns
235
mJ
0.045
K/W
GB
© by SEMIKRON
03.04.2008
1
SEMiX854GB176HDs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IFnom = 600A
VGE = 0V
chiplevel
VF0
rF
SEMiX®4s
IRRM
Qrr
Trench IGBT Modules
Err
Rth(j-c)D
min.
Tj = 25°C
Tj = 125°C
typ.
max.
Unit
1.7
1.9
V
1.7
1.9
V
Tj = 25°C
0.9
1.1
1.3
V
Tj = 125°C
0.7
0.9
1.1
V
Tj = 25°C
1.0
1.0
1.0
mΩ
1.3
1.3
mΩ
Tj = 125°C
IFnom = 600A
Tj = 125°C
di/dtoff = 8000A/µs T = 125°C
j
VGE = -15V
T
j = 125°C
VCC = 1200V
per diode
1.3
730
A
220
µC
170
mJ
0.081
K/W
Module
SEMiX854GB176HDs
Preliminary Data
LCE
RCC'+EE'
res., terminal-chip
22
nH
TC = 25°C
0.7
mΩ
TC = 125°C
1
mΩ
Features
Rth(c-s)
per module
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Ms
to heat sink (M5)
3
0.03
5
K/W
Nm
Mt
to terminals (M6)
2.5
5
Nm
400
g
Typical Applications
R100
Tc=100°C (R25=5 kΩ)
0,493
±5%
kΩ
• AC inverter drives
• UPS
• Electronic welders
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
K
w
Temperature sensor
Remarks
GB
2
03.04.2008
© by SEMIKRON
SEMiX854GB176HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
© by SEMIKRON
03.04.2008
3
SEMiX854GB176HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
03.04.2008
© by SEMIKRON
SEMiX854GB176HDs
SEMiX 4s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or
implied is made regarding delivery, performance or suitability.
© by SEMIKRON
03.04.2008
5